Electrodeposition of In2S3 buffer layer for Cu(In,Ga)Se2 solar cells

AbstractThe electrochemical deposition of In2S3 thin films was carried out from an aqueous solution of InCl3 and Na2S2O3. The effect of the potential of deposition was studied on the cell parameters of CIGSe based solar cells. The obtained films depending on the deposition potential and thickness exhibited complete substrate coverage or nanocolumnar layers. XPS measurements detected the presence of indium sulphide and hydroxide depending on the deposition parameters. Maximum photoelectric conversion efficiency of 10.2% was obtained, limited mainly by a low fill factor (56%). Further process optimization is expected to lead to efficiencies comparable to CdS buffer layers

Preparation of Cu(In,Ga)Se2 photovoltaic absorbers by an aqueous metal selenite co-precipitation route

In this paper, we report a novel and simple solution-based approach for the fabrication of chalcopyrite Cu(In,Ga)Se2 thin film solar cells. An aqueous co-precipitation method based on metal selenites, M2(SeO3)x (M = Cu, In, Ga) precursors was investigated. The resulting powder, dispersed in a binder to form an ink, was coated on a substrate by doctor blade technique. A soft annealing treatment allowed the reduction of metal selenites into selenides. Further rapid thermal processing (RTP) achieved crystalline chalcopyrite absorber. The obtained layer provides good compositional control and adequate morphology for solar cell applications. The water-based synthesis is a sustainable and simple procedure, and together with doctor blade printing, provides a potential cost-effective advantage over conventional fabrication processes (vacuum-based deposition techniques). The short circuit current (JSC), open circuit voltage (VOC), fill factor (FF), and total area power conversion efficiency (Eff.) of the device are 26 mA/cm2, 450 mV, 62%, and 7.2%, respectively. The effective band gap of 1.12 eV confirmed Ga-incorporation in the CIGS crystal lattice.This work was supported by the Spanish Ministry of Science and Competiveness under INNPACTO Program (IPT-2011-0913- 920000). The authors would like to thanks to Manuel Ocana Jurado ~ (ICMS-CISC) for his help in the XPS measurements. L. Oliveira would like to thank the support of the National Council for Scientific and Technological Development (CNPq) e Brazil

Cu(In,Ga)Se 2 mesa microdiodes: study of edge recombination and behaviour under concentrated sunlight

ABSTRACT In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach is applied on Cu(In,Ga)Se2 thin film devices. For this purpose, Cu(In,Ga)Se2 microcells with a mesa design are fabricated. The influence of the edge recombination signal is analyzed. It is found that with an appropriate etching procedure, devices as small as 50x50 µm do not experience edge recombination efficiency limitations. Under concentration, significant Voc gains are seen, leading to an absolute efficiency increase of two points per decade

Electrochemical integration of graphene with light absorbing copper-based thin films

We present an electrochemical route for the integration of graphene with light sensitive copper-based alloys used in optoelectronic applications. Graphene grown using chemical vapor deposition (CVD) transferred to glass is found to be a robust substrate on which photoconductive Cu_{x}S films of 1-2 um thickness can be deposited. The effect of growth parameters on the morphology and photoconductivity of Cu_{x}S films is presented. Current-voltage characterization and photoconductivity decay experiments are performed with graphene as one contact and silver epoxy as the other

Optimisation of CdTe electrodeposition voltage for development of CdS/CdTe solar cells

Cadmium telluride (CdTe) thin films have been deposited on glass/conducting glass (FTO) substrates using low-cost two electrode system and aqueous electrodeposition method. The glass/FTO substrates were used to grow the CdTe layers at different deposition voltages. The structural, electrical, optical and morphological properties of the resulting films have been characterized using X-ray diffraction (XRD), Photoelectrochemical (PEC) cell measurements, optical absorption spectroscopy and Scanning Electron Microscopy (SEM). The XRD results indicate that at voltages less than or higher than 1.576 V, crystallinity is poor due to presence of two phases. When CdTe is grown at 1.576 V, the composition is stoichiometric, and the (111) peak has the highest intensity in the XRD diffractogram indicating a high degree of crystallinity. SEM studies showed that all layers had pin-holes and gaps between the grains. These openings seem to be more common in the samples grown at voltages away from the stoichiometric voltage (1.576 V). The linear I–V curves of glass/FTO/CdS/CdTe/Au structures fabricated using stoichiometric CdTe showed efficiency of 10.1 % under AM 1.5 illuminatio

