Correlated multiplexity and connectivity of multiplex random networks

Nodes in a complex networked system often engage in more than one type of interactions among them; they form a multiplex network with multiple types of links. In real-world complex systems, a node's degree for one type of links and that for the other are not randomly distributed but correlated, which we term correlated multiplexity. In this paper we study a simple model of multiplex random networks and demonstrate that the correlated multiplexity can drastically affect the properties of giant component in the network. Specifically, when the degrees of a node for different interactions in a duplex Erdos-Renyi network are maximally correlated, the network contains the giant component for any nonzero link densities. In contrast, when the degrees of a node are maximally anti-correlated, the emergence of giant component is significantly delayed, yet the entire network becomes connected into a single component at a finite link density. We also discuss the mixing patterns and the cases with imperfect correlated multiplexity.Comment: Revised version, 12 pages, 6 figure

Modification of surface-state dispersion upon Xe adsorption: A scanning tunneling microscope study

The modification of the surface electronic structure by an adsorbate is measured quantitatively with scanning tunneling microscopy and spectroscopy for the first time. The standing wave of the Cu surface-state electrons is utilized to probe the subtle change in the electronic structure on the Xe-covered Cu(111). The observed Fermi wavelength on the Xe-covered surface is longer by 15% than on the bare Cu surface. The change upon Xe adsorption is explained with the observed modified dispersion of the Cu surface state; upward shift by (130±20) meV with almost same effective mass

Local electronic density of states of a semiconducting carbon nanotube interface

The local electronic structure of semiconducting single-wall carbon nanotubes was studied with scanning tunneling microscopy. We performed scanning tunneling spectroscopy measurement at selected locations on the center axis of carbon nanotubes, acquiring a map of the electronic density of states. Spatial oscillation was observed in the electronic density of states with the period of atomic lattice. Defect induced interface states were found at the junctions of the two semiconducting nanotubes, which are well-understood in analogy with the interface states of bulk semiconductor heterostructures. The electronic leak of the van Hove singularity peaks was observed across the junction, due to inefficient charge screening in a one-dimensional structure.open111

Multilayer distortion in the reconstructed (110) surface of Au

A new LEED intensity analysis of the reconstructed Au(110)-(1×2) surface results in a modification of the missing row model with considerable distortions which are at least three layers deep. The top layer spacing is contracted by about 20%, the second layer exhibits a lateral pairing displacement of 0.07 Å and the third layer is buckled by 0.24 Å. Distortions in deeper layers seem to be probable but have not been considered in this analysis. The inter-atomic distances in the distorted surface region show both an expansion and a contraction compared to the bulk value and range from 5% contraction to about 4% expansion

Characteristic adsorption of Xe on a Si(111)-(7×7) surface at low temperature

Site-dependent adsorption structures of Xe atoms on a Si(111)-7×7 surface were studied by scanning tunneling microscopy at 8 K. Xe atoms initially adsorb as dimers on the site between a rest atom and its two neighboring center adatoms, and then near the corner adatom site. Similar structures were formed at both the faulted half (FH) and the unfaulted half (UH) of the 7×7 unit. The observed structure is in excellent agreement with that estimated by the rigid ball model, however, site-dependent bias dependence and different stabilities were observed for them, indicating the existence of different interactions between Xe and Si atoms in the 7×7 unit despite the stable electronic structure of Xe. Based on the results with thermal desorption spectroscopy, the adsorption energies are estimated to be 200 and 220 meV for FH and UH units, respectively