Negative terahertz conductivity in disordered graphene bilayers with population inversion

The gapless energy band spectra make the structures based on graphene and graphene bilayers with the population inversion created by optical or injection pumping to be promising media for the interband terahertz (THz) lasing. However, a strong intraband absorption at THz frequencies still poses a challenge for efficient THz lasing. In this paper, we show that in the pumped graphene bilayer structures, the indirect interband radiative transitions accompanied by scattering of carriers caused by disorder can provide a substantial negative contribution to the THz conductivity (together with the direct interband transitions). In the graphene bilayer structures on high-$\kappa$ substrates with point charged defects, these transitions almost fully compensate the losses due to the intraband (Drude) absorption. We also demonstrate that the indirect interband contribution to the THz conductivity in a graphene bilayer with the extended defects (such as the charged impurity clusters, surface corrugation, and nanoholes) can surpass by several times the fundamental limit associated with the direct interband transitions and the Drude conductivity. These predictions can affect the strategy of the graphene-based THz laser implementation.Comment: 5 pages, 4 figure

Ground-state properties of the one-dimensional electron liquid

We present calculations of the energy, pair-correlation function (PCF), static structure factor (SSF), and momentum density (MD) for the one-dimensional electron gas using the quantum Monte Carlo method. We are able to resolve peaks in the SSF at even-integer multiples of the Fermi wave vector, which grow as the coupling is increased. Our MD results show an increase in the effective Fermi wave vector as the interaction strength is raised in the paramagnetic harmonic wire; this appears to be a result of the vanishing difference between the wave functions of the paramagnetic and ferromagnetic systems. We have extracted the Luttinger liquid exponent from our MDs by fitting to data around kF, finding good agreement between the exponent of the ferromagnetic infinitely thin wire and the ferromagnetic harmonic wire

Coherence Length of Excitons in a Semiconductor Quantum Well

We report on the first experimental determination of the coherence length of excitons in semiconductors using the combination of spatially resolved photoluminescence with phonon sideband spectroscopy. The coherence length of excitons in ZnSe quantum wells is determined to be 300 ~ 400 nm, about 25 ~ 30 times the exciton de Broglie wavelength. With increasing exciton kinetic energy, the coherence length decreases slowly. The discrepancy between the coherence lengths measured and calculated by only considering the acoustic phonon scattering suggests an important influence of static disorder.Comment: 4 Pages, 4 figure

Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures

We consider the effect of terahertz (THz) radiation on the conductivity of the ungated and gated graphene (G)-phosphorene (P) hybrid structures and propose and evaluated the hot-carrier uncooled bolometric photodetectors based on the GP-lateral diodes (GP-LDs) and GP-field-effect transistors (GP-FETs) with the GP channel. The operation of the GP-LDs and GP-FET photodetectors is associated with the carrier heating by the incident radiation absorbed in the G-layer due to the intraband transitions. The carrier heating leads to the relocation of a significant fraction of the carriers into the P-layer. Due to a relatively low mobility of the carriers in the P-layer, their main role is associated with a substantial reinforcement of the scattering of the carriers. The GP-FET bolometric photodetector characteristics are effectively controlled by the gate voltage. A strong negative conductivity of the GP-channel can provide much higher responsivity of the THz hot-carriers GP-LD and GP-FET bolometric photodetectors in comparison with the bolometers with solely the G-channels.Comment: 12 pages, 5 figure

Electronic states in heterostructures formed by ultranarrow layers

Low-energy electronic states in heterosrtuctures formed by ultranarrow layer (single or several monolayers thickness) are studied theoretically. The host material is described within the effective mass approximation and effect of ultranarrow layers is taken into account within the framework of the transfer matrix approach. Using the current conservation requirement and the inversion symmetry of ultranarrow layer, the transfer matrix is written through two phenomenological parameters. The binding energy of localized state, the reflection (transmission) coefficient for the single ultranarrow layer case, and the energy spectrum of superlattice are determined by these parameters. Spectral dependency of absorption in superlattice due to photoexcitation of electrons from localized states into minibands is strongly dependent on the ultranarrow layers characteristics. Such a dependency can be used for verification of the transfer matrix parameters.Comment: 7 pages, 7 figure

Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection

We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the another contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the two-dimensional plasmons in relatively dense networks of randomly oriented CNTs (CNT "felt") and predicts the detector responsivity spectral characteristics. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. We demonstrate that the excitation of the two-dimensional plasmons by incoming THz radiation the detector responsivity can induce sharp resonant peaks of the detector responsivity at the signal frequencies corresponding to the plasmonic resonances. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.Comment: 15 pages, 9 figure

The role of whole brain radiation therapy in the management of melanoma brain metastases

Background: Brain metastases are common in patients with melanoma, and optimal management is not well defined. As melanoma has traditionally been thought of as “radioresistant,” the role of whole brain radiation therapy (WBRT) in particular is unclear. We conducted this retrospective study to identify prognostic factors for patients treated with stereotactic radiosurgery (SRS) for melanoma brain metastases and to investigate the role of additional up-front treatment with whole brain radiation therapy (WBRT). Methods: We reviewed records of 147 patients who received SRS as part of initial management of their melanoma brain metastases from January 2000 through June 2010. Overall survival (OS) and time to distant intracranial progression were calculated using the Kaplan-Meier method. Prognostic factors were evaluated using the Cox proportional hazards model. Results: WBRT was employed with SRS in 27% of patients and as salvage in an additional 22%. Age at SRS > 60 years (hazard ratio [HR] 0.64, p = 0.05), multiple brain metastases (HR 1.90, p = 0.008), and omission of up-front WBRT (HR 2.24, p = 0.005) were associated with distant intracranial progression on multivariate analysis. Extensive extracranial metastases (HR 1.86, p = 0.0006), Karnofsky Performance Status (KPS) ≤ 80% (HR 1.58, p = 0.01), and multiple brain metastases (HR 1.40, p = 0.06) were associated with worse OS on univariate analysis. Extensive extracranial metastases (HR 1.78, p = 0.001) and KPS (HR 1.52, p = 0.02) remained significantly associated with OS on multivariate analysis. In patients with absent or stable extracranial disease, multiple brain metastases were associated with worse OS (multivariate HR 5.89, p = 0.004), and there was a trend toward an association with worse OS when up-front WBRT was omitted (multivariate HR 2.56, p = 0.08). Conclusions: Multiple brain metastases and omission of up-front WBRT (particularly in combination) are associated with distant intracranial progression. Improvement in intracranial disease control may be especially important in the subset of patients with absent or stable extracranial disease, where the competing risk of death from extracranial disease is low. These results are hypothesis generating and require confirmation from ongoing randomized trials

Tunneling of a Quantized Vortex: Roles of Pinning and Dissipation

We have performed a theoretical study of the effects of pinning potential and dissipation on vortex tunneling in superconductors. Analytical results are obtained in various limits relevant to experiment. In general we have found that pinning and dissipation tend to suppress the effect of the vortex velocity dependent part of the Magnus force on vortex tunneling.Comment: Latex, 12 page