Optoelectronic control of spin dynamics at near-THz frequencies in magnetically doped quantum wells

We use time-resolved Kerr rotation to demonstrate the optical and electronic tuning of both the electronic and local moment (Mn) spin dynamics in electrically gated parabolic quantum wells derived from II-VI diluted magnetic semiconductors. By changing either the electrical bias or the laser energy, the electron spin precession frequency is varied from 0.1 to 0.8 THz at a magnetic field of 3 T and at a temperature of 5 K. The corresponding range of the electrically-tuned effective electron g-factor is an order of magnitude larger compared with similar nonmagnetic III-V parabolic quantum wells. Additionally, we demonstrate that such structures allow electrical modulation of local moment dynamics in the solid state, which is manifested as changes in the amplitude and lifetime of the Mn spin precession signal under electrical bias. The large variation of electron and Mn-ion spin dynamics is explained by changes in magnitude of the sp−d exchange overlap.Comment: 4 pages, 3 figure

Entanglement versus Correlations in Spin Systems

We consider pure quantum states of $N\gg 1$ spins or qubits and study the average entanglement that can be \emph{localized} between two separated spins by performing local measurements on the other individual spins. We show that all classical correlation functions provide lower bounds to this \emph{localizable entanglement}, which follows from the observation that classical correlations can always be increased by doing appropriate local measurements on the other qubits. We analyze the localizable entanglement in familiar spin systems and illustrate the results on the hand of the Ising spin model, in which we observe characteristic features for a quantum phase transition such as a diverging entanglement length.Comment: 4 page

Discrete Fourier Transform in Nanostructures using Scattering

In this paper we show that the discrete Fourier transform can be performed by scattering a coherent particle or laser beam off a two-dimensional potential that has the shape of rings or peaks. After encoding the initial vector into the two-dimensional potential, the Fourier-transformed vector can be read out by detectors surrounding the potential. The wavelength of the laser beam determines the necessary accuracy of the 2D potential, which makes our method very fault-tolerant.Comment: 6 pages, 5 EPS figures, REVTe

Electron spin interferometry using a semiconductor ring structure

A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive transport regime. Optical pumping with circularly polarized light on one arm establishes dynamic nuclear polarization which acts as a local effective magnetic field on electron spins due to the hyperfine interaction. This local field causes one spin packet to precess faster than the other, thereby controlling the spin interference when the two packets are combined.Comment: 4 pages, 2 figure

Drift and Diffusion of Spins Generated by the Spin Hall Effect

Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a magnetic field. Spatially-resolved imaging reveals that spin accumulation observed in transverse arms develops due to longitudinal drift of spin polarization produced at the sample boundaries. One- and two-dimensional drift-diffusion modeling is used to explain these features, providing a more complete understanding of observations of spin accumulation and the spin Hall effect.Comment: 9 pages, 3 figure