36 research outputs found
Measuring the Mermin-Peres magic square using an online quantum computer
We have implemented the six series of three commuting measurement of the
Mermin-Peres magic square on an online, five qubit, quantum computer. The magic
square tests if the measurements of the system can be described by physical
realism (in the EPR sense) and simultaneously are non-contextual. We find that
our measurement results violate any realistic and non-contextual model by
almost 28 standard deviations. We also find that although the quantum computer
we used for the measurements leaves much to be desired in producing accurate
and reproducible results, the simplicity, the ease of re-running the
measurement programs, and the user friendliness compensates for this fact.Comment: 7 pages, 2 figures, 5 table
Study of drinking water activity towards the formation organoferric complexes
The article considers one of the methods of the study of drinking water activity towards the formation of organoferric complexes that helps to solve the problem of asiderotic anemia
ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ΄Π΅Π»ΡΠ½ΠΎΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΎΡΡΠΈ ΠΊΠΎΡΠΎΡΠΊΠΎΠ·Π°ΠΌΠΊΠ½ΡΡΠΎΠΉ ΠΎΠ±ΠΌΠΎΡΠΊΠΈ ΡΠΎΡΠΎΡΠ° Π°ΡΠΈΠ½Ρ ΡΠΎΠ½Π½ΡΡ Π΄Π²ΠΈΠ³Π°ΡΠ΅Π»Π΅ΠΉ ΡΡΠ°ΡΠΈΡΡΠΈΡΠ΅ΡΠΊΠΈΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΏΠ»Π°Π½ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°
Π Π°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°Π΅ΡΡΡ Π²Π»ΠΈΡΠ½ΠΈΠ΅ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΡ ΠΈ Ρ
ΠΈΠΌΡΠΎΡΡΠ°Π²Π° Π°Π»ΡΠΌΠΈΠ½ΠΈΡ ΠΏΡΠΈ Π·Π°Π»ΠΈΠ²ΠΊΠ΅, Π΄Π»ΠΈΠ½Ρ ΠΏΠ°ΠΊΠ΅ΡΠΎΠ² ΠΈ ΡΡΠΌΠΌΠ°ΡΠ½ΠΎΠ³ΠΎ ΠΏΠΎΠΏΠ΅ΡΠ΅ΡΠ½ΠΎΠ³ΠΎ ΡΠ΅ΡΠ΅Π½ΠΈΡ ΠΏΠ°Π·ΠΎΠ² ΡΠΎΡΠΎΡΠΎΠ² Π½Π° ΡΠ΄Π΅Π»ΡΠ½ΡΡ ΡΠ»Π΅ΠΊΡΡΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΎΡΡΡ Π°Π»ΡΠΌΠΈΠ½ΠΈΡ ΠΊΠΎΡΠΎΡΠΊΠΎΠ·Π°ΠΌΠΊΠ½ΡΡΠΎΠΉ ΠΎΠ±ΠΌΠΎΡΠΊΠΈ ΡΠΎΡΠΎΡΠΎΠ² Π°ΡΠΈΠ½Ρ
ΡΠΎΠ½Π½ΡΡ
Π΄Π²ΠΈΠ³Π°ΡΠ΅Π»Π΅ΠΉ. Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΠΌΠ΅ΡΠΎΠ΄Π° ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ Π²ΡΠ±ΡΠ°Π½ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΠΎ-ΡΡΠ°ΡΠΈΡΡΠΈΡΠ΅ΡΠΊΠΈΠΉ. Π‘ΠΎΡΡΠ°Π²Π»Π΅Π½ ΡΠ΅Π½ΡΡΠ°Π»ΡΠ½ΡΠΉ ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡΠΈΠΎΠ½Π½ΡΠΉ ΡΠΎΡΠ°ΡΠ°Π±Π΅Π»ΡΠ½ΡΠΉ ΡΠ½ΠΈΡΠΎΡΠΌΠΏΠ»Π°Π½ Π²ΡΠΎΡΠΎΠ³ΠΎ ΠΏΠΎΡΡΠ΄ΠΊΠ°. ΠΠ»Ρ ΡΠ΅Π°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΠΏΠ»Π°Π½Π° ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½ΠΎ 116 ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΡ
