Application of amorphous carbon based materials as antireflective coatings on crystalline silicon solar cells

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)We report on the investigation of the potential application of different forms of amorphous carbon (a-C and a-C:H) as an antireflective coating for crystalline silicon solar cells. Polymeric-like carbon (PLC) and hydrogenated diamond-like carbon films were deposited by plasma enhanced chemical vapor deposition. Tetrahedral amorphous carbon (ta-C) was deposited by the filtered cathodic vacuum arc technique. Those three different amorphous carbon structures were individually applied as single antireflective coatings on conventional (polished and texturized) p-n junction crystalline silicon solar cells. Due to their optical properties, good results were also obtained for double-layer antireflective coatings based on PLC or ta-C films combined with different materials. The results are compared with a conventional tin dioxide (SnO(2)) single-layer antireflective coating and zinc sulfide/magnesium fluoride (ZnS/MgF(2)) double-layer antireflective coatings. An increase of 23.7% in the short-circuit current density, J(sc), was obtained using PLC as an antireflective coating and 31.7% was achieved using a double-layer of PLC with a layer of magnesium fluoride (MgF(2)). An additional increase of 10.8% was obtained in texturized silicon, representing a total increase (texturization + double-layer) of about 40% in the short-circuit current density. The potential use of these materials are critically addressed considering their refractive index, optical bandgap, absorption coefficient, hardness, chemical inertness, and mechanical stability. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622515]1104Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Brazilian financial research agency MCTConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq

Genetic epidemiology of SARS-CoV-2 transmission in renal dialysis units - a high risk community-hospital interface

OBJECTIVES: Patients requiring haemodialysis are at increased risk of serious illness with SARS-CoV-2 infection. To improve the understanding of transmission risks in six Scottish renal dialysis units, we utilised the rapid whole-genome sequencing data generated by the COG-UK consortium. METHODS: We combined geographical, temporal and genomic sequence data from the community and hospital to estimate the probability of infection originating from within the dialysis unit, the hospital or the community using Bayesian statistical modelling and compared these results to the details of epidemiological investigations. RESULTS: Of 671 patients, 60 (8.9%) became infected with SARS-CoV-2, of whom 16 (27%) died. Within-unit and community transmission were both evident and an instance of transmission from the wider hospital setting was also demonstrated. CONCLUSIONS: Near-real-time SARS-CoV-2 sequencing data can facilitate tailored infection prevention and control measures, which can be targeted at reducing risk in these settings

Interferon lambda 4 impacts the genetic diversity of hepatitis C virus

Hepatitis C virus (HCV) is a highly variable pathogen that frequently establishes chronic infection. This genetic variability is affected by the adaptive immune response but the contribution of other host factors is unclear. Here, we examined the role played by interferon lambda-4 (IFN-λ4) on HCV diversity; IFN-λ4 plays a crucial role in spontaneous clearance or establishment of chronicity following acute infection. We performed viral genome-wide association studies using human and viral data from 485 patients of white ancestry infected with HCV genotype 3a. We demonstrate that combinations of host genetic variants, which determine IFN-λ4 protein production and activity, influence amino acid variation across the viral polyprotein - not restricted to specific viral proteins or HLA restricted epitopes - and modulate viral load. We also observed an association with viral di-nucleotide proportions. These results support a direct role for IFN-λ4 in exerting selective pressure across the viral genome, possibly by a novel mechanism

The SARS-CoV-2 Alpha variant was associated with increased clinical severity of COVID-19 in Scotland: A genomics-based retrospective cohort analysis

Objectives The SARS-CoV-2 Alpha variant was associated with increased transmission relative to other variants present at the time of its emergence and several studies have shown an association between Alpha variant infection and increased hospitalisation and 28-day mortality. However, none have addressed the impact on maximum severity of illness in the general population classified by the level of respiratory support required, or death. We aimed to do this. Methods In this retrospective multi-centre clinical cohort sub-study of the COG-UK consortium, 1475 samples from Scottish hospitalised and community cases collected between 1st November 2020 and 30th January 2021 were sequenced. We matched sequence data to clinical outcomes as the Alpha variant became dominant in Scotland and modelled the association between Alpha variant infection and severe disease using a 4-point scale of maximum severity by 28 days: 1. no respiratory support, 2. supplemental oxygen, 3. ventilation and 4. death. Results Our cumulative generalised linear mixed model analyses found evidence (cumulative odds ratio: 1.40, 95% CI: 1.02, 1.93) of a positive association between increased clinical severity and lineage (Alpha variant versus pre-Alpha variants). Conclusions The Alpha variant was associated with more severe clinical disease in the Scottish population than co-circulating lineages

