4,823 research outputs found

    Temperature-dependent reflectivity of silicon carbide

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    The spectral reflectivity of a commercial silicon carbide (SiC) ceramic surface was measured at wavelengths from 2.5 to 14.5 microns and at temperatures ranging from 358 to 520 K using a NASA-developed multiwavelength pyrometer. The SiC surface reflectivity was low at the short wavelengths, decreasing to almost zero at 10 microns, then increasing rapidly to a maximum at approximately 12.5 microns, and decreasing gradually thereafter. The reflectivity maximum increased in magnitude with increasing surface temperature. The wavelength and temperature dependence can be explained in terms of the classical dispersion theory of crystals and the Lorentz electron theory. Electronic transitions between the donor state and the conduction band states were responsible for the dispersion. The concentration of the donor state in SiC was determined to be approximately 4 x 10 exp 18 and its ionization energy was determined to be approximately 71 meV

    Multiwavelength pyrometry for nongray surfaces in the presence of interfering radiation

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    A NASA developed multiwavelength pyrometry technique for nongray surfaces was extended to also measure surface temperature in the presence of interfering radiation. This radiation is produced by heat lamps used to raise the temperature of the surface. The necessary instruments are a spectral radiometer, an auxiliary radiation source, and a computer. Four radiation spectra are recorded: (1) the unobstructed spectrum characterizing an auxiliary radiation source; (2) the unobstructed spectrum characterizing the interfering radiation; (3) the radiation spectrum consisting of surface emission plus the interfering radiation; and (4) a spectrum consisting of the radiations of (3) plus the reflected radiation due to the incidence of the auxiliary radiation source on this surface. With these spectra, application of two variable, nonlinear, least squares, curve fitting computer software determines the surface temperature and the spectral emissivity. Use of the method to measure the surface temperature of silicon carbide under a simulated interference condition is shown at a low temperature just above ambient. The instrumentation necessary to extend the method to elevated temperatures is discussed

    Non-contact heat flux measurement using a transparent sensor

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    A working non-contact heat flux sensor was demonstrated using a transparent material (sapphire) and a multiwavelength pyrometer. The pyrometer is used to measure the temperatures of the two surfaces of the sensor from the spectrum of radiation originating from them. The heat conducted through the material is determined from the temperature difference of the two surfaces and the thermal conductivity of the material. The measured heat flux is equal to the incident heat flux within experimental error indicating that no calibration would be necessary. A steady state heat flux of 100 kW/sq m was easily achieved
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