Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells

In this letter, we explore the influence of the Cu(x)Te(1-x) layer composition (0.2 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties. The intermediate range 0.5< x < 0.7 shows optimum memory properties, featuring improved control of filament programming using <5 mu A as well as state stability at 85 degrees C. The composition-dependent programming control and filament stability are closely associated with the phases in the Cu(x)Te(1-x) layer and are explained as related to the chemical affinity between Cu and Te. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3621835

Biopreservation of chocolate mousse with Lactobacillus helveticus 2/20: Microbial Challenge Test

Probiotic bacteria are used for food biopreservation because their metabolic products might contribute to ensuring food microbiological safety and/or increase its shelf life without the addition of chemical preservatives. Moreover, biopreserved foods are excellent vehicles for the delivery of probiotic bacteria. The aim of the study was to investigate the potential of chocolate mousse food matrix for the delivery of the probiotic strain Lactobacillus helveticus 2/20 (Lb. helveticus 2/20) and to investigate its capacity to inhibit the growth of two foodborne pathogenic bacteria (Staphylococcus aureus and Escherichia coli). Therefore, the populations of free or encapsulated in calcium alginate Lb. helveticus 2/20 cells and/or of each pathogen (used to voluntarily contaminate each sample) were monitored both in complex nutrient medium (MRS broth) and in chocolate mousse under refrigeration conditions and at room temperature. Lb. helveticus 2/20 alone in free or encapsulated state effectively inhibited the growth of Escherichia coli ATCC 25922 and Staphylococcus aureus ATCC 25923 in chocolate mousse when stored at 20 ± 2 °C. Practically no viable unwanted bacteria were identified on the 7th day from the beginning of the process. High viable Lb. helveticus 2/20 cell populations were maintained during storage under refrigerated conditions (4 ± 2 °C) and at room temperature. Chocolate mousse is thus a promising food matrix to deliver probiotic Lb. helveticus 2/20 cells, which could also protect it from contamination by unwanted bacteria

Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability

Random telegraph noise (RTN) is an important intrinsic phenomenon of any logic or memory device that is indicative of the reliability and stochastic variability in its performance. In the context of the resistive random access memory (RRAM), RTN becomes a key criterion that determines the read disturb immunity and memory window between the low (LRS) and high resistance states (HRS). With the drive towards ultra-low power memory (low reset current) and aggressive scaling to 10 × 10 nm2 area, contribution of RTN is significantly enhanced by every trap (vacancy) in the dielectric. The underlying mechanisms governing RTN in RRAM are yet to be fully understood. In this study, we aim to decode the role of conductance fluctuations caused by oxygen vacancy transport and inelastic electron trapping and detrapping processes. The influence of resistance state (LRS, shallow and deep HRS), reset depth and reset stop voltage (VRESET-STOP) on the conductance variability is also investigated. © 2013 IEEE

RTN in GexSe1-x OTS Selector Devices

Random telegraph noise (RTN) signals in GexSe1-x ovonic threshold switching (OTS) selector have been analyzed in this work, both before and after the first-fire (FF) operation and at on- and off-states. It is observed that RTN appears after the FF, and its absolute amplitude at the off-state is small and negligible in comparison with the RTN signals in RRAM devices. At the on-state, large RTN signals are observed, which can either partially or fully block the conduction path, supporting that a conductive filament is formed or activated by FF and then modulated during switching. Statistical analysis reveals that the relative RTN amplitude at on-state in GexSe1-x OTS selector is smaller than or equivalent to those in RRAM devices

Stochastic computing based on volatile GeSe ovonic threshold switching selectors

Stochastic computing (SC) is a special type of digital compute strategy where values are represented by the probability of 1 and 0 in stochastic bit streams, which leads to superior hardware simplicity and error-tolerance. In this paper, we propose and demonstrate SC with GeSe based Ovonic Threshold Switching (OTS) selector devices by exploiting their probabilistic switching behavior. The stochastic bit streams generated by OTS are demonstrated with good computation accuracy in both multiplication operation and image processing circuit. Moreover, the bit distribution has been statistically studied and linked to the collective defect de/localization behavior in the chalcogenide material. Weibull distribution of the delay time supports the origin of such probabilistic switching, facilitates further optimization of the operation condition, and lays the foundation for device modelling and circuit design. Considering its other advantages such as simple structure, fast speed, and volatile nature, OTS is a promising material for implementing SC in a wide range of novel applications, such as image processors, neural networks, control systems and reliability analysis

GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator

In this paper, we propose and demonstrate a novel technique for true random number generator (TRNG) application using GeSe-based Ovonic threshold switching (OTS) selector devices. The inherent variability in OTS threshold voltage results in a bimodal distribution of on/off states which can be easily converted into digital bits. The experimental evaluation shows that the proposed TRNG enables the generation of high-quality random bits that passed 12 tests in the National Institute of Standards and Technology statistical test suite without complex external circuits for post-processing. The randomness is further evidenced by the prediction rate of ∼50% using machine learning algorithm. Compared with the TRNGs based on non-volatile memories, the volatile nature of OTS avoids the reset operation, thus further simplifying the operation and improving the generation frequency

Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors

Ovonic threshold switching (OTS) selector is a promising candidate to suppress the sneak current paths in resistive switching memory (RRAM) arrays. Variations in the threshold voltage (Vth), and the hold voltage (Vhd) have been reported, but a quantitative analysis of the switching probability dependence on the OTS operation conditions is still missing. A novel characterization method is developed in this work, and the time-to-switch-on/off (ton/toff) at a constant VOTS is found following the Weibull distribution, based on which the dependence of switching probability on pulse bias and time can be extracted and extrapolated, and the switching probability can be ensured with appropriately chosen operation conditions. The difference between square and triangle switching pulses is also explained. This provides a practical guidance for predicting the switching probability under different operation conditions and for designing reliable one-selector-one-RRAM (1S1R) arrays

Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching

Volatile Ovonic threshold switching (OTS) are promising not only as the selector in crossbar resistive switching memory arrays, but also as true random number generators (TRNG) by utilizing its probabilistic switching characteristics. However, investigation on the reliability of OTS-based TRNG is still lacking, which hinders its practical application. Previously, we found that switching probability is dependent on the pulse amplitude and width. In this work, we report that relaxation which happens during the time interval between pulses can cause switching probability drift. Optimizing the bit-generation waveform and modulating the pulse conditions could provide a practical solution, in addition to the impact of external bias and temperature. This work provides useful guidance for the practical design and operation of OTS-based TRNGs

Cycling induced metastable degradation in GeSe Ovonic threshold switching selector

Ovonic threshold switching (OTS) selector is a promising candidate to suppress the sneak current paths in emerging memory arrays, but there is still a gap between its performance and the rigorous requirement from memory devices, especially its endurance improvement is hindered by insufficient understanding of the mechanism. In this work, cycling induced degradation of GeSe-based OTS selectors is studied with electrical characterization techniques. The existence of metastable state between the on- and off-state during cycling is observed and statistically analyzed alongside with the gradual off-state leakage current increase. Such metastable degradation may be attributed to the generation of unstable Ge-Ge bonds that might be induced by element segregation, which is also responsible for the higher off-state leakage current in GeSe selectors after large cycling or with higher Ge component. This work provides experimental guidance for optimizing OTS selectors