Schottky-Barrier Profiling Techniques in Semiconductors - Gate Current and Parasitic Resistance Effects

The theory for obtaining mobility and carrier concentration profiles by the Hall-effect, magnetoresistance, and capacitance-conductance methods is developed in the relaxation-time approximation. This theory is then applied to semiconductors in which a Schottky barrier is used to control a depletion region. Particular emphasis is given to field-effect transistor structures which are ideally suited for geometric magnetoresistance measurements. A unique feature of the present model is the correction for finite gate (Schottky-barrier) current, which can be very important under forward-gate-bias conditions. The ability to use forward-bias makes the near-surface region more accessible. Also, parasitic resistance effects are treated. We apply these results to GaAs conducting layers formed by direct implantation of 4X1012/cm2 , 100-keV Si ions into Cr-doped GaAs

NMR Determination of the Conduction-Electron Hyperfine Interaction in Crystalline CdO

Measurements of the Cd113 nuclear-spin-lattice relaxation time T1 and Hall effect in crystalline CdO, a degenerate semiconductor, have yielded the contact hyperfine strength of the conduction electrons at the nuclei. The product T1T=168 sec °K, independent of temperature T and frequency ν for T=1.4,4.2, and 77-350 °K, and for ν=2-10 MHz. Taking the carrier concentration N=2.6×1019 cm-3 independent of temperature to within 3% at 4.2, 77, and 300°K, and using an effective electron mass me*=0.2me, we calculate an averaged electron probability density at the nucleus, 〈|φF(0)|2〉=7×1025 cm-3, normalized to unity in an atomic volume. A comparison with 〈|φA(0)|2〉 in an isolated atom is interpreted to show that the Fermi level of the impurity band lies in the host-lattice conduction band. The Hall-effect data support this. The resonance frequency shift predicted from the Korringa relationship, -0.017%, is smaller than the observed shift, -0.031%. This is thought to be due to covalency contributions rather than to electron-electron interactions

Vacancy defect distributions in bulk ZnO crystals

We have used positron annihilation spectroscopy to study vacancy defects in ZnO single crystals grown by various methods from both commercial and academic sources. The combination of positron lifetime and Doppler broadening techniques with theoretical calculations provides the means to deduce both the identities and the concentrations of the vacancies. The annihilation characteristics of the Zn and O vacancies have been determined by studying electron-irradiated ZnO grown by the seeded vapor phase technique. The different ZnO samples were grown with the following techniques: the hydrothermal growth method, the seeded vapor phase technique, growth from melt (skull melting technique), and both conventional and contactless chemical vapor transport. We present a comparison of the vacancydefects and their concentrations in these materials.Peer reviewe

Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica

AbstractDisorder arising from random locations of charged donors and acceptors introduces localization and diffusive motion that can lead to constructive electron interference and positive magnetoconductivity. At very low temperatures, 3D theory predicts that the magnetoconductivity is independent of temperature or material properties, as verified for many combinations of thin-films and substrates. Here, we find that this prediction is apparently violated if the film thickness d is less than about 300 nm. To investigate the origin of this apparent violation, the magnetoconductivity was measured at temperatures T = 15 – 150 K in ten, Sn-doped In2O3 films with d = 13 – 292 nm, grown by pulsed laser deposition on fused silica. We observe a very strong thickness dependence which we explain by introducing a theory that postulates a second source of disorder, namely, non-uniform interface-induced defects whose number decreases exponentially with the interface distance. This theory obeys the 3D limit for the thickest samples and yields a natural figure of merit for interface disorder. It can be applied to any degenerate semiconductor film on any semi-insulating substrate

Recovery of Quenched Hopping Conduction in GaAs-Layers Grown by Molecular-Beam Epitaxy at 200-Degrees-C

The dark current at 82 K, in GaAs layers grown by molecular-beam epitaxy at 200 °C and annealed at 550 °C, is reduced by a factor 350 after 5 min of IR (hν\u3c~1.12 eV) light illumination. As temperature is swept upward at 0.2 K/s, the current recovers rapidly near 130 K. A numerical analysis of the current recovery, based on hopping conduction, gives an excellent fit to the data for a thermal recovery rate r=3×108 exp(-0.26/kT), very close to the rate observed for EL2 (AsGa). This proves that the conduction below 300 K in this material is due to hopping between AsGa-related centers in their ground states. Variable-range hopping [exp-(T0/T)1/4] gives a slightly better fit to the data than nearest-neighbor hopping [exp(-ɛ3/kT)] in the range T=82-160 K, but the fitted recovery rate is not strongly affected no matter which mechanism is assumed

GPS測位誤差と地震発生との関連解析

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Low-Temperature Growth of High Resistivity GaAs by Photoassisted Metalorganic Chemical Vapor Deposition

We report the photoassisted low‐temperature (LT) metalorganic chemical vapor deposition (MOCVD) of high resistivity GaAs. The undoped as‐grown GaAs exhibits a resistivity of ∼106 Ω cm, which is the highest reported for undoped material grown in the MOCVD environment. Photoassisted growth of doped and undoped device quality GaAs has been achieved at a substrate temperature of 400 °C in a modified atmospheric pressure MOCVD reactor. By using silane as a dopant gas, the LT photoassisted doped films have high levels of doping and electron mobilities comparable to those achieved by MOCVD for growth temperatures, Tg≳600 °C

Electron-Irradiation-Induced Deep Level in \u3cem\u3en\u3c/em\u3e-Type GaN

Deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at EC−0.18 eV. The production rate is approximately 0.2 cm−1, lower than the rate of 1 cm−1 found for the N vacancy by Hall-effect studies. The defect trap cannot be firmly identified at this time. ©1998 American Institute of Physics