Hybrid integrated mode-locked laser diodes with a silicon nitride extended cavity

Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high linear and nonlinear losses that limit the performance of these lasers. By extending such lasers with, for example, an external cavity the performance can be increased considerably. In this paper, we demonstrate for the first time that a high-performance mode-locked laser can be achieved with a butt-coupling integration technique using chip scale silicon nitride waveguides. A platform-independent SiN/SU8 coupler design is used to couple between the silicon nitride external cavity and the III/V active chip. Mode-locked lasers at 2.18 GHz and 15.5 GHz repetition rates are demonstrated with Lorentzian RF linewidths several orders of magnitude smaller than what has been demonstrated on monolithic InP platforms. The RF linewidth was 31 Hz for the 2.18 GHz laser.Comment: Submitted to Optics Expres

Micro-transfer printing of lithium niobate on silicon nitride

Successful micro-transfer printing of lithium niobate on a silicon nitride platform is demonstrated. A proof of concept electro-optical modulator is fabricated using this hybrid integration method which shows a half-wave voltage-length product VπLπ=5.5 Vcm and insertion losses of 7 dB

High-grade endometrial stromal sarcoma presenting in a 28-year-old woman during pregnancy: a case report

<p>Abstract</p> <p>Introduction</p> <p>To the best of our knowledge, soft tissue sarcomas have not prevously been reported as a complication during pregnancy.</p> <p>Case presentation</p> <p>A 28-year-old Caucasian woman was diagnosed with a transperitoneal sarcoma during pregnancy. Morphological, immunohistochemical, chromosomal and mutational analyses pointed towards a high-grade endometrial stromal sarcoma. Although surgery and chemotherapy are possible during pregnancy, we were unable to perform these in this case.</p> <p>Conclusion</p> <p>The potential to treat gynecological cancer during pregnancy should always be assessed individually.</p

Ultra-dense III-V-on-silicon nitride frequency comb laser

A heterogeneously integrated III-V-on-silicon nitride mode-locked laser is demonstrated. The device is fabricated by microtransfer printing an InP/InAlGaAs-based multiple-quantum-well coupon. A dense comb with a 755 MHz repetition rate, a 1 Hz ASE limited RF linewidth and a 200 kHz optical linewidth is achieved

Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when combined with phase modulators and low-noise lasers, have the potential to improve the current state of the art of the most critical components in coherent communications, beam steering, and microwave photonics applications. However, the large refractive index difference between silicon nitride and common III-V gain materials in the telecom wavelength range hampers the integration of electrically pumped III-V semiconductor lasers on a silicon nitride waveguide chip. Here, we present an approach to overcome this refractive index mismatch by using an intermediate layer of hydrogenated amorphous silicon, followed by the microtransfer printing of a prefabricated III-V semiconductor optical amplifier. Following this approach, we demonstrate a heterogeneously integrated semiconductor optical amplifier on a silicon nitride waveguide circuit with up to 14 dB gain and a saturation power of 8 mW. We further demonstrate a heterogeneously integrated ring laser on a silicon nitride circuit operating around 1550 nm. This heterogeneous integration approach would not be limited to silicon-nitride-based platforms: it can be used advantageously for any waveguide platform with low-refractive-index waveguide materials such as lithium niobate

III/V-on-lithium niobate amplifiers and lasers

We demonstrate electrically pumped, heterogeneously integrated lasers on thin-film lithium niobate, featuring electro-optic wavelength tunability. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreemen

Heterogeneous integration in silicon photonics through micro-transfer-printing

Micro-transfer-printing enables the intimate integration of a wide range of opto-electronic micro-components on a silicon photonics platform. This technique allows for wafer-scale integration in a massively parallel manner with high alignment accuracy, high throughput and high yield, therefore leading to a cost reduction of complex photonic integrated circuits

III-V-on-Si photonic integrated circuits realized using micro-transfer-printing

Silicon photonics (SiPh) enables compact photonic integrated circuits (PICs), showing superior performance for a wide variety of applications. Various optical functions have been demonstrated on this platform that allows for complex and powerful PICs. Nevertheless, laser source integration technologies are not yet as mature, hampering the further cost reduction of the eventual Si photonic systems-on-chip and impeding the expansion of this platform to a broader range of applications. Here, we discuss a promising technology, micro-transfer-printing (μTP), for the realization of III-V-on-Si PICs. By employing a polydimethylsiloxane elastomeric stamp, the integration of III-V devices can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs. This paper summarizes some of the recent developments in the use of μTP technology for realizing the integration of III-V photodiodes and lasers on Si PICs

Micro-transfer-printing for III-V/Si PICs

Micro-transfer-printing (µTP) enables the intimate integration of a variety of III-V opto-electronic components on silicon photonic integrated circuits (Si PICs). It allows for the scalable manufacturing of complex III-V/Si PICs at low cost