On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon

We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.Engineering and Applied Science

Energetic Beam Processing of Silicon to Engineer Optoelectronically Active Defects

This thesis explores ways to use ion implantation and nanosecond pulsed laser melting, both energetic beam techniques, to engineer defects in silicon. These defects are chosen to facilitate the use of silicon in optoelectronic applications for which its indirect bandgap is not ideal. Chapter 2 develops a kinetic model for the use of point defects as luminescence centers for light-emitting diodes and demonstrates an experimental procedure capable of high-throughput screening of the electroluminescent properties of such defects. Chapter 3 discusses the dramatic change in optical absorption observed in silicon highly supersaturated (i.e., hyperdoped) with the chalcogens sulfur, selenium, and tellurium and reports the first measurements of the optical absorption of such materials for photon energies greater than the bandgap of silicon. Chapter 3 examines the use of silicon hyperdoped with chalcogens in light detectors and concludes that while these devices display strong internal gain that is coupled to a particular type of surface defect, hyperdoping with chalcogens does not lead directly to measurable sub-bandgap photoconductivity. Chapter 4 considers the potential for Silicon to serve as the active material in an intermediate-band solar cell and reports experimental progress on two proposed approaches for hyperdoping silicon for this application. The main results of this chapter are the use of native-oxide etching to control the surface evaporation rate of sulfur from silicon and the first synthesis of monocrystalline silicon hyperdoped with gold.Engineering and Applied Science

Interview avec Roland Recht

Professeur au Collège de France (2001-2012), membre de l’Institut – Académie des inscriptions et belles-lettres (2003) –, historien de l’art du Moyen Âge et historien de l’art tout court, Roland Recht me reçoit, ce jeudi 9 octobre, par un bel après-midi ensoleillé, dans l’appartement de fonction qu’il occupe à l’Institut, rue de Seine, en sa qualité de président de l’Académie des inscriptions et belles-lettres pour l’année civile 2014. Il accepte de s’entretenir avec moi sur son œuvre, autour..

Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin

Hyperdoping has emerged as a promising method for designing semiconductors with unique optical and electronic properties, although such properties currently lack a clear microscopic explanation. Combining computational and experimental evidence, we probe the origin of sub-band gap optical absorption and metallicity in Se-hyperdoped Si. We show that sub-band gap absorption arises from direct defect-to-conduction band transitions rather than free carrier absorption. Density functional theory predicts the Se-induced insulator-to-metal transition arises from merging of defect and conduction bands, at a concentration in excellent agreement with experiment. Quantum Monte Carlo calculations confirm the critical concentration, demonstrate that correlation is important to describing the transition accurately, and suggest that it is a classic impurity-driven Mott transition.Comment: 5 pages, 3 figures (PRL formatted

Enhancing the Infrared Photoresponse of Silicon by Controlling the Fermi Level Location within an Impurity Band

Strong absorption of sub-band gap radiation by an impurity band has recently been demonstrated in silicon supersaturated with chalcogen impurities. However, despite the enhanced absorption in this material, the transformation of infrared radiation into an electrical signal via extrinsic photoconductivity—the critical performance requirement for many optoelectronic applications—has only been reported at low temperature because thermal impurity ionization overwhelms photoionization at room temperature. Here, dopant compensation is used to manipulate the optical and electronic properties and thereby improve the room-temperature infrared photoresponse. Silicon co-doped with boron and sulfur is fabricated using ion implantation and nanosecond pulsed laser melting to achieve supersaturated sulfur concentrations and a matched boron distribution. The location of the Fermi level within the sulfur-induced impurity band is controlled by tuning the acceptor-to-donor ratio, and through this dopant compensation, three orders of magnitude improvement in infrared detection at 1550 nm is demonstrated.Engineering and Applied Science

Insulator-to-metal transition in sulfur-doped silicon

We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to a dopant known to produce only deep levels at equilibrium concentrations. Temperature-dependent conductivity and Hall effect measurements for temperatures T > 1.7 K both indicate that a transition from insulating to metallic conduction occurs at a sulfur concentration between 1.8 and 4.3 x 10^20 cm-3. Conduction in insulating samples is consistent with variable range hopping with a Coulomb gap. The capacity for deep states to effect metallic conduction by delocalization is the only known route to bulk intermediate band photovoltaics in silicon.Comment: Submission formatting; 4 journal pages equivalen

Robust efficiency and actuator saturation explain healthy heart rate control and variability

The correlation of healthy states with heart rate variability (HRV) using time series analyses is well documented. Whereas these studies note the accepted proximal role of autonomic nervous system balance in HRV patterns, the responsible deeper physiological, clinically relevant mechanisms have not been fully explained. Using mathematical tools from control theory, we combine mechanistic models of basic physiology with experimental exercise data from healthy human subjects to explain causal relationships among states of stress vs. health, HR control, and HRV, and more importantly, the physiologic requirements and constraints underlying these relationships. Nonlinear dynamics play an important explanatory role––most fundamentally in the actuator saturations arising from unavoidable tradeoffs in robust homeostasis and metabolic efficiency. These results are grounded in domain-specific mechanisms, tradeoffs, and constraints, but they also illustrate important, universal properties of complex systems. We show that the study of complex biological phenomena like HRV requires a framework which facilitates inclusion of diverse domain specifics (e.g., due to physiology, evolution, and measurement technology) in addition to general theories of efficiency, robustness, feedback, dynamics, and supporting mathematical tools