100ps time resolution with thin silicon pixel detectors and a SiGe HBT amplifier

A 100um thick silicon detector with 1mm2 pad readout optimized for sub-nanosecond time resolution has been developed and tested. Coupled to a purposely developed amplifier based on SiGe HBT technology, this detector was characterized at the H8 beam line at the CERN SPS. An excellent time resolution of (106+-1)ps for silicon detectors was measured with minimum ionizing particles

Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project

The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on state-of-the-art SiGe BiCMOS technology. The first ASIC prototype for the TT-PET was produced and tested in the laboratory and with minimum ionizing particles. The electronics exhibit an equivalent noise charge below 600 e- RMS and a pulse rise time of less than 2 ns, in accordance with the simulations. The pixels with a capacitance of 0.8 pF were measured to have a detection efficiency greater than 99% and, although in the absence of the post-processing, a time resolution of approximately 200 ps

A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels of 65 µm and 130 µm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 e- for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism. © 2019 CERN

Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology

SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of the main factors that may degrade the timing performance and the characterisation of the dependance of the sensor time resolution on the amplifier power consumption. Measurements with a $\mathrm{^{90}Sr}$ source of a prototype sensor produced in SG13G2 technology from IHP Microelectronics, shows a time resolution of 140 ps at an amplifier current of 7 $\mathrm{\mu}$A and 45 ps at higher power consumption. A full simulation shows that the resolution on the measurement of the signal time-over-threshold, used to correct for time walk, is the main factor affecting the timing performance

Characterization of the demonstrator of the fast silicon monolithic ASIC for the TT-PET project

The TT-PET collaboration is developing a small animal TOF-PET scanner based on monolithic silicon pixel sensors in SiGe BiCMOS technology. The demonstrator chip, a small-scale version of the final detector ASIC, consists of a 03 × 1 pixel matrix integrated with the front-end, a 50 ps binning TDC and read out logic. The chip, thinned down to 100 µm and backside metallized, was operated at a voltage of 180 V. The tests on a beam line of minimum ionizing particles show a detection efficiency greater than 99.9% and a time resolution down to 110 ps. © 2019 CERN

Phytotoxic metabolites from Neofusicoccum parvum, a pathogen of Botryosphaeria dieback of grapevine

Liquid chromatography-diode array screening of the organic extract of the cultures of 13 isolates of the fungus Neofusicoccum parvum, the main causal agent of botryosphaeria dieback of grapevine, showed similar metabolites. One strain was selected for further chemical studies and led to the isolation and characterisation of 13 metabolites. Structures were elucidated through spectroscopic analyses, including one- and two-dimensional NMR and mass spectrometry, and through comparison to literature data. The isolated compounds belong to four different chemical families: five metabolites, namely, ( )-terremutin (1), (+)-terremutin hydrate (2), (+)-epi-sphaeropsidone (3) ( )-4-chloro-terremutin hydrate (4) and(+)-4- hydroxysuccinate-terremutin hydrate (5), belong to the family of dihydrotoluquinones; two metabolites, namely, (6S,7R) asperlin (6) and (6R,7S)-dia-asperlin (7), belong to the family of epoxylactones; four metabolites, namely, (R)-( )-mellein (8), (3R,4R)-4-hydroxymellein (9), (3R,4S)-4-hydroxymellein (10) (R)( )-3-hydroxymellein (11), belong to the family of dihydroisocoumarins; and two of the metabolites, namely, 6-methyl-salicylic acid (12) and 2-hydroxypropyl salicylic acid (13), belong to the family of hydroxybenzoic acids. We determined the phytotoxic activity of the isolated metabolites through a leaf disc assay and the expression of defence-related genes in Vitis vinifera cells cv. Chardonnay cultured with ( )-terremutin (1), the most abundant metabolite. Finally, analysis of the brown stripes of grapevine wood from plants showing botryosphaeria dieback symptoms revealed the presence of two of the isolated phytotoxinsinfo:eu-repo/semantics/publishedVersio

Testbeam results of the Picosecond Avalanche Detector proof-of-concept prototype

The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region

Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype

The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a (NP)drift(NP)gain structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 μm pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a 55Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the ^55Fe source limits the effective gain

Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer

A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 {\mu}m thick epilayer with a resistivity of 350 {\Omega}cm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2.Comment: Submitted to JINS