Universal characteristics of resonant-tunneling field emission from nanostructured surfaces

We have performed theoretical and experimental studies of field emission from nanostructured semiconductor cathodes. Resonant tunneling through electric-field-induced interface bound states is found to strongly affect the field-emission characteristics. Our analytical theory predicts power-law and Lorentzian-shaped current-voltage curves for resonant-tunneling field emission from three-dimensional substrates and two-dimensional accumulation layers, respectively. These predicted line shapes are observed in field emission characteristics from self-assembled silicon nanostructures. A simple model describes formation of an accumulation layer and of the resonant level in these systems.Comment: 5 pages, 4 figures, RevTex, to appear in J. Appl. Phy

Study of the Barringer Refractor Plate Correlation Spectrometer as a remote sensing instrument

Barringer refractor plate correlation spectrometer as remote sensing instrument of pollutant gases in atmospher

Coral symbiodinium community composition across the Belize Mesoamerican barrier reef system is influenced by host species and thermal variability

Accepted manuscrip

Precision Charmonium Spectroscopy From Lattice QCD

We present results for Charmonium spectroscopy using Non-Relativistic QCD (NRQCD). For the NRQCD action the leading order spin-dependent and next to leading order spin-independent interactions have been included with tadpole-improved coefficients. We use multi-exponential fits to multiple correlation functions to extract ground and excited $S$ states. Splittings between the lowest $S$, $P$ and $D$ states are given and we have accurate values for the $S$ state hyperfine splitting and the $\chi_c$ fine structure. Agreement with experiment is good - the remaining systematic errors are discussed.Comment: 23 pages uuencoded latex file. Contains figures in late

Hierarchical approach to 'atomistic' 3-D MOSFET simulation

We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1-μm MOSFETs. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional drift-diffusion atomistic simulation approach is first described and used to verify more economical, but restricted, options. To reduce processor time and memory requirements at high drain voltage, we have developed a self-consistent option based on a solution of the current continuity equation restricted to a thin slab of the channel. This is coupled to the solution of the Poisson equation in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison to the full self-consistent solution. At low drain voltage, a single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. In this case, the current is calculated by solving the current continuity equation in a drift approximation only, also in a thin slab containing the MOSFET channel. The regions of applicability for the different components of this hierarchical approach are illustrated in example simulations covering the random dopant-induced threshold voltage fluctuations, threshold voltage lowering, threshold voltage asymmetry, and drain current fluctuations

The origin of switching noise in GaAs/AlGaAs lateral gated devices

We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this noise, while an asymmetric bias exacerbates it. We propose a model in which the noise originates from a leakage current of electrons that tunnel through the Schottky barrier under the gate into the doped layer. The key to reducing noise is to keep this barrier opaque under experimental conditions. Bias cooling reduces the density of ionized donors, which builds in an effective negative gate voltage. A smaller negative bias is therefore needed to reach the desired operating point. This suppresses tunnelling from the gate and hence the noise. The reduction in the density of ionized donors also strengthens the barrier to tunneling at a given applied voltage. Support for the model comes from our direct observation of the leakage current into a closed quantum dot, around $10^{-20} \mathrm{A}$ for this device. The current was detected by a neighboring quantum point contact, which showed monotonic steps in time associated with the tunneling of single electrons into the dot. If asymmetric gate voltages are applied, our model suggests that the noise will increase as a consequence of the more negative gate voltage applied to one of the gates to maintain the same device conductance. We observe exactly this behaviour in our experiments.Comment: 8 pages, 7 figure

The Low Surface Brightness Extent of the Fornax Cluster

We have used a large format CCD camera to survey the nearby Fornax cluster and its immediate environment for low luminosity low surface brightness galaxies. Recent observations indicate that these are the most dark matter dominated galaxies known and so they are likely to be a good tracer of the dark matter in clusters. We have identified large numbers of these galaxies consistent with a steep faint end slope of the luminosity function (alpha~ -2) down to MB ~ -12. These galaxies contribute almost the same amount to the total cluster light as the brighter galaxies and they have a spatial extent that is some four times larger. They satisfy two of the important predictions of N-body hierarchical simulations of structure formation using dark halos. The luminosity (mass ?) function is steep and the mass distribution is more extended than that defined by the brighter galaxies. We also find a large concentration of low surface brightness galaxies around the nearby galaxy NGC1291.Comment: 16 pages, 6 figure