An improved reconstruction procedure for the correction of local magnification effects in three-dimensional atom-probe

A new 3DAP reconstruction procedure is proposed that accounts for the evaporation field of a secondary phase. It applies the existing cluster selection software to identify the atoms of the second phase and, subsequently, an iterative algorithm to homogenise the volume laterally. This Procedure, easily implementable on existing reconstruction software, has been applied successfully on simulated and real 3DAP analyses

Comment on "Atomic Scale Structure and Chemical Composition across Order-Disorder Interfaces"

Interfaces have long been known to be the key to many mechanical and electric properties. To nickel base superalloys which have perfect creep and fatigue properties and have been widely used as materials of turbine blades, interfaces determine the strengthening capacities in high temperature. By means of high resolution scanning transmission electron microscopy (HRSTEM) and 3D atom probe (3DAP) tomography, Srinivasan et al. proposed a new point that in nickel base superalloys there exist two different interfacial widths across the {\gamma}/{\gamma}' interface, one corresponding to an order-disorder transition, and the other to the composition transition. We argue about this conclusion in this comment

SEAGRID: A New Dynamic Modelling Tool for Power System Analysis of Ocean Energy Devices

International audienceAs the ocean energy industry approaches commercial readiness, there will be a greater focus on integration of ocean energy devices (OEDs) into the electrical power system network. Device developers will be required to provide dynamic models of their device for grid connection, and ensure their device operates within the limits laid out in the grid code. Project developers will need to assess the impact of different wavefarm configurations, ratings for the electrical equipment, power losses, and performance during a fault. Grid operators will require dynamic models to investigate the impact an OED will have on the grid and also for future grid planning studies. The SEAGRID dynamic modelling tool attempts to address each of these issues using its generic modelling approach. The SEAGRID model is capable of producing a scalable time domain power system dynamic model using empirical test data and component specifications, bypassing the need for a full hydrodynamic study of the device

Generic Dynamic Modelling for Grid Integration of Ocean Energy Devices

International audienceAs ocean wave and tidal stream technologies approach commercial readiness, grid operators need to assess the impact a wave or tidal device will have on the electrical grid under both normal and fault conditions. In order to achieve this, it will be necessary for each device developer to supply dynamic models of their device to the grid operator. A generic modelling approach is proposed to facilitate the integration of ocean energy devices into the electrical grid, from the perspective of both device developers and grid operators. This paper outlines issues surrounding dynamic modelling for ocean energy devices, and proposes a generic model structure based on data obtained from a recent survey of device developers. The proposed model structure would simulate the power flow through a device using generic parameters which can be obtained from empirical test data and equipment specifications

Kinetics pathway of precipitation in model Co-Al-W superalloy

International audienc

Atomic scale investigation of Cr precipitation in copper

The early stage of the chromium precipitation in copper was analyzed at the atomic scale by Atom Probe Tomography (APT). Quantitative data about the precipitate size, 3D shape, density, composition and volume fraction were obtained in a Cu-1Cr-0.1Zr (wt.%) commercial alloy aged at 713K. Surprisingly, nanoscaled precipitates exhibit various shapes (spherical, plates and ellipsoid) and contain a large amount of Cu (up to 50%), in contradiction with the equilibrium Cu-Cr phase diagram. APT data also show that some impurities (Fe) may segregate along Cu/Cr interfaces. The concomitant evolution of the precipitate shape and composition as a function of the aging time is discussed. A special emphasis is given on the competition between interfacial and elastic energy and on the role of Fe segregation

A Photonic Atom Probe coupling 3D Atomic Scale Analysis with in situ Photoluminescence Spectroscopy

Laser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite phtotoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in-situ micro-Photoluminescence ({\mu}PL) bench that can be operated during APT analysis. The Photonic Atom Probe instrument we have developped operates at frequencies up to 500 kHz and is controlled by 150 fs laser pulses tunable in energy in a large spectral range (spanning from deep UV to near IR). Micro-PL spectroscopy is performed using a 320 mm focal length spectrometer equipped with a CCD camera for time-integrated and with a streak camera for time-resolved acquisitions. An exemple of application of this instrument on a multi-quantum well oxide heterostructure sample illustrates the potential of this new generation of tomographic atom probe.Comment: 22 pages, 4 figures. The following article has been accepted by the Review of Scientific Instruments. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals

Complex Precipitation Pathways in Multi-Component Alloys

One usual way to strengthen a metal is to add alloying elements and to control the size and the density of the precipitates obtained. However, precipitation in multicomponent alloys can take complex pathways depending on the relative diffusivity of solute atoms and on the relative driving forces involved. In Al-Zr-Sc alloys, atomic simulations based on first-principle calculations combined with various complementary experimental approaches working at different scales reveal a strongly inhomogeneous structure of the precipitates: owing to the much faster diffusivity of Sc compared with Zr in the solid solution, and to the absence of Zr and Sc diffusion inside the precipitates, the precipitate core is mostly Sc-rich, whereas the external shell is Zr-rich. This explains previous observations of an enhanced nucleation rate in Al-Zr-Sc alloys compared with binary Al-Sc alloys, along with much higher resistance to Ostwald ripening, two features of the utmost importance in the field of light high-strength materials

Atomic scale investigation of silicon nanowires and nanoclusters

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers

Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography

Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature) are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C