Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance

In order to elucidate the nature of ferromagnetic signatures observed in (Zn,Co)O we have examined experimentally and theoretically magnetic properties and spin-dependent quantum localization effects that control low-temperature magnetoresistance. Our findings, together with a through structural characterization, substantiate the model assigning spontaneous magnetization of (Zn,Co)O to uncompensated spins at the surface of antiferromagnetic nanocrystal of Co-rich wurtzite (Zn,Co)O. The model explains a large anisotropy observed in both magnetization and magnetoresistance in terms of spin hamiltonian of Co ions in the crystal field of the wurtzite lattice.Comment: 6 pages, 6 figure

Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films

Effects of spin-orbit coupling and s-d exchange interaction are probed by magnetoresistance measurements carried out down to 50 mK on ZnO and Zn_{1-x}Mn_{x}O with x = 3 and 7%. The films were obtained by laser ablation and doped with Al to electron concentration ~10^{20} cm^{-3}. A quantitative description of the data for ZnO:Al in terms of weak-localization theory makes it possible to determine the coupling constant \lambda_{so} = (4.4 +- 0.4)*10^{-11} eVcm of the kp hamiltonian for the wurzite structure, H_{so} = \lambda_{so}*c(s x k). A complex and large magnetoresistance of Zn_{1-x}Mn_{x}O:Al is interpreted in terms of the influence of the s-d spin-splitting and magnetic polaron formation on the disorder-modified electron-electron interactions. It is suggested that the proposed model explains the origin of magnetoresistance observed recently in many magnetic oxide systems.Comment: 4 pages, 4 figure

A new magnetic field dependence of Landau levels on a graphene like structure

We consider a tight-binding model on the honeycomb lattice in a magnetic field. For special values of the hopping integrals, the dispersion relation is linear in one direction and quadratic in the other. We find that, in this case, the energy of the Landau levels varies with the field B as E_n(B) ~ [(n+\gamma)B]^{2/3}. This result is obtained from the low-field study of the tight-binding spectrum on the honeycomb lattice in a magnetic field (Hofstadter spectrum) as well as from a calculation in the continuum approximation at low field. The latter links the new spectrum to the one of a modified quartic oscillator. The obtained value $\gamma=1/2$ is found to result from the cancellation of a Berry phase.Comment: 4 pages, 4 figure

Magnetic properties of undoped Cu2O fine powders with magnetic impurities and/or cation vacancies

Fine powders of micron- and submicron-sized particles of undoped Cu2O semiconductor, with three different sizes and morphologies have been synthesized by different chemical processes. These samples include nanospheres 200 nm in diameter, octahedra of size 1 micron, and polyhedra of size 800 nm. They exhibit a wide spectrum of magnetic properties. At low temperature, T = 5 K, the octahedron sample is diamagnetic. The nanosphere is paramagnetic. The other two polyhedron samples synthesized in different runs by the same process are found to show different magnetic properties. One of them exhibits weak ferromagnetism with T_C = 455 K and saturation magnetization, M_S = 0.19 emu/g at T = 5 K, while the other is paramagnetic. The total magnetic moment estimated from the detected impurity concentration of Fe, Co, and Ni, is too small to account for the observed magnetism by one to two orders of magnitude. Calculations by the density functional theory (DFT) reveal that cation vacancies in the Cu2O lattice are one of the possible causes of induced magnetic moments. The results further predict that the defect-induced magnetic moments favour a ferromagnetically coupled ground state if the local concentration of cation vacancies, n_C, exceeds 12.5%. This offers a possible scenario to explain the observed magnetic properties. The limitations of the investigations in the present work, in particular in the theoretical calculations, are discussed and possible areas for further study are suggested.Comment: 20 pages, 5 figures 2 tables, submitted to J Phys Condense Matte

Electromodulation of the Magnetoresistance in Diluted Magnetic Semiconductors Based Heterostructures

We study the properties of heterostructures formed by two layers of diluted magnetic semiconductor separated by a nonmagnetic semiconductor layer. We find that there is a RKKY-type exchange coupling between the magnetic layers that oscilles between ferromagnetic and antiferromagnetic as a function of the different parameters in the problem. The different transport properties of these phases make that this heterostructure presents strong magnetoresistive effects. The coupling can be also modified by an electric field. We propose that it is possible to alter dramatically the electrical resistance of the heterostructure by applying an electric field. Our results indicate that in a single gated sample the magnetoresistance could be modulated by with an electrical bias voltage.Comment: 4 pages, 5 figures include

Spin separation in digital ferromagnetic heterostructures

In a study of the ferromagnetic phase of a multilayer digital ferromagnetic semiconductor in the mean-field and effective-mass approximations, we find the exchange interaction to have the dominant energy scale of the problem, effectively controlling the spatial distribution of the carrier spins in the digital ferromagnetic heterostructures. In the ferromagnetic phase, the majority and minority carriers tend to be in different regions of the space (spin separation). Hence, the charge distribution of carriers also changes noticeably from the ferromagnetic to the paramagnetic phase. An example of a design to exploit these phenomena is given.Comment: 4 pages, 3 figures. Submitted to Phys. Rev.