Korshunov instantons out of equilibrium

Zero-dimensional dissipative action possesses non-trivial minima known as Korshunov instantons. They have been known so far only for imaginary time representation that is limited to equilibrium systems. In this work we reconstruct and generalise Korshunov instantons using real-time Keldysh approach. This allows us to formulate the dissipative action theory for generic non-equilibrium conditions. Possible applications of the theory to transport in strongly biased quantum dots are discussed..Comment: 6 pages, 2 figure

Metallic proximity effect in ballistic graphene with resonant scatterers

We study the effect of resonant scatterers on the local density of states in a rectangular graphene setup with metallic leads. We find that the density of states in a vicinity of the Dirac point acquires a strong position dependence due to both metallic proximity effect and impurity scattering. This effect may prevent uniform gating of weakly-doped samples. We also demonstrate that even a single-atom impurity may essentially alter electronic states at low-doping on distances of the order of the sample size from the impurity.Comment: 9 pages, 2 figure

Ballistic charge transport in chiral-symmetric few-layer graphene

A transfer matrix approach to study ballistic charge transport in few-layer graphene with chiral-symmetric stacking configurations is developed. We demonstrate that the chiral symmetry justifies a non-Abelian gauge transformation at the spectral degeneracy point (zero energy). This transformation proves the equivalence of zero-energy transport properties of the multilayer to those of the system of uncoupled monolayers. Similar transformation can be applied in order to gauge away an arbitrary magnetic field, weak strain, and hopping disorder in the bulk of the sample. Finally, we calculate the full-counting statistics at arbitrary energy for different stacking configurations. The predicted gate-voltage dependence of conductance and noise can be measured in clean multilayer samples with generic metallic leads.Comment: 6 pages, 5 figures; EPL published versio

Diffusion and criticality in undoped graphene with resonant scatterers

A general theory is developed to describe graphene with arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the minimal conductivity of graphene with resonant scatterers. In the case of smooth resonant impurities conductivity grows logarithmically with increasing impurity concentration, in agreement with renormalization group analysis for the symmetry class DIII. For vacancies (or strong on-site potential impurities) the conductivity saturates at a constant value that depends on the vacancy distribution among two sublattices as expected for the symmetry class BDI.Comment: 4 pages, 2 figure

L\'evy flights due to anisotropic disorder in graphene

We study transport properties of graphene with anisotropically distributed on-site impurities (adatoms) that are randomly placed on every third line drawn along carbon bonds. We show that stripe states characterized by strongly suppressed back-scattering are formed in this model in the direction of the lines. The system reveals L\'evy-flight transport in stripe direction such that the corresponding conductivity increases as the square root of the system length. Thus, adding this type of disorder to clean graphene near the Dirac point strongly enhances the conductivity, which is in stark contrast with a fully random distribution of on-site impurities which leads to Anderson localization. The effect is demonstrated both by numerical simulations using the Kwant code and by an analytical theory based on the self-consistent $T$-matrix approximation.Comment: 11 pages, 6 figure

Conductance through the disclination dipole defect in metallic carbon nanotubes

The electronic transport properties of a metallic carbon nanotube with the five-seven disclination pair characterized by a lattice distortion vector are investigated. The influence of the disclination dipole includes induced curvature and mixing of two sublattices. Both these factors are taken into account via a self-consistent perturbation approach. The conductance and the Fano factor are calculated within the transfer-matrix technique. PACS: 73.63.Fg, 72.80.Rj, 72.10.F

Quantum Hall criticality and localization in graphene with short-range impurities at the Dirac point

We explore the longitudinal conductivity of graphene at the Dirac point in a strong magnetic field with two types of short-range scatterers: adatoms that mix the valleys and "scalar" impurities that do not mix them. A scattering theory for the Dirac equation is employed to express the conductance of a graphene sample as a function of impurity coordinates; an averaging over impurity positions is then performed numerically. The conductivity $\sigma$ is equal to the ballistic value $4e^2/\pi h$ for each disorder realization provided the number of flux quanta considerably exceeds the number of impurities. For weaker fields, the conductivity in the presence of scalar impurities scales to the quantum-Hall critical point with $\sigma \simeq 4 \times 0.4 e^2/h$ at half filling or to zero away from half filling due to the onset of Anderson localization. For adatoms, the localization behavior is obtained also at half filling due to splitting of the critical energy by intervalley scattering. Our results reveal a complex scaling flow governed by fixed points of different symmetry classes: remarkably, all key manifestations of Anderson localization and criticality in two dimensions are observed numerically in a single setup.Comment: 17 pages, 4 figure