Development of conjugate vaccines for enteric fever

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Therapeutic effects of pyrrolidine dithiocarbamate on acute lung injury in rabbits

<p>Abstract</p> <p>Background</p> <p>Acute lung injury (ALI) and acute respiratory distress syndrome (ARDS) is an early characteristic of multiple organ dysfunction, responsible for high mortality and poor prognosis in patients. The present study aims to evaluate therapeutic effects and mechanisms of pyrrolidine dithiocarbamate (PDTC) on ALI.</p> <p>Methods</p> <p>Alveolar-arterial oxygen difference, lung tissue edema and compromise, NF-κB activation in polymorphonuclear neutrophil (PMN), and systemic levels of tumor necrosis factor-alpha (TNFa) and intercellular adhesion molecule-1 (ICAM-1) in rabbits induced by the intravenous administration of lipopolysaccharide (LPS) and treated with PDTC. Production of TNFa and IL-8, activation of Cathepsin G, and PMNs adhesion were also measured.</p> <p>Results</p> <p>The intravenous administration of PDTC had partial therapeutic effects on endotoxemia-induced lung tissue edema and damage, neutrophil influx to the lung, alveolar-capillary barrier dysfunction, and high systemic levels of TNFa and ICAM-1 as well as over-activation of NF-κB. PDTC could directly and partially inhibit LPS-induced TNFa hyper-production and over-activities of Cathepsin G. Such inhibitory effects of PDTC were related to the various stimuli and enhanced through combination with PI3K inhibitor.</p> <p>Conclusion</p> <p>NF-κB signal pathway could be one of targeting molecules and the combination with other signal pathway inhibitors may be an alternative of therapeutic strategies for ALI/ARDS.</p

The 2018 GaN power electronics roadmap

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here

Direct bonding of titanium layers on silicon

International audienceDirect metal bonding is a key technology for 3D integration that will allow semiconductor industry to go beyond predicted problems of future ICs. In this paper, for the first time, we show room temperature direct bonding of titanium layers on silicon wafers at atmospheric pressure and ambient air. Transmission electron microscopy and spreading scanning resistance microscopy are used to investigate bonding interface. Several physical mechanisms of titanium-titanium interface sealing during subsequent thermal annealing are observed and compared to copper and tungsten in terms of bonding mechanism and temperature dependenc

Modeling and Integration Phenomena of metal-metal direct bonding technology

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Production of a conjugate vaccine for Salmonella enterica serovar Typhi from Citrobacter Vi.

A conjugate vaccine for Salmonella enterica serovar Typhi was produced by chemically linking Vi, purified from Citrobacter, to the non-toxic mutant diphtheria toxin CRM(197) via an adipic dihydrazide spacer using N-(3-Dimethylaminopropyl)-N'-ethylcarbodiimide coupling chemistry. The polysaccharide purification process was developed based on Vi precipitation from culture supernatant with cetyl trimethylammonium bromide (CTAB), solubilization of the CTA-polysaccharide salt with ethanol followed by exchange of the CTA(+) counter ion with Na(+). The purified Vi polysaccharide was fully O-acetylated and with high purity. The conjugation process was optimized to obtain a scalable process that has been used for GMP production at pilot scale of vaccine currently in clinical trials

Evaluation of Titanium Direct Bonding MechanismStudy of crystal-crucible detachment: GaSb in SiO2

International audienceDirect metal bonding represents an advanced joining technology that allows vertical stacking with electrical conduction and even heat dissipation. For most metals used as bonding layers, direct bonding when operating under ambient conditions involves metal oxides. The bonding interface saddles with a trapped oxide layer that might affect electrical conduction and even complete sealing of bonding interface. Titanium especially because of its high affinity with oxygen makes oxide free direct bonding very difficult. In the mean time, the remarkable getter effect of Ti matrix allows the dissolution of oxygen during post bonding annealing. In this paper, the bonding limits with regards to the titanium thickness have been investigated. The key role of layer roughness on the bonding quality and energy has been pointed out. A titanium thickness below 10 nm appears as a limit for an oxide free bonding in our conditions. (C) 2013 The Electrochemical Society

Valore semeiotico della Velocimetria Doppler per il sospetto di piastrinopenia fetale in neonati IUGR con Ared in arteria ombelicale

Il nostro risultato è sostanzialmente in linea con la letteratura internazionale, ma dimostra in modo originale il valore del PI (Pulsatility Index) MCA ( Arteria Cerebrale Media) per sospettare la piastrenopenia neonatale in feti IUGR ( Intra Uterine Growth Restriction) con ARED (Absent or Reverse end-Diastolic Flow), ad alto rischio di sviluppo di alterazioni emocromo citometriche, le quali, se non prontamente adeguatamente corrette, come dimostrano anche i nostri casi, possono portare anche al decesso in epoca neonatale.Essendo dimostrato che L'ARED in UA ( Umbilical Artery) si apprezza quando almeno il 70% del letto planentare è obliterato ed essendo in gran parte responsabile di questa obliterazione l'insorgenza di fenomeni trombotici a quel livello con consumo di piastrine e globuli rossi, si capisce la fisiopatologia dello sviluppo di piastrinopenia.Un ulteriore aggravamento dello stato ossigeno-metabolico fetale, che si associa a piastrinopenia ed incremento di globuli rossi nucleati in circolo è anche associato ad incremento del rischio di patologia cerebrale neonatale e, dunque, il cut-off per il parametro PI MCA che otteniamo per predire la piastrinopenia neonatale ci spinge ad ulteriori conferme acquisendo valore non solo per gli ostetrici per un'adeguata decisione sul timing del parto, ma anche per i neonatologi e per gli ematologi per un corretto management di questi neonati ad alto rischio di complicazioni

Next generation image sensor via direct hybrid bonding

International audienc