Twisted Nanotubes of Transition Metal Dichalcogenides with Split Optical Modes for Tunable Radiated Light Resonators

Synthesized micro- and nanotubes composed of transition metal dichalcogenides (TMDCs) such as MoS$_2$ are promising for many applications in nanophotonics, because they combine the abilities to emit strong exciton luminescence and to act as whispering gallery microcavities even at room temperature. In addition to tubes in the form of hollow cylinders, there is an insufficiently-studied class of twisted tubes, the flattened cross section of which rotates along the tube axis. As shown by theoretical analysis, in such nanotubes the interaction of electromagnetic waves excited at opposite sides of the cross section can cause splitting of the whispering gallery modes. By studying micro-photoluminescence spectra measured along individual MoS$_2$ tubes, it has been established that the splitting value, which controls the energies of the split modes, depends exponentially on the aspect ratio of the cross section, which varies in "breathing" tubes, while the relative intensity of the modes in a pair is determined by the angle of rotation of the cross section. These results open up the possibility of creating multifunctional tubular TMDC nanodevices that provide resonant amplification of self-emitting light at adjustable frequencies

A Computational and Spectroscopic Study of the Electronic Structure of V 2 O 5 -Based Cathode Materials

International audienceThe electronic structure of α-V 2 O 5 , γ-V 2 O 5 and γ-MeV 2 O 5 (Me = Li, Na) bronzes is studied by quantum-chemical calculations completed by spectroscopic experiments. The calculations are performed using G 0 W 0 method with DFT+U self-consistent wavefunction as an initial approximation. The electronic band gap E g = 2.89 eV calculated for α-V 2 O 5 is found to be in a fair agreement with available experimental data. The strategy was then applied to studying the electronic structure of the γ-V 2 O 5 phas

Multi-Frequency Light Sources Based on CVD Diamond Matrices with a Mix of SiV⁻ and GeV⁻ Color Centers and Tungsten Complexes

Recently, nanodiamonds with negatively charged luminescent color centers based on atoms of the fourth group (SiV−, GeV−) have been proposed for use as biocompatible luminescent markers. Further improvement of the functionality of such systems by expanding the frequencies of the emission can be achieved by the additional formation of luminescent tungsten complexes in the diamond matrix. This paper reports the creation of diamond matrices by a hot filament chemical vapor deposition method, containing combinations of luminescing Si-V and Ge-V color centers and tungsten complexes. The possibility is demonstrated of creating a multicolor light source combining the luminescence of all embedded emitters. The emission properties of tungsten complexes and Si-V and Ge-V color centers in the diamond matrices were investigated, as well as differences in their luminescent properties and electron-phonon interaction at different temperatures

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge

Raman Spectroscopy of Lattice-Matched Graphene on Strongly Interacting Metal Surfaces

Regardless of the widely accepted opinion that there is no Raman signal from single-layer graphene when it is strongly bonded to a metal surface, we present Raman spectra of a graphene monolayer on Ni(111) and Co(0001) substrates. The high binding energy of carbon to these surfaces allows formation of lattice-matched (1 X 1) structures where graphene is significantly stretched. This is reflected in a record-breaking shift of the Raman G band by more than 100 cm(-1) relative to the case of freestanding graphene. Using electron diffraction and photoemission spectroscopy, we explore the aforementioned systems together with polycrystalline graphene on Co and analyze possible intercalation of oxygen at ambient conditions. The results obtained are fully supported by Raman spectroscopy. Performing a theoretical investigation of the phonon dispersions of freestanding graphene and stretched graphene on the strongly interacting Co surface, we explain the main features of the Raman spectra. Our results create a reliable platform for application of Raman spectroscopy in diagnostics of chemisorbed graphene and related materials

Raman spectroscopy of lattice-matched graphene on strongly interacting metal surfaces

Regardless of the widely accepted opinion that there is no Raman signal from single-layer graphene when it is strongly bonded to a metal surface, we present Raman spectra of a graphene monolayer on Ni(111) and Co(0001) substrates. The high binding energy of carbon to these surfaces allows formation of lattice-matched (1 × 1) structures where graphene is significantly stretched. This is reflected in a record-breaking shift of the Raman G band by more than 100 cm–1 relative to the case of freestanding graphene. Using electron diffraction and photoemission spectroscopy, we explore the aforementioned systems together with polycrystalline graphene on Co and analyze possible intercalation of oxygen at ambient conditions. The results obtained are fully supported by Raman spectroscopy. Performing a theoretical investigation of the phonon dispersions of freestanding graphene and stretched graphene on the strongly interacting Co surface, we explain the main features of the Raman spectra. Our results create a reliable platform for application of Raman spectroscopy in diagnostics of chemisorbed graphene and related materials.L.V.Ya., D.Yu.U., O.Yu.V., and V.O.S. acknowledge RSF (Grant No. 16-42-01093). E.V.Ch. and I.Yu.S. acknowledge support by the Spanish Ministry of Science and Innovation (Grant No. FIS2016-75862-P). C.L. acknowledges DFG (Grant Nos. LA655-17/1 and LA655-19/1). E.V.Ch., D.Yu.U., D.V.V., V.O.S., and B.V.S. acknowledge Saint Petersburg State University (SPbU) for research Grant Nos. 11.65.42.2017 and 15.61.202.2015 and RFBR (Grant No. 17-02-00427). We thank Helmholtz-Zentrum Berlin für Materialien und Energie for support within the bilateral Russian−German Laboratory program.Peer Reviewe

Influence of Substrate Microstructure on the Transport Properties of CVD-Graphene

We report the study of electrical transport in few-layered CVD-graphene located on nanostructured surfaces in view of its potential application as a transparent contact to optoelectronic devices. Two specific surfaces with a different characteristic feature scale are analyzed: semiconductor micropyramids covered with SiO₂ layer and opal structures composed of SiO₂ nanospheres. Scanning tunneling microscopy (STM) and scanning electron microscopy (SEM), as well as Raman spectroscopy, have been used to determine graphene/substrate surface profile. The graphene transfer on the opal face centered cubic arrangement of spheres with a diameter of 230 nm leads to graphene corrugation (graphene partially reproduces the opal surface profile). This structure results in a reduction by more than 3 times of the graphene sheet conductivity compared to the conductivity of reference graphene located on a planar SiO₂ surface but does not affect the contact resistance to graphene. The graphene transfer onto an organized array of micropyramids results in a graphene suspension. Unlike opal, the graphene suspension on pyramids leads to a reduction of both the contact resistance and the sheet resistance of graphene compared to resistance of the reference graphene/flat SiO₂ sample. The sample annealing is favorable to improve the contact resistance to CVD-graphene; however, it leads to the increase of its sheet resistance