145 research outputs found

    Deposition of biaxially aligned YSZ layers by dual unbalanced magnetron sputtering

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    Biaxially aligned YSZ (Yttria Stabilised Zirconia) layers were deposited by unbalanced magnetron sputtering, in a dual magnetron geometry. The unbalanced magnetrons were mounted in such a way that the angle between the target- and substrate normal was 55° for both magnetrons. The target-substrate distance was 13 cm for both magnetrons. A better homogeneity in deposition rate and biaxial alignment was obtained with respect to depositions with one unbalanced magnetron. The YSZ layers were characterized by XRD θ/2θ and (111) pole figures and showed a [001] out-of-plane orientation and a [110] in-plane orientation. The best biaxially aligned YSZ layers obtained so far, showed a FWHM of 21° in (111) pole figures. The influence of the magnet configuration (closed-field or mirror-field) and sputter conditions on the biaxial alignment was investigated. Gauss and Langmuir probe measurements were performed to investigate the influence of the magnet configuration and sputter conditions on the plasma density and the magnetic field lines

    Modeling reactive magnetron sputtering : opportunities and challenges

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    The complexity of the reactive magnetron sputtering process is demonstrated by four simulation examples. The examples, commonly encountered during the application of this process for thin film deposition, are described by a numerical model for reactive sputter deposition. A short description of the current model precedes these case studies. In the first example, redeposition of sputtered atoms on the target is studied by its effect on the hysteresis behavior often observed during reactive sputtering. Secondly, the complexity of current-voltage characteristics during reactive magnetron sputtering is treated. The influence of substrate rotation and the pulsing of the discharge current illustrate the time dependence of the reactive sputtering process. As a conclusion, the two main challenges for a further improvement of the model are discussed
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