Numerical Simulation of Steady Supersonic and Hypersonic Flows over Simple Bodies of Revolution. Aero Report 9902

This paper reports on numerical results for supersonic and hypersonic steady flows over axisymmetric blunt bodies. Two-dimensional compressible Navier- Stokes equations are solved using a high- resolution upwind Roe’s scheme. A modification to the boundary conditions and the implementation of Harten’s entropy fix is proposed to improve the robustness of the code, which is then tested on an axisymmetric spike, cone and cylinder at freestream Mach numbers of 2.21, 6.00 and 30.00

Numerical Simulation of High-Speed Unsteady Flows over Axisymmetric Spiked Bodies. Aero Report 9903

The present paper reports some preliminary numerical results for the supersonic/hypersonic unsteady flow over a family of spiked blunt bodies. Axisymmetric compressible Navier-Stokes equations are solved using a high- resolution unfactored implicit upwind Roe’s scheme and a time-accurate pseudo-time method is employed for advancing in time. Unsteady flow arising at Mach 2.21 and Mach 6.00 around the spiked 50°, 70° cone and cylinder are simulated and the computational results are compared with measurements. The study on these simple shapes for which experimental results are available provides a demonstration that such unsteady flows can be predicted reasonably well and provides confidence that more complex flows such as intake ’’buzz” and high Reynolds’ number ablation can be tackled

Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots

We report a magneto-optical study of InAs-InGaAs-GaAs self-assembled quantum dots (QDs) subjected to post-growth thermal annealing at different temperatures. At low temperatures annealing strongly affects the bimodal distribution of QDs; at higher temperatures a strong blueshift of the emission occurs. Magnetophotoluminescence reveals that the annealing increases the QD size, with a larger effect occurring along the growth axis, and decreases the carrier effective masses. The main contribution to the blueshift is deduced to be an increase in the average Ga composition of the QDs. The inadvertent annealing which occurs during the growth of the upper AlGaAs cladding layer in laser structures is also studied

Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPE

Non-polar a-plane gallium nitride (GaN) lms have been grown on r-plane (1102) sapphire by metal organic vapour phase epitaxy (MOVPE). A total of ve in-situ defect reduction techniques for a-plane GaN are compared, including two variants with a low temperature GaN nucleation layer (LTNL) and three variants without LTNL, in which the high- temperature growth of GaN is performed directly on the sapphire using various crystallite sizes. The material quality is investigated by photoluminescence (PL), x-ray di raction, cathodoluminescence, atomic force and optical microscopy. It is found that all layers are anisotropically strained with threading dislocation densities over 109 cm2. The PL spectrum is typically dominated by emission from basal plane stacking faults. Overall, growth techniques without LTNL do not yield any particular improvement and even result in the creation of new defects, ie. inversion domains, which are seldom observed if a low temperature GaN nucleation layer is used. The best growth method uses a LTNL combined with a single silicon nitride interlayer.This work is supported by the Engineering and Physical Sciences Research Council (United Kingdom) under EP/J003603/1 and EP/H0495331. The European Research Council has also provided nancial support under the European Community's Seventh Framework Programme (FP7/2007-2013) / ERC grant agreement no 279361 (MACONS).This is the final published version, also available from Elsevier at: http://dx.doi.org/10.1016/j.jcrysgro.2014.09.00

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

There is a great deal of interest in the underlying causes of efficiency droop in InGaN/GaN quantum well light emitting diodes, with several physical mechanisms being put forward to explain the phenomenon. In this paper we report on the observation of a reduction in the localisation induced S-shape temperature dependence of the peak photoluminescence energy with increasing excitation power density. This S-shape dependence is a key fingerprint of carrier localisation. Over the range of excitation power density where the depth of the S shape is reduced we also observe a reduction in the integrated photoluminescence intensity per unit excitation power, i.e. efficiency droop. Hence the onset of efficiency droop occurs at the same carrier density as the onset of carrier delocalisation. We correlate these experimental results with the predictions of a theoretical model of the effects of carrier localisation due to local variations in the concentration of the randomly distributed In atoms on the optical properties of InGaN/GaN quantum wells. On the basis of this comparison of theory with experiment we attribute the reduction in the Sshape temperature dependence to the saturation of the available localised states. We propose that this saturation of the localised states is a contributory factor to efficiency droop whereby non localised carriers recombine non-radiatively

Failures of Cognitive Control or Attention? The Case of Stop-Signal Deficits in Schizophrenia

We used Bayesian cognitive modelling to identify the underlying causes of apparent inhibitory deficits in the stop-signal paradigm. The analysis was applied to stop-signal data reported by Badcock et al. (Psychological Medicine 32: 87-297, 2002) and Hughes et al. (Biological Psychology 89: 220-231, 2012), where schizophrenia patients and control participants made rapid choice responses, but on some trials were signalled to stop their ongoing response. Previous research has assumed an inhibitory deficit in schizophrenia, because estimates of the mean time taken to react to the stop signal are longer in patients than controls. We showed that these longer estimates are partly due to failing to react to the stop signal (“trigger failures”) and partly due to a slower initiation of inhibition, implicating a failure of attention rather than a deficit in the inhibitory process itself. Correlations between the probability of trigger failures and event-related potentials reported by Hughes et al. are interpreted as supporting the attentional account of inhibitory deficits. Our results, and those of Matzke et al. (2016), who report that controls also display a substantial although lower trigger-failure rate, indicate that attentional factors need to be taken into account when interpreting results from the stop-signal paradigm