Drought-associated changes in climate and their relevance for ecosystem experiments and models

Drought periods can have important impacts on plant productivity and ecosystem functioning, but climatic conditions other than the lack of precipitation during droughts have never been quantified and have therefore not been considered explicitly in both experimental and modeling studies. Here, we identify which climatic characteristics deviate from normal during droughts and how these deviations could affect plant responses. Analysis of 609 years of daily data from nine Western European meteorological stations reveals that droughts in the studied region are consistently associated with more sunshine (+45 %), increased mean (+1.6 °C) and maximum (+2.8 °C) air temperatures and vapour pressure deficits that were 51 % higher than under normal conditions. These deviations from normal increase significantly as droughts progress. Using the process-model ORCHIDEE, we simulated droughts consistent with the results of the dataset analysis and compared water and carbon exchange of three different vegetation types during such natural droughts and droughts in which only the precipitation was affected. The comparison revealed contrasting responses: carbon loss was higher under natural drought in grasslands, while increased carbon uptake was found especially in decidious forests. This difference was attributed to better access to water reserves in forest ecosystems which prevented drought stress. This demonstrates that the warmer and sunnier conditions naturally associated with droughts can either improve growth or aggravate drought-related stress, depending on water reserves. As the impacts of including or excluding climatic parameters that correlate with drought are substantial, we propose that both experimental and modeling efforts should take into account other environmental factors than merely precipitation

Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs

Hall-effect structures with submicrometre linewidths (<0.3pm) have been fabricated in ferromagnetic thin films of Mn[sub 0.60]Al[sub 0.40] which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remanent magnetisation and an extraordinary Hall effect with square hysteretic behaviour. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, nonvolatile storage of digital information

Andreev reflection at high magnetic fields: Evidence for electron and hole transport in edge states

We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong magnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haas oscillations by a factor of about two, when normalized to the background. Additionally, we find that above a geometry-dependent magnetic field value the sample in the superconducting state has a higher longitudinal resistance than in the normal state. Both observations can be explained with edge channels populated with electrons and Andreev reflected holes.Comment: accepted for Phys Rev Lett, some changes to tex

Strongly reduced bias dependence in spin-tunnel junctions obtained by ultraviolet light assisted oxidation

For future implementation of ferromagnetic tunnel junctions, we need a better understanding of the influence of the insulating barrier preparation method on the junction resistance, tunnel magnetoresistance (TMR), and its voltage bias dependence. In this letter, we focus on the bias dependence of junctions (Co-Al2O3-Ni80Fe20) prepared by ultraviolet light assisted in situ oxidation in an O-2 ambient. For an initial Al thickness of 1.3 nm, the resistance times area product of the junctions is 60 k Omega mu m(2), while showing up to 20% TMR at 5 mV bias. The decrease of TMR with bias voltage up to 1 V is remarkably small leading to V-1/2, for which half of the low-bias TMR remains, well over 0.6 V. (C) 2000 American Institute of Physics. [S0003-6951(00)02908-9]