A Physical Realization of the Generalized PT-, C-, and CPT-Symmetries and the Position Operator for Klein-Gordon Fields

Generalized parity (P), time-reversal (T), and charge-conjugation (C)operators were initially definedin the study of the pseudo-Hermitian Hamiltonians. We construct a concrete realization of these operators for Klein-Gordon fields and show that in this realization PT and C operators respectively correspond to the ordinary time-reversal and charge-grading operations. Furthermore, we present a complete description of the quantum mechanics of Klein-Gordon fields that is based on the construction of a Hilbert space with a relativistically invariant, positive-definite, and conserved inner product. In particular we offer a natural construction of a position operator and the corresponding localized and coherent states. The restriction of this position operator to the positive-frequency fields coincides with the Newton-Wigner operator. Our approach does not rely on the conventional restriction to positive-frequency fields. Yet it provides a consistent quantum mechanical description of Klein-Gordon fields with a genuine probabilistic interpretation.Comment: 20 pages, published versio

Energy and entropy of relativistic diffusing particles

We discuss energy-momentum tensor and the second law of thermodynamics for a system of relativistic diffusing particles. We calculate the energy and entropy flow in this system. We obtain an exact time dependence of energy, entropy and free energy of a beam of photons in a reservoir of a fixed temperature.Comment: 14 pages,some formulas correcte

Dissipative hydrodynamics in 2+1 dimension

In 2+1 dimension, we have simulated the hydrodynamic evolution of QGP fluid with dissipation due to shear viscosity. Comparison of evolution of ideal and viscous fluid, both initialised under the same conditions e.g. same equilibration time, energy density and velocity profile, reveal that the dissipative fluid evolves slowly, cooling at a slower rate. Cooling get still slower for higher viscosity. The fluid velocities on the otherhand evolve faster in a dissipative fluid than in an ideal fluid. The transverse expansion is also enhanced in dissipative evolution. For the same decoupling temperature, freeze-out surface for a dissipative fluid is more extended than an ideal fluid. Dissipation produces entropy as a result of which particle production is increased. Particle production is increased due to (i) extension of the freeze-out surface and (ii) change of the equilibrium distribution function to a non-equilibrium one, the last effect being prominent at large transverse momentum. Compared to ideal fluid, transverse momentum distribution of pion production is considerably enhanced. Enhancement is more at high $p_T$ than at low $p_T$. Pion production also increases with viscosity, larger the viscosity, more is the pion production. Dissipation also modifies the elliptic flow. Elliptic flow is reduced in viscous dynamics. Also, contrary to ideal dynamics where elliptic flow continues to increase with transverse momentum, in viscous dynamics, elliptic flow tends to saturate at large transverse momentum. The analysis suggest that initial conditions of the hot, dense matter produced in Au+Au collisions at RHIC, as extracted from ideal fluid analysis can be changed significantly if the QGP fluid is viscous.Comment: 11 pages, 10 figures (revised). In the revised version, calculations are redone with ADS/CFT and perurbative estimate of viscosity. Comments on the unphysical effects like early reheating of the fluid, in 1st order dissipative theories are added. The particle spectra calculations are redone with modified programm

Scattering Theory of Charge-Current Induced Magnetization Dynamics

In ferromagnets, charge currents can excite magnons via the spin-orbit coupling. We develop a novel and general scattering theory of charge current induced macrospin magnetization torques in normal metal$|$ferromagnet$|$normal metal layers. We apply the formalism to a dirty GaAs$|$(Ga,Mn)As$|$GaAs system. By computing the charge current induced magnetization torques and solving the Landau-Lifshitz-Gilbert equation, we find magnetization switching for current densities as low as $5\times 10^{6}$~A/cm$^2$. Our results are in agreement with a recent experimental observation of charge-current induced magnetization switching in (Ga,Mn)As.Comment: Final version accepted by EP

Collision Thermalization of Nucleons in Relativistic Heavy-Ion Collisions

We consider a possible mechanism of thermalization of nucleons in relativistic heavy-ion collisions. Our model belongs, to a certain degree, to the transport ones; we investigate the evolution of the system created in nucleus-nucleus collision, but we parametrize this development by the number of collisions of every particle during evolution rather than by the time variable. We based on the assumption that the nucleon momentum transfer after several nucleon-nucleon (-hadron) elastic and inelastic collisions becomes a random quantity driven by a proper distribution. This randomization results in a smearing of the nucleon momenta about their initial values and, as a consequence, in their partial isotropization and thermalization. The trial evaluation is made in the framework of a toy model. We show that the proposed scheme can be used for extraction of the physical information from experimental data on nucleon rapidity distribution.Comment: 13 pages, 8 figure

Depletion-Isolation Effect in Vertical MOSFETs During the Transition From Partial to Fully Depleted Operation

A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm. For pillar thicknesses between 200–60 nm, the output characteristics with and without impact ionization are identical at a low drain bias and then diverge at a high drain bias. The critical drain bias Vdc for which the increased drain–current is observed is found to decrease with a reduction in pillar thickness. This is explained by the onset of FBEs at progressively lower values of the drain bias due to the merging of the drain depletion regions at the bottom of the pillar (depletion isolation). For pillar thicknesses between 60–10 nm, the output characteristics show the opposite behavior, namely, the critical drain bias increases with a reduction in pillar thickness. This is explained by a reduction in the severity of the FBEs due to the drain debiasing effect caused by the elevated body potential. Both depletion isolation and gate–gate coupling contribute to the drain–current for pillar thicknesses between 100–40 nm

Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 10 6-10 8. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 10 7 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RM

Improved drive current in RF vertical MOSFETS using hydrogen anneal

This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800 ?C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors without the hydrogen anneal. The value of drive current achieved is 250 ?A/?m, which is a record for thick pillar vertical MOSFETs. This improved performance is obtained even though a sacrificial oxidation was performed prior to the hydrogen anneal to smooth the pillar sidewall. The values of subthreshold slope and DIBL are 79 mV/decade and 45 mV/V, respectively, which are significantly better than most values reported in the literature for comparable devices. The H2 anneal is also shown to decrease the OFF-state leakage current by a factor of three

On the origin dependence of multipole moments in electromagnetism

The standard description of material media in electromagnetism is based on multipoles. It is well known that these moments depend on the point of reference chosen, except for the lowest order. It is shown that this "origin dependence" is not unphysical as has been claimed in the literature but forms only part of the effect of moving the point of reference. When also the complementary part is taken into account then different points of reference lead to different but equivalent descriptions of the same physical reality. This is shown at the microscopic as well as at the macroscopic level. A similar interpretation is valid regarding the "origin dependence" of the reflection coefficients for reflection on a semi infinite medium. We show that the "transformation theory" which has been proposed to remedy this situation (and which is thus not needed) is unphysical since the transformation considered does not leave the boundary conditions invariant.Comment: 14 pages, 0 figure