9 research outputs found
Electric-Field Tuning of Spin-Dependent Exciton-Exciton Interactions in Coupled Quantum Wells
We have shown experimentally that an electric field decreases the energy
separation between the two components of a dense spin-polarized exciton gas in
a coupled double quantum well, from a maximum splitting of meV to
zero, at a field of 35 kV/cm. This decrease, due to the field-induced
deformation of the exciton wavefunction, is explained by an existing
calculation of the change in the spin-dependent exciton-exciton interaction
with the electron-hole separation. However, a new theory that considers the
modification of screening with that separation is needed to account for the
observed dependence on excitation power of the individual energies of the two
exciton components.Comment: 5 pages, 4 eps figures, RevTeX, Physical Review Letters (in press
Spin splitting in a polarized quasi-two-dimensional exciton gas
We have observed a large spin splitting between "spin" and
heavy-hole excitons, having unbalanced populations, in undoped GaAs/AlAs
quantum wells in the absence of any external magnetic field. Time-resolved
photoluminescence spectroscopy, under excitation with circularly polarized
light, reveals that, for high excitonic density and short times after the
pulsed excitation, the emission from majority excitons lies above that of
minority ones. The amount of the splitting, which can be as large as 50% of the
binding energy, increases with excitonic density and presents a time evolution
closely connected with the degree of polarization of the luminescence. Our
results are interpreted on the light of a recently developed model, which shows
that, while intra-excitonic exchange interaction is responsible for the spin
relaxation processes, exciton-exciton interaction produces a breaking of the
spin degeneracy in two-dimensional semiconductors.Comment: Revtex, four pages; four figures, postscript file Accepted for
publication in Physical Review B (Rapid Commun.
Spin dynamics in high-mobility two-dimensional electron systems
Understanding the spin dynamics in semiconductor heterostructures is highly
important for future semiconductor spintronic devices. In high-mobility
two-dimensional electron systems (2DES), the spin lifetime strongly depends on
the initial degree of spin polarization due to the electron-electron
interaction. The Hartree-Fock (HF) term of the Coulomb interaction acts like an
effective out-of-plane magnetic field and thus reduces the spin-flip rate. By
time-resolved Faraday rotation (TRFR) techniques, we demonstrate that the spin
lifetime is increased by an order of magnitude as the initial spin polarization
degree is raised from the low-polarization limit to several percent. We perform
control experiments to decouple the excitation density in the sample from the
spin polarization degree and investigate the interplay of the internal HF field
and an external perpendicular magnetic field. The lifetime of spins oriented in
the plane of a [001]-grown 2DES is strongly anisotropic if the Rashba and
Dresselhaus spin-orbit fields are of the same order of magnitude. This
anisotropy, which stems from the interference of the Rashba and the Dresselhaus
spin-orbit fields, is highly density-dependent: as the electron density is
increased, the kubic Dresselhaus term becomes dominant and reduces the
anisotropy.Comment: 13 pages, 6 figure
Exciton Spin Dynamics in Semiconductor Quantum Wells
In this paper we will review Exciton Spin Dynamics in Semiconductor Quantum
Wells. The spin properties of excitons in nanostructures are determined by
their fine structure. We will mainly focus in this review on GaAs and InGaAs
quantum wells which are model systems.Comment: 55 pages, 27 figure
Spin relaxation in low-dimensional systems
We review some of the newest findings on the spin dynamics of carriers and
excitons in GaAs/GaAlAs quantum wells. In intrinsic wells, where the optical
properties are dominated by excitonic effects, we show that exciton-exciton
interaction produces a breaking of the spin degeneracy in two-dimensional
semiconductors. In doped wells, the two spin components of an optically created
two-dimensional electron gas are well described by Fermi-Dirac distributions
with a common temperature but different chemical potentials. The rate of the
spin depolarization of the electron gas is found to be independent of the mean
electron kinetic energy but accelerated by thermal spreading of the carriers.Comment: 1 PDF file, 13 eps figures, Proceedings of the 1998 International
Workshop on Nanophysics and Electronics (NPE-98)- Lecce (Italy
Spin relaxation of excitons in strained InGaAs/GaAs quantum wells
We have investigated the exciton spin dynamics in strained InxGa1-x As/GaAs (x ≤ 0.2) quantum wells. The variation of the initial polarization with the excitation energy is well correlated with the increasing mixing of the valence band states. The time behavior of the depolarization curves clearly demonstrates the prime importance of the hole and exciton spin relaxation processes