RO1 Funding for Mixed Methods Research

Mixed methods research has made significant inroads in the effort to examine complex health-related phenomena. However, little has been published on the funding of mixed methods research projects. This article addresses that gap by presenting an example of a National Institute of Mental Health–funded project using a mixed methods qualitative–quantitative triangulation design titled “The Mixed-Method Analysis of Japanese Depression.” The authors present the Cultural Determinants of Health Seeking model that framed the study, the specific aims, the quantitative and qualitative data sources informing the study, and overview of the mixing of the two methods. Finally, the authors examine reviewers’ comments and the authors’ insights related to writing mixed methods proposals for successfully achieving RO1-level funding. </jats:p

Lateral diamond Schottky diodes on heteroepitaxial substrate

International audienceOne of the major reproach for diamond power device in comparison with other semiconductor materials is the substrate size. For example, for High Pressure High Temperature (HPHT) substrate used to create power devices, the size is currently 4x4mm2, which is far away from the silicon technology (wafer of 450mm). One way to overcome this issue is to use heteroepitaxial diamond substrates. Some similar works have already been done by different groups around the world [1], [2]. The French consortium DIAMWAFEL is actively working on diamond heteroepitaxial films grown onto Ir/SrTiO3/Si(001) substrates [3]. The crystalline quality reported for this heteroepitaxial material is at the state of the art [4]. Nevertheless, an electrical characterization is needed to check if this material is suitable for power device application. To do so, we firstly grew a slightly doped p-type layer (1016 atoms.cm-3) on the as received substrate to obtain an active layer on top of the thick intrinsic layer already grown. After that, Schottky and ohmic contacts have been deposited. The purpose of this study is to electrically characterize this new material by using the lateral Schottky diodes created. In that matter, we performed some current-voltage (I-V) measurements under different condition as well as capacity-voltage (C-V) ones an example is shown in figure 1 b). Those results will be presented and discussed in this work

Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes

International audienceAdvanced characterizations with combined analytical tools were carried out at the different stages of diamond heteroepitaxy on Ir/STO/Si (001) substrates. HRTEM and STEM-EELS revealed the presence of epitaxial nanometric diamond crystals after bias enhanced nucleation. UV Raman allowed estimating the diamond film quality and its strain at the early stages of heteroepitaxial growth. The crystalline structure and the strain within thick heteroepitaxial films were determined by XRD and CL investigations. A CL study of the cross-section provided the mapping of the dislocation network along the growth direction. Measurements performed on lateral Schottky diodes fabricated on a thick diamond film showed an excellent reproducibility on the substrate with a Schottky barrier height in good agreement with those obtained on homoepitaxial layers