Electrical Properties of High-k Oxide in Pd/Al2O3/InGaAs Stack

The paper presents the results of capacitance-voltage (C-V) characterization of metal-oxidesemiconductor (MOS) structure, namely Pd/Al2O3/ In0.53Ga0.47As/InP. It is shown that MOS structure under study exhibit both electron and hole trapping with permanent and temporary charge trapping contributions. The interfacial transition layer between the high-k oxide and InGaAs has the greatest influence on this charge trapping phenomenon. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3504

Golongan Senyawa Metabolit Sekunder dari Ramuan Tradisional NTT dalam Sopi Buah Pisang

Telah dilakukan penelitian tentang pengaruh berat buah pisang, volume starter dan waktu fermentasi pada pembuatan sopi buah pisang kepok (Mussa paradisiaca L), buah pisang rote dan buah pisang ambon ((Musa acuminata cavendish subgroup) asal Timor kemudian isolasi dan identifikasi golongan senyawa metabolit sekunder ramuan sopi asal kupang yang larut pada tahap fermentasi dan yang larut pada tahap maserasi dengan sopi hasil fermentasi pisang kepok (Musa paradisiaca l.). Penelitian ini bertujuan untuk mengetahui pengaruh berat buah, volume starter dan waktu fermentasi terhadap kadar alkohol yang dihasilkan dari buah pisang kapok (Mussa paradisiaca L), buah pisang Rote dan buah pisang Ambon ((Musa acuminata cavendish subgroup) asal Timor kemudian untuk mengetahui golongan metabolit sekunder ramuan sopi asal desa air mata kupang yang larut pada tahap fermentasi dan yang larut pada tahap maserasi dengan sopi hasil fermentasi pisang kepok (Musa paradisiaca l.) serta pada sopi masyarakat desa mata air Kupang. Variabel volume starter yang digunakan adalah 0, 50, 75 dan 100 mL, sedangkan variabel waku fermentasi yang digunakan adalah 2 hari, 4 hari, 6 hari, dan 8 hari.Uji statisik dilakukan menggunakan ANOVA kemudian dilanjutkan dengan Uji Duncan 5%. Hasil penelitian menunjukkan bahwa volume starter berpengaruh terhadap kadar alkohol buah pisang kepok (14,74%), pisang rote (17%) dan pisang ambon (8%) dihasilkan oleh volume starter 100 mL. Sedangkan waktu fermentasi berpengaruh terhadap kadar alkohol buah pisang kepok (12,83%), pisang rote (17%) dan pisang ambon (12%) dihasilkan oleh waktu fermentasi 6 hari. Hasil uji secara fitokimia Pada perlakuan fermentasi buah pisang kapok dengan menambahkan ramuan sopi dan juga sopi masyarakat yang perlakuannya sama yaitu pada tahap fermentasi berbahan nira dan gula dengan menambahkan ramuan sopi sama sama tidak mengandung metabolit sekunder. Sedangkan pada ramuan sopi desa mata air yang fermentasi  dimaserasi dalam sopi pisang kapok hasil fermentasi terisolasi dan teridentifikasi mengandung senyawa metabolit sekunder golongan flavonoid, tanin, saponin dan terpenoid kemudian dilanjutkan dengan identifikasi isolat menggunakan spektrofotometer UV-VIS diperoleh serapan pada panjang gelombang 380nm dengan absorbansi 0,847 dan 374nm dengan absorbansi 0,829 dengan demikian senyawa metabolit sekunder yang teridentifikasi yakni flavonoid golongan flavanol dan auron

Effect of low temperature RF plasma treatment on electrical properties of junctionless InGaAs MOSFETs

In this paper, we study the effect of low-temperature RF plasma treatment in forming gas (10%H2+90%N2) on the electrical characteristics of junctionless MOSFETs with n-In0.53Ga0.47As channel and an Al2O3 gate dielectric. The impact of plasma power density on the device parameters is investigated. It is found that RF plasma annealing with a low power density (0.5 W/cm2) at 150°C for 10 min provides substantial improvement of source/drain contacts resistance and the carrier mobility resulting in a considerable increase of the on-state current and transconductance. It also improves the subthreshold slope and reduces the fixed positive charge in Al2O3 under the gate, shifting the threshold voltage toward positive values. It is demonstrated that non-thermal factors play a principle role in modification of electrical properties of the JL MOSFETs under RF plasma treatment. Such treatment may be an efficient tool for the improvement of the performance of the advanced MOSFETs with III-V channel materials

Fabrication and characterization of InGaAs-on-insulator lateral N+/n/N+ structures

session posterInternational audienceLateral N+/n/N+ InGaAs-on-insulator structures are successfully fabricated by direct wafer bonding and selective regrowth. Electrical characterizations are performed for varying n-layer thickness from fully-depleted films up to the limit of partial depletion. Measurements under externally applied uniaxial tensile strain show an improved drive current

Volume and interface conduction in InGaAs junctionless transistors

session 7: Design, Characterization and PerformanceInternational audienceDoped InGaAs were characterized using a revisited pseudo-MOSFET configuration. Two different conduction mechanisms were evidenced: volume and interface. The impact of film thickness, channel width and length is evaluated. Measurements at low temperatures complete the analysis

Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanisms

International audienceBack-gated InGaAs-on-insulator lateral N+NN+ MOSFETs are successfully fabricated by direct wafer bonding and selective epitaxial regrowth. These devices were characterized using a revisited pseudo-MOSFET configuration. Two different transport mechanisms are evidenced: volume conduction in the undepleted region of the film and surface conduction at the interface between InGaAs and buried insulator. We propose extraction techniques for the volume mobility and interface mobility. The impact of film thickness, channel width, and length is evaluated. Additional measurements reveal the variation of the transistor parameters at low temperature and under externally applied uniaxial tensile strain. Previous article in issu

TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications

We provide the first report of the structural and electrical properties of TiN/ZrO2/Ti/Al metal-insulator-metal capacitor structures, where the ZrO2 thin film (7-8 nm) is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance-voltage (C-V) and current-voltage (I-V) characteristics are reported for premetallization rapid thermal annealing (RTP) in N-2 for 60 s at 400 degrees C, 500 degrees C, or 600 degrees C. For the RTP at 400 degrees C, we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of I V and low capacitance equivalent thickness values of similar to 0.9 nm at a gate voltage of 0 V. The dielectric constant of ZrO2 is 31 +/- 2 after RTP treatment at 400 degrees C