Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters

We characterise THz output of lateral photo-Dember (LPD) emitters based on semi-insulating (SI), unannealed and annealed low temperature grown (LTG) GaAs. Saturation of THz pulse power with optical fluence is observed, with unannealed LTG GaAs showing highest saturation fluence at 1.1 ± 0.1 mJ cm-2. SI-GaAs LPD emitters show a flip in signal polarity with optical fluence that is attributed to THz emission from the metal-semiconductor contact. Variation in optical polarisation affects THz pulse power that is attributed to a local optical excitation near the metal contact

Single mode terahertz quantum cascade amplifier

A terahertz (THz) optical amplifier based on a 2.9 THz quantum cascade laser (QCL) structure has been demonstrated. By depositing an antireflective coating on the QCL facet, the laser mirror losses are enhanced to fully suppress the lasing action, creating a THz quantum cascade (QC) amplifier. Terahertz radiation amplification has been obtained, by coupling a separate multi-mode THz QCL of the same active region design to the QC amplifier. A bare cavity gain is achieved and shows excellent agreement with the lasing spectrum from the original QCL without the antireflective coating. Furthermore, a maximum optical gain of ∼30 dB with single-mode radiation output is demonstrated

Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices

The interface magnetic and electronic properties of two Fe/III-V semiconductor systems, namely Fe/GaAs and Fe/InAs, grown at room temperature have been studied. A "magnetic interface", which is essential for the fabrication of magneto-electronic (ME) devices, was realized in both Fe/GaAs and Fe/InAs systems with suitable substrate processing and growth conditions. Furthermore, Fe/InAs was shown to have favorable interface electronic properties as Fe forms a low resistance ohmic contact on InAs. Two prototypes of ME device based on Fe/InAs are also discussed

Single mode terahertz quantum cascade amplifier

A terahertz (THz) optical amplifier based on a 2.9 THz quantum cascade laser (QCL) structure has been demonstrated. By depositing an antireflective coating on the QCL facet, the laser mirror losses are enhanced to fully suppress the lasing action, creating a THz quantum cascade (QC) amplifier. Terahertz radiation amplification has been obtained, by coupling a separate multi-mode THz QCL of the same active region design to the QC amplifier. A bare cavity gain is achieved and shows excellent agreement with the lasing spectrum from the original QCL without the antireflective coating. Furthermore, a maximum optical gain of ∼30 dB with single-mode radiation output is demonstrated

Double-layer-gate architecture for few-hole GaAs quantum dots

We report the fabrication of single and double hole quantum dots using a double-layer-gate design on an undoped accumulation mode AlxGa1-xAs/GaAs heterostructure. Electrical transport measurements of a single quantum dot show varying addition energies and clear excited states. In addition, the two-level-gate architecture can also be configured into a double quantum dot with tunable inter-dot coupling

Induced currents, frozen charges and the quantum Hall effect breakdown

Puzzling results obtained from torque magnetometry in the quantum Hall effect (QHE) regime are presented, and a theory is proposed for their explanation. Magnetic moment saturation, which is usually attributed to the QHE breakdown, is shown to be related to the charge redistribution across the sample.Comment: 5 pages, 2 figures, Proceedings of the 11th International Symposium "Nanostructures: Physics and Technology", St.Petersburg, Russia, June 23-28, 2003, expanded version with one figure adde

Experimental evidence of a metal-insulator transition in a half-filled Landau level

We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor $\nu =1/2$, where the system can be described by the composite fermion picture, we observe a crossover from metallic to insulating behaviour as the disorder is increased. Experimental results and theoretical prediction are compared.Comment: To be published in Solid State Communications. 4 figure

Metal-insulator transition at B=0 in an ultra-low density (rs=23r_{s}=23) two dimensional GaAs/AlGaAs hole gas

We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the hole gas is strongly metallic, with an exceptional mobility of $425,000 cm^{2}V^{-1}s^{-1}$. The low disorder and strength of the many-body interactions in this sample are highlighted by the observation of re-entrant metal insulator transitions in both the fractional ($\nu < 1/3$) and integer ($2 > \nu > 1$) quantum Hall regimes. On reducing the carrier density the temperature and electric field dependence of the resistivity show that the sample is still metallic at $p_{s}=1.3x10^{10} cm^{-2}$ ($r_{s}=21$), becoming insulating at $p_{s}{\simeq}1x10^{10} cm^{-2}$. Our results indicate that electron-electron interactions are dominant at these low densities, pointing to the many body origins of this metal-insulator transition. We note that the value of $r_{s}$ at the transition ($r_{s}=23 +/- 2$) is large enough to allow the formation of a weakly pinned Wigner crystal, and is approaching the value calculated for the condensation of a pure Wigner crystal.Comment: 4 pages, latex, 4 postscript figures, submitted to EP2DS-12 on 21st August 1997, to appear in Physica

Probing e-e interactions in a periodic array of GaAs quantum wires

We present the results of non-linear tunnelling spectroscopy between an array of independent quantum wires and an adjacent two-dimensional electron gas (2DEG) in a double-quantum-well structure. The two layers are separately contacted using a surface-gate scheme, and the wires are all very regular, with dimensions chosen carefully so that there is minimal modulation of the 2DEG by the gates defining the wires. We have mapped the dispersion spectrum of the 1D wires down to the depletion of the last 1D subband by measuring the conductance \emph{G} as a function of the in-plane magnetic field \emph{B}, the interlayer bias $V_{\rm dc}$ and the wire gate voltage. There is a strong suppression of tunnelling at zero bias, with temperature and dc-bias dependences consistent with power laws, as expected for a Tomonaga-Luttinger Liquid caused by electron-electron interactions in the wires. In addition, the current peaks fit the free-electron model quite well, but with just one 1D subband there is extra structure that may indicate interactions.Comment: 3 pages, 3 figures; formatting correcte