Extended point defects in crystalline materials: Ge and Si

B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a 'morph'. Computational modelling suggests that morphs exist in both self-interstitial and vacancy-like forms, and are crucial for diffusion and defect dynamics in Ge, Si and probably many other crystalline solids

Low temperature B activation in SOI using optimised vacancy engineering implants

AbstractIn this study 300keV and 1MeV Si vacancy engineering implants have been used to optimise the activation of a 2keV 1×1015cm-2 B implant into SOI. Although the two implants generate a similar areal density of excess vacancies in the SOI top layer, Hall Effect measurements show that low temperature activation is possible to a greater level with the 300keV Si co-implant than with the 1MeV implant. Hall and SIMS data are consistent with a high level of activation of the B at 700°C, with no significant diffusion at the metallurgical junction depth.</jats:p

Development prospects of the brand of Tomsk

The importance of territory branding is connected with the necessity of elaboration of new strategic approaches to brand creation of a country, a region, a city, along with the restatement of existent types of territory positioning in a view of harden competition between the cities for attracting of investments, opportunities and tourists. Creation of a strong, sustainable brand which can represent the city not only in Russia, but also abroad becomes topical. The modern reality is such that economic and demographic crisis reduces the amount of available financial and human capital assets. Under such conditions, the territories compete severely for any available resources. The winner of the competition is the one which can adapt to the changing situation and apply maximum tools for it. The territory branding is the main instrument for visitors’ attraction and most significantly for investors’ attraction as well as it is an important way of people’s loyalty forming. An increasing number of countries, regions and cities use territory branding. This way of attractiveness forming is especially developed abroad, but Russian cities and regions are mastering actively the territory branding. They don’t always succeed. The efficiency of this marketing instrument depends on many factors. The main issue the brand developers face is that they are mistaken in the understanding of territory brand as a beautiful image for tourist attraction. Tomsk is one of those cities which have enough peculiarities to be distinguished from others by means of creation of a strong and sustainable brand for representing the city outside it

Doping of sub-50nm SOI layers

Doping of thin body Si becomes very essential topic due to increasing interest of forming source/drain regions in fully depleted planar silicon-on-isolator (SOI) devices or vertical Fin field-effect-transistors (FinFETs). To diminish the role of the short-channel-effect (SCE) control, the Si layers thicknesses target the 10 nm range. In this paper many aspects of thin Si body doping are discussed: dopant retention, implantation-related amorphization, thin body recrystn., sheet resistance (Rs) and carrier mobility in cryst. or amorphized material, impact of the annealing ambient on Rs for various SOI thicknesses. The complexity of 3D geometry for vertical Fin and the vicinity of the extended surface have an impact on doping strategies that are significantly different than for planar bulk devices

Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon

Simulation and physical experiments have shown that vacancy engineering implants have the potential to provide outstanding pMOS source/drain performance for several future CMOS device generations. Using vacancy-generating implants prior to boron implantation, hole concentrations approaching 1021cm-3 can be achieved using low thermal budget annealing. In this new study we propose that the vacancy engineering technique is not reliant on the implementation of SOI-based CMOS but is also directly applicable to bulk silicon technologies

Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctions

Sub-melt laser annealing is a promising technique to achieve the required sheet resistance and junction depth specifications for the 32 nm technology node and beyond. In order to obtain a production worthy process with minimal sheet resistance variation at a macroscopic and microscopic level, careful process optimization is required. While macroscopic variations can easily be addressed using the proper spatial power compensation it is more difficult to completely eliminate the micro scale non-uniformity which is intimately linked to the laser beam profile, the amount of overlaps and the scan pitch. In this work, we will present micro scale sheet resistance uniformity measurements for shallow 0.5 keV B junctions and zoom in on the underlying effect of multiple subsequent laser scans. A variety of characterization techniques are used to extract the relevant junction parameters and the role of different implantation and anneal parameters will be explored. It turns out that the observed sheet resistance decrease with increasing number of laser scans is caused on one hand by a temperature dependent increase of the activation level, and on the other hand, by a non-negligible temperature and concentration dependent diffusion component