P-channel silicone gate FET

Modified fabrication technique for P-channel MOSFET devices eliminates problems involving gate placement and gate overlap. Technique provides self-aligned gate, eliminating complexity of mask aligning. Devices produced by this process are considerably faster than conventional MOSFET's and process increases yield

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

Progress in developing the application of ion implantation techniques to silicon gate CMOS/SOS processing is described. All of the conventional doping techniques such as in situ doping of the epi-film and diffusion by means of doped oxides are replaced by ion implantation. Various devices and process parameters are characterized to generate an optimum process by the use of an existing SOS test array. As a result, excellent circuit performance is achieved. A general description of the all ion implantation process is presented

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuits is described. A smooth metal surface was obtained by using the 2% Si-sputtered Al. More than 10% probe yield was achieved on solar cell controller circuit TCS136 (or MSFC-SC101). Reliability tests were performed on 15 arrays at 150 C. Only three arrays failed during the burn in, and 18 arrays out of 22 functioning arrays maintained the leakage current below 100 milli-A. Analysis indicates that this technology will be a viable process if the metal short circuit problem between the two metals can be reduced

Interplay of disorder and geometrical frustration in doped Gadolinium Gallium Garnet

The geometrically-frustrated, triangular antiferromagnet GGG exhibits a rich mix of short-range order and isolated quantum states. We investigate the effects of up to 1% Neodymium substitution for Gallium on the ac magnetic response at temperatures below 1 K in both the linear and nonlinear regimes. Substitutional disorder actually drives the system towards a more perfectly frustrated state, apparently compensating for the effect of imperfect Gadolinium/Gallium stoichiometry, while at the same time more closely demarcating the boundaries of isolated, coherent clusters composed of hundreds of spins. Optical measurements of the local Nd environment substantiate the picture of an increased frustration index with doping.Comment: 5 pages, 5 figure

Controlling quasiparticle excitations in a trapped Bose-Einstein condensate

We describe an approach to quantum control of the quasiparticle excitations in a trapped Bose-Einstein condensate based on adiabatic and diabatic changes in the trap anisotropy. We describe our approach in the context of Landau-Zener transition at the avoided crossings in the quasiparticle excitation spectrum. We show that there can be population oscillation between different modes at the specific aspect ratios of the trapping potential at which the mode energies are almost degenerate. These effects may have implications in the expansion of an excited condensate as well as the dynamics of a moving condensate in an atomic wave guide with a varying width

Bell inequality for pairs of particle-number-superselection-rule restricted states

Proposals for Bell inequality tests on systems restricted by superselection rules often require operations that are difficult to implement in practice. In this paper, we derive a new Bell inequality, where pairs of states are used to by-pass the superselection rule. In particular, we focus on mode entanglement of an arbitrary number of massive particles and show that our Bell inequality detects the entanglement in the pair when other inequalities fail. However, as the number of particles in the system increases, the violation of our Bell inequality decreases due to the restriction in the measurement space caused by the superselection rule. This Bell test can be implemented using techniques that are routinely used in current experiments.Comment: 9 pages, 6 figures; v2 is the published versio

Effects of pressure on the ferromagnetic state of the CDW compound SmNiC2

We report the pressure response of charge-density-wave (CDW) and ferromagnetic (FM) phases of the rare-earth intermetallic SmNiC2 up to 5.5 GPa. The CDW transition temperature (T_{CDW}), which is reflected as a sharp inflection in the electrical resistivity, is almost independent of pressure up to 2.18 GPa but is strongly enhanced at higher pressures, increasing from 155.7 K at 2.2 GPa to 279.3 K at 5.5 GPa. Commensurate with the sharp increase in T_{CDW}, the first-order FM phase transition, which decreases with applied pressure, bifurcates into the upper (T_{M1}) and lower (T_c) phase transitions and the lower transition changes its nature to second order above 2.18 GPa. Enhancement both in the residual resistivity and the Fermi-liquid T^2 coefficient A near 3.8 GPa suggests abundant magnetic quantum fluctuations that arise from the possible presence of a FM quantum critical point.Comment: 5 pages, 5 figure

Chemical Abundance Study of One Red Giant Star in NGC 5694 : A Globular Cluster with Dwarf Spheroidals' Chemical Signature?

We report the abundance analysis of one red giant branch star in the metal-poor outer halo globular cluster NGC 5694. We obtain [Fe/H] = -1.93, based on the ionized lines, and our metallicity measurement is in good agreement with previous estimates. We find that [Ca+Ti/2Fe] and [Cu/Fe] of NGC 5694 are about 0.3 -- 0.4 dex lower than other globular clusters with similar metallicities, but similar to some LMC clusters and stars in some dwarf spheroidal galaxies. Differences persist, however, in the abundances of neutron capture elements. The unique chemical abundance pattern and the large Galactocentric distance (30 kpc) and radial velocity (-138.6 +/- 1.0 km/sec) indicate that NGC 5694 had an extragalactic origin.Comment: ApJL accepte

Charge states and magnetic ordering in LaMnO3/SrTiO3 superlattices

We investigated the magnetic and optical properties of [(LaMnO3)n/(SrTiO3)8]20 (n = 1, 2, and 8) superlattices grown by pulsed laser deposition. We found a weak ferromagnetic and semiconducting state developed in all superlattices. An analysis of the optical conductivity showed that the LaMnO3 layers in the superlattices were slightly doped. The amount of doping was almost identical regardless of the LaMnO3 layer thickness up to eight unit cells, suggesting that the effect is not limited to the interface. On the other hand, the magnetic ordering became less stable as the LaMnO3 layer thickness decreased, probably due to a dimensional effect.Comment: 17 pages including 4 figures, accepted for publication in Phys. Rev.