ΡΠΎΡΠΎΡΠΎΠ² Π½Π° Π±Π°Π·Π΅ Π΄Π²ΠΈΠ³Π°ΡΠ΅Π»Π΅ΠΉ ΡΠ΅ΡΠΈΠΉ ΠΠ ΠΈ ΠΠ2. Π£Π΄Π΅Π»ΡΠ½Π°Ρ ΡΠ»Π΅ΠΊΡΡΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΎΡΡΡ ΠΈΠ·ΠΌΠ΅ΡΡΠ»Π°ΡΡ ΠΏΡΠΈΠ±ΠΎΡΠΎΠΌ ΡΠΈΠΏΠ° ΠΠ-1 Π½Π° Π²Π΅Π½ΡΠΈΠ»ΡΡΠΈΠΎΠ½Π½ΡΡ
ΠΊΡΡΠ»ΡΡΡ
, ΠΊΠΎΡΠΎΡΠΊΠΎΠ·Π°ΠΌΡΠΊΠ°ΡΡΠΈΡ
ΠΊΠΎΠ»ΡΡΠ°Ρ
ΠΈ Π½Π° ΠΈΠ·Π²Π»Π΅ΡΠ΅Π½Π½ΡΡ
ΠΈΠ· ΡΠΎΡΠΎΡΠΎΠ² ΡΡΠ΅ΡΠΆΠ½ΡΡ
ΠΎΠ±ΠΌΠΎΡΠΊΠΈ. ΠΡΠ΅Π³ΠΎ ΠΏΡΠΎΠΈΠ·Π²Π΅Π΄Π΅Π½ΠΎ 4292 Π·Π°ΠΌΠ΅ΡΠ°. Π ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠ΅ ΡΡΠ°ΡΠΈΡΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΡ
Π΄Π°Π½Π½ΡΡ
ΠΏΠΎΠ»ΡΡΠ΅Π½Ρ ΡΡΠ°Π²Π½Π΅Π½ΠΈΡ ΡΠ΅Π³ΡΠ΅ΡΡΠΈΠΈ Π² Π²ΠΈΠ΄Π΅ ΠΏΠΎΠ»ΠΈΠ½ΠΎΠΌΠΎΠ² Π²ΡΠΎΡΠΎΠ³ΠΎ ΠΏΠΎΡΡΠ΄ΠΊΠ° ΠΎΡΠ΄Π΅Π»ΡΠ½ΠΎ Π΄Π»Ρ ΠΊΠΎΡΠΎΡΠΊΠΎΠ·Π°ΠΌΡΠΊΠ°ΡΡΠΈΡ
ΠΊΠΎΠ»Π΅Ρ ΠΈ ΡΡΠ΅ΡΠΆΠ½Π΅ΠΉ ΠΎΠ±ΠΌΠΎΡΠΊΠΈ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½Π° ΠΏΡΠΎΠ²Π΅ΡΠΊΠ° ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΉ Π½Π° Π°Π΄Π΅ΠΊΠ²Π°ΡΠ½ΠΎΡΡΡ ΠΏΠΎ F-ΠΊΡΠΈΡΠ΅ΡΠΈΡ Π€ΠΈΡΠ΅ΡΠ° ΠΈ ΠΊΠΎΡΡΡΠΈΡΠΈΠ΅Π½ΡΠΎΠ² ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΉ Π½Π° Π·Π½Π°ΡΠΈΠΌΠΎΡΡΡ ΠΏΠΎ ΠΊΡΠΈΡΠ΅ΡΠΈΡ Π‘ΡΡΡΠ΄Π΅Π½ΡΠ°. Π£ΡΠ°Π²Π½Π΅Π½ΠΈΡ ΡΠ΅Π³ΡΠ΅ΡΡΠΈΠΈ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡ ΡΡΠ΅ΡΡΡ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΈ ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠ²Π½ΠΎ-ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΡΠ°ΠΊΡΠΎΡΡ ΠΏΡΠΈ ΠΏΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΠΈ Π°ΡΠΈΠ½Ρ
ΡΠΎΠ½Π½ΡΡ
Π΄Π²ΠΈΠ³Π°ΡΠ΅Π»Π΅ΠΉ, Π°Π½Π°Π»ΠΎΠ³ΠΈΡΠ½ΡΡ
ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Π½ΡΠΌ, ΠΈ ΠΏΠΎΠ²ΡΡΠΈΡΡ ΡΠΎΡΠ½ΠΎΡΡΡ ΡΠ°ΡΡΠ΅ΡΠ° ΠΈΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ
InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature
[No abstract available
ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠΎΡΠ±ΡΠΈΠΎΠ½Π½ΡΡ Ρ Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΡΠ³Π»Π΅ΡΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΎΡΡΠ°ΡΠΊΠ° ΠΏΠΈΡΠΎΠ»ΠΈΠ·Π° Π°Π²ΡΠΎΡΠΈΠ½
