An improved single particle potential for transport model simulations of nuclear reactions induced by rare isotope beams

Taking into account more accurately the isospin dependence of nucleon-nucleon interactions in the in-medium many-body force term of the Gogny effective interaction, new expressions for the single nucleon potential and the symmetry energy are derived. Effects of both the spin(isospin) and the density dependence of nuclear effective interactions on the symmetry potential and the symmetry energy are examined. It is shown that they both play a crucial role in determining the symmetry potential and the symmetry energy at supra-saturation densities. The improved single nucleon potential will be useful for simulating more accurately nuclear reactions induced by rare isotope beams within transport models.Comment: 6 pages including 6 figures

On Spinors Transformations

We begin showing that for even dimensional vector spaces $V$ all automorphisms of their Clifford algebras are inner. So all orthogonal transformations of $V$ are restrictions to $V$ of inner automorphisms of the algebra. Thus under orthogonal transformations $P$ and $T$ - space and time reversal - all algebra elements, including vectors $v$ and spinors $\varphi$, transform as $v \to x v x^{-1}$ and $\varphi \to x \varphi x^{-1}$ for some algebra element $x$. We show that while under combined $PT$ spinor $\varphi \to x \varphi x^{-1}$ remain in its spinor space, under $P$ or $T$ separately $\varphi$ goes to a 'different' spinor space and may have opposite chirality. We conclude with a preliminary characterization of inner automorphisms with respect to their property to change, or not, spinor spaces.Comment: Minor changes to propositions 1 and

Direct Graphene Growth on Insulator

Fabrication of graphene devices is often hindered by incompatibility between the silicon technology and the methods of graphene growth. Exfoliation from graphite yields excellent films but is good mainly for research. Graphene grown on metal has a technological potential but requires mechanical transfer. Growth by SiC decomposition requires a temperature budget exceeding the technological limits. These issues could be circumvented by growing graphene directly on insulator, implying Van der Waals growth. During growth, the insulator acts as a support defining the growth plane. In the device, it insulates graphene from the Si substrate. We demonstrate planar growth of graphene on mica surface. This was achieved by molecular beam deposition above 600{\deg}C. High resolution Raman scans illustrate the effect of growth parameters and substrate topography on the film perfection. Ab initio calculations suggest a growth model. Data analysis highlights the competition between nucleation at surface steps and flat surface. As a proof of concept, we show the evidence of electric field effect in a transistor with a directly grown channel.Comment: 13 pages, 6 figure

The Dirac operator on SU_q(2)

We construct a 3^+ summable spectral triple (A(SU_q(2)),H,D) over the quantum group SU_q(2) which is equivariant with respect to a left and a right action of U_q(su(2)). The geometry is isospectral to the classical case since the spectrum of the operator D is the same as that of the usual Dirac operator on the 3-dimensional round sphere. The presence of an equivariant real structure J demands a modification in the axiomatic framework of spectral geometry, whereby the commutant and first-order properties need be satisfied only modulo infinitesimals of arbitrary high order.Comment: v2: minor changes; to appear in CM

Doping of graphene by a Au(111) substrate: Calculation strategy within the local density approximation and a semiempirical van der Waals approach

We have performed a density functional study of graphene adsorbed on Au(111) surface using both a local density approximation and a semiempirical van der Waals approach proposed by Grimme, known as the DFT-D2 method. Graphene physisorbed on metal has the linear dispersion preserved in the band-structure, but the Fermi level of the system is shifted with respect to the conical points which results in a doping effect. We show that the type and amount of doping depends not only on the choice of the exchange-correlation functional used in the calculations, but also on the supercell geometry that models the physical system. We analyzed how the factors such as the in-plane cell parameter and interlayer spacing in gold influence the Fermi level shift and we found that even a small variation in these parameters may cause a transition from p-type to n-type doping. We have selected a reasonable set of model parameters and obtained that graphene is either undoped or at most slightly p-type doped on the clean Au(111) surface, which seems to be in line with experimental findings. On the other hand, modifications of the substrate lattice may induce larger doping up to 0.30-0.40 eV depending on the graphene-metal adsorption distance. The sensitivity of the graphene-gold interface to the structural parameters may allow to tune doping across the samples which could lead to possible applications in graphene-based electronic devices. We believe that the present remarks can be also useful for other studies based on the periodic DFT

Tuning of magnetic and electronic states by control of oxygen content in lanthanum strontium cobaltites

