Structure and properties of a novel fulleride Sm6C60

A novel fulleride Sm6C60 has been synthesized using high temperature solid state reaction. The Rietveld refinement on high resolution synchrotron X-ray powder diffraction data shows that Sm6C60 is isostructural with body-centered cubic A6C60 (A=K, Ba). Raman spectrum of Sm6C60 is similar to that of Ba6C60, and the frequencies of two Ag modes in Sm6C60 are nearly the same as that of Ba6C60, suggesting that Sm is divalent and hybridization between C60 molecules and the Sm atom could exist in Sm6C60. Resistivity measurement shows a weak T-linear behavior above 180 K, the transport at low temperature is mainly dominated by granular-metal theory.Comment: 9 pages, 3 figures, submitted to Phys. Rev. B (March 12, 1999

Critical Exponents of a Four-State Potts Chemisorbed Overlayer: p(2x2) Oxygen on Ni(111)

We report the first determination of critical exponents for a chemisorbed overlayer, using low-energy electron diffraction. We examine the order-disorder transition of p(2x2) oxygen on the (111) surface of nickel. This study is the first of critical behavior of a two-dimensional system in the four-state Potts universality class. Discussion of disparity between our results and predicted exponents considers several possibilities, including logarithmic corrections.https://doi.org/10.1103/PhysRevLett.46.146

Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60

We have studied crystal structure, magnetism and electric transport properties of a europium fulleride Eu6C60 and its Sr-substituted compounds, Eu6-xSrxC60. They have a bcc structure, which is an isostructure of other M6C60 (M represents an alkali atom or an alkaline earth atom). Magnetic measurements revealed that magnetic moment is ascribed to the divalent europium atom with S = 7/2 spin, and a ferromagnetic transition was observed at TC = 10 - 14 K. In Eu6C60, we also confirm the ferromagnetic transition by heat capacity measurement. The striking feature in Eu6-xSrxC60} is very large negative magnetoresistance at low temperature; the resistivity ratio \rho(H = 9 T)/\rho(H = 0 T) reaches almost 10^{-3} at 1 K in Eu6C60. Such large magnetoresistance is the manifestation of a strong pi-f interaction between conduction carriers on C60 and 4f electrons of Eu.Comment: 5 pages, 4 figure

Raman Scattering Study of Ba-doped C60 with t1g States

Raman spectra are reported for Ba doped fullerides, BaxC60(x=3,4,and 6). The lowest frequency Hg modes split into five components for Ba4C60 and Ba6C60 even at room temperature, allowing us a quantitative analysis based on the electron-phonon couping theory. For the superconducting Ba4C60, the density of states at the Fermi energy was derived as 7 eV-1, while the total value of electron-phonon coupling \lambda was found to be 1.0, which is comparable to that of K3C60. The tangential Ag(2) mode, which is known as a sensitive probe for the degree of charge transfer on C60 molecule, shows a remarkable shift depending on the Ba concentration, being roughly consistent with the full charge transfer from Ba to C60. An effect of hybridization between Ba and C60 \pi orbitals is also discussed.Comment: 15 pages, 6 figures submitted to Phys. Rev. B (December 1,1998

Synthesis of CdS and CdSe nanocrystallites using a novel single-molecule precursors approach

The synthesis of CdS and CdSe nanocrystallites using the thermolysis of several dithioor diselenocarbamato complexes of cadmium in trioctylphosphine oxide (TOPO) is reported. The nanodispersed materials obtained show quantum size effects in their optical spectra and exhibit near band-edge luminescence. The influence of experimental parameters on the properties of the nanocrystallites is discussed. HRTEM images of these materials show well-defined, crystalline nanosized particles. Standard size fractionation procedures can be performed in order to narrow the size dispersion of the samples. The TOPO-capped CdS and CdSe nanocrystallites and simple organic bridging ligands, such as 2,2¢-bipyrimidine, are used as the starting materials for the preparation of novel nanocomposites. The optical properties shown by these new nanocomposites are compared with those of the starting nanodispersed materials