ΠΡΡΠ²Π»Π΅Π½ΠΈΠ΅ ΠΏΡΠΎΠ±Π»Π΅ΠΌΠ½ΠΎΠΉ ΡΠΈΡΡΠ°ΡΠΈΠΈ Π² ΠΏΠΎΠ²ΡΡΠ΅Π½ΠΈΠ΅ ΠΊΠ°ΡΠ΅ΡΡΠ²Π° ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ²Π° ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΠΎΠΉ ΠΏΡΠΎΠ΄ΡΠΊΡΠΈΠΈ
Π‘ΠΎΠ²Π΅ΡΡΠ΅Π½ΡΡΠ²ΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ΅Ρ Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ ΡΠΎΠΎΡΡΠΆΠ΅Π½ΠΈΡ ΠΏΠΎΠ΄Π²ΠΎΠ΄Π½ΡΡ ΠΏΠ΅ΡΠ΅Ρ ΠΎΠ΄ΠΎΠ² ΡΡΡΠ±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΠΎΠ² ΠΏΡΠΎΠ»ΠΎΠΆΠ΅Π½Π½ΡΡ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Π³ΠΎΡΠΈΠ·ΠΎΠ½ΡΠ°Π»ΡΠ½ΠΎ-Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½Π½ΠΎΠ³ΠΎ Π±ΡΡΠ΅Π½ΠΈΡ
Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡ β ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ° ΡΠ΅ΠΊΠΎΠΌΠ΅Π½Π΄Π°ΡΠΈΠΉ ΠΏΠΎ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΡ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ ΠΏΡΠΎΠΊΠ»Π°Π΄ΠΊΠΈ ΡΡΡΠ±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΠΎΠ² ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Π³ΠΎΡΠΈΠ·ΠΎΠ½ΡΠ°Π»ΡΠ½ΠΎ-Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½Π½ΠΎΠ³ΠΎ Π±ΡΡΠ΅Π½ΠΈΡ Ρ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ΠΌ Π·Π°ΡΠΈΡΠ½ΠΎΠ³ΠΎ ΡΡΡΡΠΎΠΉΡΡΠ²Π°.
Π ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΏΡΠΎΠ²ΠΎΠ΄ΠΈΠ»ΠΈΡΡ ΡΡΠ°Π²Π½ΠΈΡΠ΅Π»ΡΠ½Π°Ρ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ° ΡΡΡΠ΅ΡΡΠ²ΡΡΡΠΈΡ
ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ² Π±Π΅ΡΡΡΠ°Π½ΡΠ΅ΠΉΠ½ΠΎΠΉ ΠΏΡΠΎΠΊΠ»Π°Π΄ΠΊΠΈ ΡΡΡΠ±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΠΎΠ², ΡΠ°ΡΡΠ΅Ρ ΠΎΡΠ½ΠΎΠ²Π½ΡΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΠΏΠΎΠ΄Π²ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π°, ΠΏΠΎΠ΄Π±ΠΎΡ Π·Π°ΡΠΈΡΠ½ΠΎΠ³ΠΎ ΡΡΡΡΠΎΠΉΡΡΠ²Π°, ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ Π½Π°ΠΏΡΡΠΆΠ΅Π½Π½ΠΎ-Π΄Π΅ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ ΡΠΎΡΡΠΎΡΠ½ΠΈΡ ΡΡΡΠ±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π° Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΠΊΠΎΠ½Π΅ΡΠ½ΠΎ-ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ½ΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π² ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΠ½ΠΎΠΌ ΠΊΠΎΠΌΠΏΠ»Π΅ΠΊΡΠ΅ Ansys.