Innovation highway Breakthrough milestones amp; key developments in chalcopyrite photovoltaics from a retrospective viewpoint

The present contribution is a summary of an event that was organized as a special evening session in Symposium V Chalcogenide Thin Film Solar Cells at the E MRS 2016 Spring Meeting, Lille, France. The presentations in this session were given by the coauthors of this paper. These authors present retrospectives of key developments in the amp; 64257;eld of Cu In,Ga S,Se 2 solar cells as they themselves had witnessed in their laboratories or companies. Also, anecdotes are brought up, which captured interesting circumstances in that evolutionary phase of the amp; 64257;eld. Be cause the focus was on historical perspectives rather than a comprehensive review of the amp; 64257;eld, recent develop ments intentionally were not addresse

Electro-plating and characterisation of cadmium sulphide thin films using ammonium thiosulphate as the sulphur source

Cadmium sulphide (CdS) thin films have been successfully prepared from an aqueous electrolyte bath containing CdCl2 and ammonium thiosulphate ((NH4)2S2O3) using electrodeposition technique. The structural, compositional, optical, morphological and electrical properties of these thin films have been characterized using X-ray diffraction (XRD), Raman spectroscopy, energy dispersive X-ray spectroscopy, UV–Vis spectrophotometry, scanning electron microscopy (SEM), atomic force microscopy (AFM), photoelectrochemical cell and D.C. current–voltage (I–V) measurements. The optimum deposition cathodic potential has been observed at 1,455 mV, in a 2-electrode system with respect to carbon anode. Structural analysis using XRD shows a mixture of hexagonal and cubic phases in the as-deposited CdS samples and a phase transformation to the hexagonal structure occurred after heat treatment at 400 °C for 20 min. Optical studies demonstrate an improvement in the band edge, producing 2.42 eV for the band gap of the films after heat treatment. The heat treated CdS thin films show better transmission for wavelengths longer than 500 nm. SEM and AFM show that the heat-treated samples are more uniform, smoother and have larger grain size. Electrical studies confirm that the CdS thin films have n-type electrical conductivity and heat treated CdS thin films have resistivities of the order of 105 Ω cm

Face-selective electrostatic control of hydrothermal zinc oxide nanowire synthesis

Rational control over the morphology and the functional properties of inorganic nanostructures has been a long-standing goal in the development of bottom-up device fabrication processes. We report that the geometry of hydrothermally grown zinc oxide nanowires can be tuned from platelets to needles, covering more than three orders of magnitude in aspect ratio (~0.1–100). We introduce a classical thermodynamics-based model to explain the underlying growth inhibition mechanism by means of the competitive and face-selective electrostatic adsorption of non-zinc complex ions at alkaline conditions. The performance of these nanowires rivals that of vapour-phase-grown nanostructures and their low-temperature synthesis (<60 °C) is favourable to the integration and in situ fabrication of complex and polymer-supported devices. We illustrate this capability by fabricating an all-inorganic light-emitting diode in a polymeric microfluidic manifold. Our findings indicate that electrostatic interactions in aqueous crystal growth may be systematically manipulated to synthesize nanostructures and devices with enhanced structural control.National Science Foundation (U.S.) (MIT Center for Bits and Atoms (NSF CCR0122419))Massachusetts Institute of Technology. Media LaboratoryKorea Foundation for Advanced StudiesSamsung Electronics Co. (research internship)Harvard University. Society of FellowsWallace H. Coulter Foundation (Early Career Award)Brain & Behavior Research Foundation (Young Investigator Award)National Science Foundation (U.S.)National Institutes of Health (U.S.) (Director’s New Innovator Award