Plasmonic nanostructures for light trapping in thin-film solar cells

The optical properties of localized surface plasmon resonances (LSPR) sustained by self-assembled silver nanoparticles are of great interest for enhancing light trapping in thin film photovoltaics. First, we report on a systematic investigation of the structural and the optical properties of silver nanostructures fabricated by a solid-state dewetting process on various substrates. Our study allows to identify fabrication conditions in which circular, uniformly spaced nanoparticles are obtainable. The optimized NPs are then integrated into plasmonic back reflector (PBR) structures. Second, we demonstrate a novel procedure, involving a combination of opto-electronic spectroscopic techniques, allowing for the quantification of useful and parasitic absorption in thin photovoltaic absorber deposited on top of the PBR. We achieve a significant broadband useful absorption enhancement of 90% for 0.9 um thick uc-Si:H film and demonstrate that optical losses due to plasmonic scattering are insignificant below 730 nm. Finally, we present a successful implementation of a plasmonic light trapping scheme in a thin film a-Si:H solar cell. The quantum efficiency spectra of the devices show a pronounced broadband enhancement resulting in remarkably high short circuit current densities (Jsc)

Colloidal plasmonic back reflectors for light trapping in solar cells

Novel plasmonic scattering structures are presented, composed of self-assembled arrays of monosized colloidal gold nanospheres, for light trapping in photovoltaics

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal–organic vapor-phase epitaxy -grown epitaxial layer of p-doped GaN. Circular 200 μm-sized violet-emitting LEDs with a p-n contact distance as low as 3 μm exhibit a turn-on voltage of 3 V, and an emitting optical power at 395 nm of a few microwatts. Electroluminescence spectrum investigation shows that the emissive process can be ascribed to four different recombination transitions, dominated by the electron-hole recombinations on the ZnO side

Experimental quantification of useful and parasitic absorption of light in plasmon-enhanced thin silicon films for solar cells application

A combination of photocurrent and photothermal spectroscopic techniques is applied to experimentally quantify the useful and parasitic absorption of light in thin hydrogenated microcrystalline silicon (μc-Si:H) films incorporating optimized metal nanoparticle arrays, located at the rear surface, for improved light trapping via resonant plasmonic scattering. The photothermal technique accounts for the total absorptance and the photocurrent signal accounts only for the photons absorbed in the μc-Si:H layer (useful absorptance); therefore, the method allows for independent quantification of the useful and parasitic absorptance of the plasmonic (or any other) light trapping structure. We demonstrate that with a 0.9 μm thick absorber layer the optical losses related to the plasmonic light trapping in the whole structure are insignificant below 730 nm, above which they increase rapidly with increasing illumination wavelength. An average useful absorption of 43% and an average parasitic absorption of 19% over 400-1100 nm wavelength range is measured for μc-Si:H films deposited on optimized self-assembled Ag nanoparticles coupled with a flat mirror (plasmonic back reflector). For this sample, we demonstrate a significant broadband enhancement of the useful absorption resulting in the achievement of 91% of the maximum theoretical Lambertian limit of absorption

Broadband photocurrent enhancement in a-Si:H solar cells with plasmonic back reflectors

The authors acknowledge Francesco Ruffino for the AFM measurements. This work was funded by the EU FP7 Marie Curie Action FP7-PEOPLE-2010-ITN through the PROPHET project (Grant No. 264687), the bilateral CNR/AVCR project "Photoresponse of nanostructures for advanced photovoltaic applications", the MIUR project Energetic (Grant no. PON02_00355_3391233) and by the Portuguese Science Foundation (FCT-MEC) through the Strategic Project PEst-C/CTM/LA0025/2013-14 and the research project PTDC/CTM-ENE/2514/2012.Plasmonic light trapping in thin film silicon solar cells is a promising route to achieve high efficiency with reduced volumes of semiconductor material. In this paper, we study the enhancement in the opto-electronic performance of thin a-Si:H solar cells due to the light scattering effects of plasmonic back reflectors (PBRs), composed of self-assembled silver nanoparticles (NPs), incorporated on the cells' rear contact. The optical properties of the PBRs are investigated according to the morphology of the NPs, which can be tuned by the fabrication parameters. By analyzing sets of solar cells built on distinct PBRs we show that the photocurrent enhancement achieved in the a-Si:H light trapping window (600 - 800 nm) stays in linear relation with the PBRs diffuse reflection. The best-performing PBRs allow a pronounced broadband photocurrent enhancement in the cells which is attributed not only to the plasmon-assisted light scattering from the NPs but also to the front surface texture originated from the conformal growth of the cell material over the particles. As a result, remarkably high values of J(sc) and V-oc are achieved in comparison to those previously reported in the literature for the same type of devices. (C)2014 Optical Society of Americapublishersversionpublishe

Plasmonic nanostructures for light trapping in photovoltaic

Metallic nanoparticles (NPs), sustaining localized surface plasmon resonances, are currently of great interest for enhancing light trapping in thin film solar cells. To be directly applicable in the photovoltaic industry, the NPs fabrication needs to be simple, reliable, low-cost and scalable. As such, self-assembly processes are most commonly used, and Ag is the preferred material, due to its high radiative efficiency and low imaginary permittivity⁠. After exploring the correlation between structural and optical properties of Ag NPs fabricated by solid- state dewetting process on various substrates, we identified the fabrication conditions in which desirable NPs are obtained, but we also evidenced unexpectedly high parasitic absorption, main obstacle for photovoltaics. Thus, we introduced a novel spectroscopic method which enables the quantification of absorption enhancement and parasitic losses and demonstrated that the optical losses in the NPs are insignificant in the wavelength range of interest, while the NPs provides up to 90% useful absorption enhancement, which can be attributed to both the random front surface texture, originated from the conformal growth of the material over the NPs and to the scattering of light by the plasmonic NPs. Our optimized plasmon-enhanced thin film solar cell shows a pronounced broadband enhancement of external quantum efficiency and remarkably high short circuit current density in comparison to those reported in the literatur

Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (∼1-µm thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, Lh, coming from the p-contact. Moreover, the evaluation of Lh is not easy and generally requires the design and the fabrication of several LED test patterns. We propose a simple and effective method to calculate Lh, just based on simple considerations on I–V characteristics, and a way to improve the injection efficiency in the n region based on a noncircular electrode geometry. In particular, an interdigitated electrode structure is proved to be more efficient in terms of hole injection from n- to p-region