Magnetoelectric properties of 500 nm Cr2O3 films

The linear magnetoelectric effect was measured in 500 nm Cr2O3 films grown by rf sputtering on Al2O3 substrates between top and bottom thin film Pt electrodes. Magnetoelectric susceptibility was measured directly by applying an AC electric field and measuring the induced AC magnetic moment using superconducting quantum interference device magnetometry. A linear dependence of the induced AC magnetic moment on the AC electric field amplitude was found. The temperature dependence of the magnetoelectric susceptibility agreed qualitatively and quantitatively with prior measurements of bulk single crystals, but the characteristic temperatures of the film were lower than those of single crystals. It was also possible to reverse the sign of the magnetoelectric susceptibility by reversing the sign of the magnetic field applied during cooling through the N\'eel temperature. A competition between total magnetoelectric and Zeeman energies is proposed to explain the difference between film and bulk Cr2O3 regarding the cooling field dependence of the magnetoelectric effect.Comment: accepted at Physical Review

Control of quantum interference in molecular junctions: Understanding the origin of Fano and anti- resonances

We investigate within a coarse-grained model the conditions leading to the appearance of Fano resonances or anti-resonances in the conductance spectrum of a generic molecular junction with a side group (T-junction). By introducing a simple graphical representation (parabolic diagram), we can easily visualize the relation between the different electronic parameters determining the regimes where Fano resonances or anti-resonances in the low-energy conductance spectrum can be expected. The results obtained within the coarse-grained model are validated using density-functional based quantum transport calculations in realistic T-shaped molecular junctions.Comment: 5 pages, 5 figure

Static magnetic order in metallic K0.49_{0.49}CoO2_{2}

By means of muon spin spectroscopy, we have found that K$_{0.49}$CoO$_2$ crystals undergo successive magnetic transitions from a high-T paramagnetic state to a magnetic ordered state below 60 K and then to a second ordered state below 16 K, even though K_{0.49}CoO_2 is metallic at least down to 4 K. An isotropic magnetic behavior and wide internal-field distributions suggest the formation of a commensurate helical spin density wave (SDW) state below 16 K, while a linear SDW state is likely to exist above 16 K. It was also found that K_{0.49}CoO_2 exhibits a further transition at 150 K presumably due to a change in the spin state of the Co ions. Since the T dependence of the internal-field below 60 K was similar to that for Na_{0.5}CoO_2, this suggests that magnetic order is more strongly affected by the Co valence than by the interlayer distance/interaction and/or the charge-ordering.Comment: 4 pages, 5 figures, accepted for publication in Phys. Rev. Let

RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance

The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetization, leading to the generation of an output RF voltage under a DC bias current. The dependences of the RF voltage gain on the static external magnetic field strength and angle were systematically investigated. The design principles for the enhancement of the gain factor are also discussed.Comment: 12 pages, 3 figure

Ac conductivity and dielectric properties of CuFe1−xCrxO2 : Mg delafossite

The electrical and dielectric properties of CuFe(1−x)Cr(x)O(2) (0 ≤ x ≤ 1) powders, doped with 3% of Mg and prepared by solid-state reaction, were studied by broadband dielectric spectroscopy in the temperature range from −100 to 150 °C. The frequency-dependent electrical and dielectric data have been discussed in the framework of a power law conductivity and complex impedance and dielectric modulus. At room temperature, the ac conductivity behaviour is characteristic of the charge transport in CuFe1−xCrxO2 powders. The substitution of Fe3+ by Cr3+ results in an increase in dc conductivity and a decrease in the Cu+–Cu+ distance. Dc conductivity, characteristic onset frequency and Havriliak–Negami characteristics relaxation times are thermally activated above −40 °C for x = 0.835. The associated activation energies obtained from dc and ac conductivity and from impedance and modulus losses are similar and show that CuFe1−xCrxO2 delafossite powders satisfy the BNN relation. Dc and ac conductivities have the same transport mechanism, namely thermally activated nearest neighbour hopping and tunnelling hopping above and below −40 °C, respectively

Some Cohomotopy Groups of Suspended Projective Planes

In this paper we compute some cohomotopy groups of the suspended complex and quaternionic projective plane by use of the exact sequence associated with the canonical cofiber sequence and a formula about a multiple of the identity class of the suspended projective plane.</p

Experimental evidence of stochastic resonance without tuning due to non Gaussian noises

In order to test theoretical predictions, we have studied the phenomenon of stochastic resonance in an electronic experimental system driven by white non Gaussian noise. In agreement with the theoretical predictions our main findings are: an enhancement of the sensibility of the system together with a remarkable widening of the response (robustness). This implies that even a single resonant unit can reach a marked reduction in the need of noise tuning.Comment: 4 pages, 3 figure