Π ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠ΅ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΏΠΎΠ΄ΠΎΠ±ΡΠ°Π½Ρ ΠΎΠΏΡΠΈΠΌΠ°Π»ΡΠ½ΡΠ΅ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΡ ΠΏΠΎΠ΄Π²ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π°, ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΊΠΎΠ½Π΅ΡΠ½ΠΎ-ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ½ΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π² ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΠ½ΠΎΠΌ ΠΊΠΎΠΌΠΏΠ»Π΅ΠΊΡΠ΅ Ansys ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΎ Π½Π°ΠΏΡΡΠΆΠ΅Π½Π½ΠΎ-Π΄Π΅ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ½ ΡΠΎΡΡΠΎΡΠ½ΠΈΠ΅ ΡΡΡΠ±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π° Ρ Π·Π°ΡΠΈΡΠ½ΡΠΌ ΡΡΡΡΠΎΠΉΡΡΠ²ΠΎΠΌ ΠΈ Π±Π΅Π· Π½Π΅Π³ΠΎ.The purpose of the work is to develop recommendations for the application of pipeline laying technology by the method of horizontal directional drilling using a protective device.
In the process of the research, the existing methods of trenchless pipeline laying, the calculation of the main characteristics of the underwater crossing, the selection of the protective device, the study of the stress-strain state of the pipeline using finite element modeling in the software complex Ansys were compared. As a result of the research, optimal parameters of the underwater transition were selected, the finite element method in the software complex Ansys determined the stress-strain state of the pipeline with the protective device and without it
ΠΠ»Π³ΠΎΡΠΈΡΠΌ Π²ΡΠ±ΠΎΡΠ° ΡΠΎΡΠΊΠΈ ΠΈΠ½ΡΠ΅ΡΠΊΠΎΠ½Π½Π΅ΠΊΡΠΈΠΈ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½Π½ΠΎΠΉ Π³Π΅Π½Π΅ΡΠ°ΡΠΈΠΈ ΠΈ Π΅Π΅ ΠΈΠ½ΡΠ΅Π³ΡΠ°ΡΠΈΡ Π² ΡΠ°Π±ΠΎΡΡ ΡΠ½Π΅ΡΠ³ΠΎΡΠΈΡΡΠ΅ΠΌΡ
Π ΡΡΠ°ΡΡΠ΅ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ Π°Π»Π³ΠΎΡΠΈΡΠΌ Π²ΡΠ±ΠΎΡΠ° ΡΠΎΡΠΊΠΈ ΠΈΠ½ΡΠ΅ΡΠΊΠΎΠ½Π½Π΅ΠΊΡΠΈΠΈ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½Π½ΠΎΠΉ Π³Π΅Π½Π΅ΡΠ°ΡΠΈΠΈ Ρ ΡΡΠ΅ΡΠΎΠΌ ΠΏΠΎΡΡΠ°Π²Π»Π΅Π½Π½ΡΡ
ΠΊΡΠΈΡΠ΅ΡΠΈΠ΅Π². Π Π°ΡΡΠΌΠΎΡΡΠ΅Π½Ρ ΠΎΡΠ½ΠΎΠ²Π½ΡΠ΅ ΡΠ°ΠΊΡΠΎΡΡ, Π²Π»ΠΈΡΡΡΠΈΠ΅ Π½Π° ΡΠ΅ΠΆΠΈΠΌΡ ΡΠ°Π±ΠΎΡΡ ΡΠ½Π΅ΡΠ³ΠΎΡΠΈΡΡΠ΅ΠΌΡ Π² Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΠΈ ΠΎΡ ΡΠΎΡΠΊΠΈ ΠΈΠ½ΡΠ΅ΡΠΊΠΎΠ½Π½Π΅ΠΊΡΠΈΠΈ ΠΈΡΡΠΎΡΠ½ΠΈΠΊΠΎΠ² ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½Π½ΠΎΠΉ Π³Π΅Π½Π΅ΡΠ°ΡΠΈΠΈ
DIFFERENTIAL DIAGNOSIS OF AUTOSOMAL RECESSIVE RHIZOMELIC AND X LINKED RECESSIVE CHONDRODYSPLASIA PUNCTATA
Backgating high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates
Backgating effect as well as breakdown and high-current performance of AlGaN/GaN HEMTs on silicon substrates are studied. The material structure of investigated devices differ in the thickness of stressrelaxing intermediate layer sequence (~1 ΞΌm and ~2.5 ΞΌm thick). It is shown that the transistor backgating effect is reduced for the thicker sequence. Similarly, the reverse gate current is two orders of the magnitude lower and the gate-drain breakdown voltage increases substantially in devices with the thicker sequence. Increase from ~40 V to ~160 V of the HEMT blocking capability measured under electrostatic discharge-like conditions is also observed