18,164 research outputs found

    Is it possible to identify a trend in problem/failure data

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    One of the major obstacles in identifying and interpreting a trend is the small number of data points. Future trending reports will begin with 1983 data. As the problem/failure data are aggregated by year, there are just seven observations (1983 to 1989) for the 1990 reports. Any statistical inferences with a small amount of data will have a large degree of uncertainty. Consequently, a regression technique approach to identify a trend is limited. Though trend determination by failure mode may be unrealistic, the data may be explored for consistency or stability and the failure rate investigated. Various alternative data analysis procedures are briefly discussed. Techniques that could be used to explore problem/failure data by failure mode are addressed. The data used are taken from Section One, Space Shuttle Main Engine, of the Calspan Quarterly Report dated April 2, 1990

    Methods for trend analysis: Examples with problem/failure data

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    Statistics are emphasized as an important role in quality control and reliability. Consequently, Trend Analysis Techniques recommended a variety of statistical methodologies that could be applied to time series data. The major goal of the working handbook, using data from the MSFC Problem Assessment System, is to illustrate some of the techniques in the NASA standard, some different techniques, and to notice patterns of data. Techniques for trend estimation used are: regression (exponential, power, reciprocal, straight line) and Kendall's rank correlation coefficient. The important details of a statistical strategy for estimating a trend component are covered in the examples. However, careful analysis and interpretation is necessary because of small samples and frequent zero problem reports in a given time period. Further investigations to deal with these issues are being conducted

    Spatiotemporal Model for Kerr Comb Generation in Whispering Gallery Mode Resonators

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    We establish an exact partial differential equation to model Kerr comb generation in whispering-gallery mode resonators. This equation is a variant of the Lugiato-Lefever equation that includes higher-order dispersion and nonlinearity. This spatio-temporal model, whose main variable is the total intracavity field, is significantly more suitable than the modal expansion approach for the theoretical understanding and the numerical simulation of wide-span combs. It allows us to explore pulse formation in which a large number of modes interact cooperatively. This versatile approach can be straightforwardly extended to include higher-order dispersion, as well as other phenomena like Raman, Brillouin and Rayleigh scattering. We demonstrate for the first time that when the dispersion is anomalous, Kerr comb generation can arise as the spectral signature of dissipative cavity solitons, leading to wide-span combs with low pumping.Comment: 5 pages, 2 figure

    Operational performance of a low cost, air mass 2 solar simulator

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    Modifications and improvements on a low cost air mass 2 solar simulator are discussed. The performance characteristics of total irradiance, uniformity of irradiance, spectral distribution, and beam subtense angle are presented. The simulator consists of an array of tungsten halogen lamps hexagonally spaced in a plane. A corresponding array of plastic Fresnel lenses shapes the output beam such that the simulator irradiates a 1.2 m by 1.2 m area with uniform collimated irradiance. Details are given concerning individual lamp output measurements and placement of the lamps. Originally, only the direct component of solar irradiance was simulated. Since the diffuse component may affect the performance of some collectors, the capability to simulate it is being added. An approach to this diffuse addition is discussed

    Performance of Hughes GaAs concentrator cells under 1-MeV electron irradiation

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    Several Hughes gallium arsenide (GaAs) concentrator cells were exposed to 1-MeV electrons at fluences up to 1x10 to the 15th power electrons/sq cm. Performance data were taken after several fluences, at two temperatures, and at concentration levels from 1 to approx. 150x AMO. Data at 1 sun and 25 deg C were taken with an X-25 xenon-lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 by 5 mm with a 4-mm diameter illuminated area

    A low cost ""Air Mass 2'' solar simulator

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    Tungsten halogen projection lamps have integral ellipsoidal reflector, and hexagonal shaped plastic Fresnel lenses. Reflector is dichroic coated to reduce infrared content of reflected radiation. Array of lamps and lenses produces uniform collimated beam having near AM2 spectrum and intensity that can be used for testing flat plate solar collectors

    A parallel-plate flow chamber to study initial cell adhesion on a nanofeatured surface

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    Cells in the human body come across many types of information, which they respond to. Both material chemistry and topography of the surface where they adhere have an effect on cell shape, proliferation, migration, and gene expression. It is possible to create surfaces with topography at the nanometric scale to allow observation of cell-topography interactions. Previous work has shown that 100-nm-diameter pits on a 300-nm pitch can have a marked effect in reducing the adhesion of rat fibroblasts in static cultures. In the present study, a flow of cell suspension was used to investigate cell adhesion onto nanopits in dynamic conditions, by means of a parallel-plate flow chamber. A flow chamber with inner nanotopography has been designed, which allows real-time observation of the flow over the nanopits. A nanopitted pattern was successfully embossed into polymethylmethacrylate to meet the required shape of the chamber. Dynamic cell adhesion after 1 h has been quantified and compared on flat and nanopitted polymethylmethacrylate substrates. The nanopits were seen to be significantly less adhesive than the flat substrates (p<0.001), which is coherent with previous observations of static cultures

    Performance of GaAs and silicon concentrator cells under 37 MeV proton irradiation

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    Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 37 MeV protons at fluences up to 2.8 x 10 to the 12th protons/sq cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150 x AMO. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short circuit current and irradiance. The cells are 5 x 5 mm with a 4-mm diameter illuminated area
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