Superconductivity in Fullerides

Experimental studies of superconductivity properties of fullerides are briefly reviewed. Theoretical calculations of the electron-phonon coupling, in particular for the intramolecular phonons, are discussed extensively. The calculations are compared with coupling constants deduced from a number of different experimental techniques. It is discussed why the A_3 C_60 are not Mott-Hubbard insulators, in spite of the large Coulomb interaction. Estimates of the Coulomb pseudopotential $\mu^*$, describing the effect of the Coulomb repulsion on the superconductivity, as well as possible electronic mechanisms for the superconductivity are reviewed. The calculation of various properties within the Migdal-Eliashberg theory and attempts to go beyond this theory are described.Comment: 33 pages, latex2e, revtex using rmp style, 15 figures, submitted to Review of Modern Physics, more information at http://radix2.mpi-stuttgart.mpg.de/fullerene/fullerene.htm

Treatment of post-cholecystectomy biliary strictures with fully-covered self-expanding metal stents - results after 5 years of follow-up

BACKGROUND: Endoscopic treatment of post-cholecystectomy biliary strictures (PCBS) with multiple plastic biliary stents placed sequentially is a minimally invasive alternative to surgery but requires multiple interventions. Temporary placement of a single fully-covered self-expanding metal stent (FCSEMS) may offer safe and effective treatment with fewer re-interventions. Long-term effectiveness of treatment with FCSEMS to obtain PCBS resolution has not yet been studied. METHODS: In this prospective multi-national study in patients with symptomatic benign biliary strictures (N = 187) due to various etiologies received a FCSEMS with scheduled removal at 6-12 months and were followed for 5 years. We report here long-term outcomes of the subgroup of patients with PCBS (N = 18). Kaplan Meier analyses assessed long-term freedom from re-stenting. Adverse events were documented. RESULTS: Endoscopic removal of the FCSEMS was achieved in 83.3% (15/18) of patients after median indwell of 10.9 (range 0.9-13.8) months. In the remaining 3 patients (16.7%), the FCSEMS spontaneously migrated and passed without complications. At the end of FCSEMS indwell, 72% (13/18) of patients had stricture resolution. At 5 years after FCSEMS removal, 84.6% (95% CI 65.0-100.0%) of patients who had stricture resolution at FCSEMS removal remained stent-free. In addition, at 75 months after FCSEMS placement, the probability of remaining stent-free was 61.1% (95% CI 38.6-83.6%) for all patients. Stent or removal related serious adverse events occurred in 38.9% (7/18) all resolved without sequalae. CONCLUSIONS: In patients with symptomatic PCBS, temporary placement of a single FCSEMS intended for 10-12 months indwell is associated with long-term stricture resolution up to 5 years. Temporary placement of a single FCSEMS may be considered for patients with PCBS not involving the main hepatic confluence. TRIAL REGISTRATION NUMBERS: NCT01014390; CTRI/2012/12/003166; Registered 17 November 2009

Heteroepitaxy of La2O3La_2O_3 and La2−xYxO3La_{2-x}Y_xO_3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density

GaAs metal–oxide–semiconductor devices historically suffer from Fermi-level pinning, which is mainly due to the high trap density of states at the oxide/GaAs interface. In this work, we present a new way of passivating the interface trap states by growing an epitaxial layer of high-k dielectric oxide, $La_{2–x}Y_xO_3$, on GaAs(111)A. High-quality epitaxial $La_{2–x}Y_xO_3$ thin films are achieved by an ex situ atomic layer deposition (ALD) process, and GaAs MOS capacitors made from this epitaxial structure show very good interface quality with small frequency dispersion and low interface trap densities $(D_{it})$. In particular, the $La_2O_3$/GaAs interface, which has a lattice mismatch of only 0.04%, shows very low $D_{it}$ in the GaAs bandgap, below $3 × 10^{11} cm^{–2} eV^{–1}$ near the conduction band edge. The $La_2O_3$/GaAs capacitors also show the lowest frequency dispersion of any dielectric on GaAs. This is the first achievement of such low trap densities for oxides on GaAs.Chemistry and Chemical Biolog