Cleaning graphene : a first quantum/classical molecular dynamics approach

Graphene outstanding properties created a huge interest in the condensed matter community and unprecedented fundings at the international scale in the hope of application developments. Recently, there have been several reports of incomplete removal of the polymer resists used to transfer as-grown graphene from one substrate to another, resulting in altered graphene transport properties. Finding a large-scale solution to clean graphene from adsorbed residues is highly desirable and one promising possibility would be to use hydrogen plasmas. In this spirit, we couple here quantum and classical molecular dynamics simulations to explore the kinetic energy ranges required by atomic hydrogen to selectively etch a simple residue, a CH3 group, without irreversibly damaging the graphene. For incident energies in the 2-15 eV range, the CH3 radical can be etched by forming a volatile CH4 compound which leaves the surface, either in the CH4 form or breaking into CH3+H fragments, without further defect formation. At this energy, adsorption of H atoms on graphene is possible and further annealing will be required to recover pristine graphene.Comment: 9 figures, 27 page

Graphenes in the absence of metals as carbocatalysts for selective acetylene hydrogenation and alkene hydrogenation

Catalysis makes possible a chemical reaction by increasing the transformation rate. Hydrogenation of carbon-carbon multiple bonds is one of the most important examples of catalytic reactions. Currently, this type of reaction is carried out in petrochemistry at very large scale, using noble metals such as platinum and palladium or first row transition metals such as nickel. Catalysis is dominated by metals and in many cases by precious ones. Here we report that graphene (a single layer of one-atom-thick carbon atoms) can replace metals for hydrogenation of carbon-carbon multiple bonds. 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Molecular dynamics simulations of hydrogen plasma interaction with graphene

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Alternative solutions for nm-precision etching: H2 Plasmas Modification of Si/ SiN thin-films

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Molecular dynamics simulations of GaAs sputtering under low energy argon ion bombardment

International audienceResults from molecular dynamics (MD) simulations of low-energy (50–200 eV) Ar+ ion bombardment on (110) GaAs surfaces are reported. A new analytical bond-order potential, originally developed for molecular beam epitaxy studies, is used and tested in the context of etching to investigate the nature and effects of physical sputtering on GaAs compounds. It is found that a thermal desorption model, which accounts for long time scale phenomena between MD simulated impacts, is necessary to achieve steady state sputtering. An initial rapid etch of both atomic species is observed up to 4x10^16 ions/cm2 fluence with preferential sputtering of Ga atoms. At high fluences, simulations show the formation of an As-rich layer on the top surface, a subsurface enrichment of Ga, and a return to stoichiometry deeper in the solid. More than 97% of sputtered or desorbed species appear to be Ga or As atoms; sputtering of GaAs molecules is negligible. All these observations are in agreement with published experimental results. Finally, a significant fraction of the atoms leave the surface with more than 10% of the incident ion energy, which could alter passivation layers on sidewalls during etching

Atomic-scale simulations of helium plasma modification of SiO2 thin-films for advanced etch processes

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Modification mechanisms of silicon thin films in low-temperature hydrogen plasmas

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MD simulations of low energy Clx+ ions interaction with ultrathin Si layers for advanced etch processes

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Atomistic Simulations of He Plasma Modification of Si/SiN Thin-Films for Advanced Etch Processes

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MD simulations of low energy Clx+ ions interaction with ultrathin silicon layers for advanced etch processes

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