We report on the magnetic, resistive, and structural studies of perovskite La$_{1/3}$Sr$_{2/3}$CoO$_{3-\delta}$. By using the relation of synthesis temperature and oxygen partial pressure to oxygen stoichiometry obtained from thermogravimetric analysis, we have synthesized a series of samples with precisely controlled $\delta=0.00-0.49$. These samples show three structural phases at $\delta=0.00-0.15$, $\approx0.25$, $\approx0.5$, and two-phase behavior for other oxygen contents. The stoichiometric material with $\delta=0.00$ is a cubic ferromagnetic metal with the Curie temperature $T_{\rm C}=274$ K. The increase of $\delta$ to 0.15 is followed by a linear decrease of $T_{\rm C}$ to $\approx$ 160 K and a metal-insulator transition near the boundary of the cubic structure range. Further increase of $\delta$ results in formation of a tetragonal $2a_p\times 2a_p \times 4a_p$ phase for $\delta\approx 0.25$ and a brownmillerite phase for $\delta\approx0.5$. At low temperatures, these are weak ferromagnetic insulators (canted antiferromagnets) with magnetic transitions at $T_{\rm m}\approx230$ and 120 K, respectively. At higher temperatures, the $2a_p\times 2a_p \times 4a_p$ phase is $G$-type antiferromagnetic between 230 K and $\approx$360 K. Low temperature magnetic properties of this system for $\delta<1/3$ can be described in terms of a mixture of Co$^{3+}$ ions in the low-spin state and Co$^{4+}$ ions in the intermediate-spin state and a possible spin transition of Co$^{3+}$ to the intermediate-spin state above $T_{\rm C}$. For $\delta>1/3$, there appears to be a combination of Co$^{2+}$ and Co$^{3+}$ ions, both in the high-spin state with dominating antiferromagnetic interactions.Comment: RevTeX, 9 pages, 7 figures, to be published in Physical Review

Determination of the X-ray reflection emissivity profile of 1H 0707-495

When considering the X-ray spectrum resulting from the reflection off the surface of accretion discs of AGN, it is necessary to account for the variation in reflected flux over the disc, i.e. the emissivity profile. This will depend on factors including the location and geometry of the X-ray source and the disc characteristics. We directly obtain the emissivity profile of the disc from the observed spectrum by considering the reflection component as the sum of contributions from successive radii in the disc and fitting to find the relative weightings of these components in a relativistically-broadened emission line. This method has successfully recovered known emissivity profiles from synthetic spectra and is applied to XMM-Newton spectra of the Narrow Line Seyfert 1 galaxy 1H 0707-495. The data imply a twice-broken power law form of the emissivity law with a steep profile in the inner regions of the disc (index 7.8) and then a flat region between 5.6rg and 34.8rg before tending to a constant index of 3.3 over the outer regions of the disc. The form of the observed emissivity profile is consistent with theoretical predictions, thus reinforcing the reflection interpretation.Comment: 9 pages, 10 figures. Accepted for publication in MNRA

Local index formula for SU_q(2)

We discuss the local index formula of Connes-Moscovici for the isospectral noncommutative geometry that we have recently constructed on quantum SU(2). We work out the cosphere bundle and the dimension spectrum as well as the local cyclic cocycles yielding the index formula.Comment: 18 pages. v2: minor changes; to appear in K-theor

Raman Response of Magnetic Excitations in Cuprate Ladders and Planes

An unified picture for the Raman response of magnetic excitations in cuprate spin-ladder compounds is obtained by comparing calculated two-triplon Raman line-shapes with those of the prototypical compounds SrCu2O3 (Sr123), Sr14Cu24O41 (Sr14), and La6Ca8Cu24O41 (La6Ca8). The theoretical model for the two-leg ladder contains Heisenberg exchange couplings J_parallel and J_perp plus an additional four-spin interaction J_cyc. Within this model Sr123 and Sr14 can be described by x:=J_parallel/J_perp=1.5, x_cyc:=J_cyc/J_perp=0.2, J_perp^Sr123=1130 cm^-1 and J_perp^Sr14=1080 cm^-1. The couplings found for La6Ca8 are x=1.2, x_cyc=0.2, and J_perp^La6Ca8=1130 cm^-1. The unexpected sharp two-triplon peak in the ladder materials compared to the undoped two-dimensional cuprates can be traced back to the anisotropy of the magnetic exchange in rung and leg direction. With the results obtained for the isotropic ladder we calculate the Raman line-shape of a two-dimensional square lattice using a toy model consisting of a vertical and a horizontal ladder. A direct comparison of these results with Raman experiments for the two-dimensional cuprates R2CuO4 (R=La,Nd), Sr2CuO2Cl2, and YBa2Cu3O(6+delta) yields a good agreement for the dominating two-triplon peak. We conclude that short range quantum fluctuations are dominating the magnetic Raman response in both, ladders and planes. We discuss possible scenarios responsible for the high-energy spectral weight of the Raman line-shape, i.e. phonons, the triple-resonance and multi-particle contributions.Comment: 10 pages, 6 figure

A Graphene-based Hot Electron Transistor

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.Comment: 18 pages, 6 figure