Light trapping effects in thin film silicon solar cells

We present advanced light trapping concepts for thin film silicon solar cells. When an amorphous and a microcrystalline absorber layers are combined into a micromorph tandem cell, light trapping becomes a challenge because it should combine the spectral region from 600 to 750 nm for the amorphous top cell and from 800 to 1100 for the microcrystalline bottom cell. Because light trapping is typically achieved by growing on textured substrates, the effect of interface textures on the material and electric properties has to be taken into account, and importantly, how the surface textures evolve with the thickness of the overgrowing layers. We present different scenarios for the n-i-p configuration on flexible polymer substrates and p-i-n cells on glass substrate, and we present our latest stabilized efficiencies of 9.8% and 11.1%, respectively

Microcrystalline silicon solar cells: effect of substrate temperature on cracks and their role in post-oxidation

Microcrystalline silicon (mc-Si:H) cells can reach efficiencies up to typically 10% and are usually incorporated in tandem micromorph devices. When cells are grown on rough substrates, ‘‘cracks’’ can appear in the mc-Si:H layers. Previous works have demonstrated that these cracks have mainly detrimental effects on the fill factor and open-circuit voltage, and act as bad diodes with a high reverse saturation current. In this paper, we clarify the nature of the cracks, their role in postoxidation processes, and indicate how their density can be reduced. Regular secondary ion mass spectrometry (SIMS) and local nano-SIMS measurements show that these cracks are prone to local post-oxidation and lead to apparent high oxygen content in the layer. Usually the number of cracks can be decreased with an appropriate modification of the substrate surface morphology, but then, the required light scattering effect is reduced due to a lower roughness. This study presents an alternative/complementary way to decrease the crack density by increasing the substrate temperature during deposition. These results, also obtained when performing numerical simulation of the growth process, are attributed to the enhanced surface diffusion of the adatoms at higher deposition temperature. We evaluate the cracks density by introducing a fast method to count cracks with good statistics over approximately 4000 mm of sample cross-section. This method is proven to be useful to quickly visualize the impact of substrate morphology on the density of cracks in microcrystalline and in micromorph devices, which is an important issue in the manufacturing process of modules. Copyright#2010 John Wiley & Sons, Ltd

High-efficiency micromorph silicon solar cells with in-situ intermediate reflector deposited on various rough LPCVD ZnO

Light management using intermediate reflector layers (IRL) and advanced front transparent conductive oxide (TCO) morphologies is needed to rise the short-circuit current density (Jsc) of micromorph tandem solar cells above 14 mA/cm2. For micromorph cells deposited on surface-textured ZnO layers grown by low-pressure chemical vapour deposition (LPCVD), we study the interplay between the front TCO layer and the IRL and its impact on fill factor and current matching conditions. The key role of the angular distribution of the light scattered by the front LPCVD ZnO layer is highlighted. A micromorph cell with 11.1% stabilized conversion efficiency is demonstrated. By increasing the bottom cell thickness and adding an antireflection coating, a Jsc value of 13.8 mA/cm2 is achieved. This remarkably high Jsc yields 13.3% initial conversion efficiency

Micromorph tandem solar cells grown at high rate with in-situ intermediate reflector in industrial KAI PECVD reactors

We report on the latest results of tandem micromorph (a-Si:H/μc-Si:H) silicon solar cells fabricated in commercial Oerlikon Solar KAI-S and KAI-M PECVD reactors. First developments of in-situ silicon oxide based intermediate reflector (SOIR) in KAI reactors are as well presented. Under low depletion conditions (silane concentration 1cm2, with a deposition rate of 0.55 nm/s for microcrystalline silicon and an ex-situ silicon oxide-based intermediate reflector (SOIR). Under high depletion conditions, the growth rate could be raised up to 1.2 nm/s, in a modified KAI-M reactor, and the highest initial efficiency reached so far is 9.7% with in-situ SOIR and top cell thickness of ∼ 230 nm. Promising micromorph solar cells are thus produced under conditions that are highly favorable to low-cost fabrication of tandem modules at an industrial level

LATEST DEVELOPMENTS ON MICROMORPH TANDEM CELLS AT IMT

The latest developments on micromorph tandem cells in small area laboratory and large area industrial PE-CVD systems are reviewed. We report on a 13.3% initial efficiency micromorph tandem cell deposited in our small area system. The development of an in-situ silicon oxide based intermediate reflector layer (SOIR) was essential in order to achieve such high efficiencies. We describe its detailed material structure and discuss optical management aspects for different cell configurations. In our large area industrial R&D reactor the highest efficiency so far obtained is a 11.0% initial efficiency micromorph tandem cell. We discuss in detail the role of pressure and silane depletion on the cell parameters of single junction microcrystalline cells and present efficiency trends decreasing from 8.2% to 7.0% with deposition rates increasing from 0.3 nm/s to 1.2 nm/s

Kinetics of isothermal and non-isothermal precipitation in an Al-6at%Si alloy

A novel theory which describes the progress of a thermally activated reaction under isothermal and linear heating conditions is presented. It incorporates nucleation, growth and impingement and takes account of temperaturedependent solubility. The model generally fits very well to isothermal calorimetry and differential scanning calorimetry data on precipitation in an Al-6 at.% Si alloy. Analysis of the data shows that two processes occur in this precipitation reaction: growth of large Si particles and growth of pre-existing small nuclei. Determination of the sizes of Si precipitates by transmission electron microscopy indicates that interfacial energy contributions are small and have a negligible influence on solubilit