Purification of metallurgical silicon by horizontal zone melting

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)In this study, we aimed at systematically determining the potential of the zone melting (ZM) technique to remove impurities from Metallurgical Grade Silicon (MG- Si) in an Electron Beam Furnace (EBF), using a water-cooled copper crucible. Our focus was on obtaining solar grade silicon, with the purity between Electronic Grade Silicon (EG-Si) and MG-Si, at lower cost than the silicon obtained by the Siemens process. The MG- Si (99.855% purity in mass, or 1,450 ppm of impurities) was processed by 1 and 2 passes of ZM at speed of 1 mm/min and 10 mm/min. The ZM process reduced in 98% the total amount of impurities present in the MG-Si, increasing the purity from 99% to 99.999%, an intermediate stage to achieve the electronic grade (> 99.9999%). Boron remained near the same after the ZM due to its vapor pressure be lower than the pressure of the furnace chamber and due its distribution coefficient in silicon be near the unit. Carbon and oxygen in the MG-Si were reduced from 106 to 35 ppm and from 30 ppm to 5 ppm, respectively, after ZM, and these values are very close to the levels in the electronic grade silicon. The electrical resistivity showed to be dependent on the boron concentration, but not on the phosphorus or the total amount of impurities. All ingots processed by ZM exhibited p-type characteristics, and it means that boron was really the dominant dopant. (C) 2011 Elsevier B.V. All rights reserved.98233239Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP

Determination of the effective distribution coefficient (K) for silicon impurities

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)For the production of photovoltaic cells, the silicon purity can be intermediate between metallurgical grade silicon (MG-Si, 98%-99.9% pure) and electronic grade silicon (>99.9999% pure). This silicon, with intermediate purity and that still meets solar cell requirements, is called upgraded metallurgical grade silicon (UMG-Si). One method of producing UMG-Si is applying a controlled solidification process, like unidirectional solidification (heat exchange method), zone melting (or zone refining), or Czochralski growth to MG-Si. These processes use the impurities solubility difference in solid and liquid silicon known as effective distribution coefficient (K). For these reasons, to study the solidification process, it is necessary to determine K for silicon impurities, which is the objective of this study. MG-Si (99.85% purity or 1500 ppm of impurities) was processed by 1 pass of zone melting at 1 mm/min using an electron beam furnace with water cooled copper crucible. The effective distribution coefficient (K) for impurities with Ko <= 10(-1) was found to follow the relation K = 0.03 Ko(-0.063). For boron, K = 0.8. Impurities with Ko between 10(-3) and 10(-8) presented similar effective distribution coefficients (K = 0.07 +/- 0.02), meaning that the effective distribution coefficient of a specific impurity depends on the total amount of impurities. The measured impurities profiles in silicon were compared with those obtained by Pfann's equations using the effective distribution coefficients and showed comparative results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739759]44Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP

Structural, surface, and thermomechanical properties of intrinsic and argon implanted tetrahedral amorphous carbon

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)The structural, surface, and thermomechanical properties of intrinsic and argon incorporated tetrahedral amorphous carbon films deposited using the filtered cathodic vacuum arc process are reported. Argon atoms were simultaneously incorporated during the deposition of the films using an argon ion gun in the energy range of 0-180 eV. Contact angle measurements revealed that all of the deposited films are hydrophobic, regardless of the substrate bias voltage that was applied during the depositions. Thermal desorption spectroscopy measurements revealed that high argon bombarding energy favors films that are structurally more compact and thermally more stable. An investigation unbinding the mechanism of argon effusion and intrinsic stress relief is presented. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4774326]312Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)INES/MCTFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)FAPESP [10/51246-1, 2005/53926-1

Argon Implantation in Tetrahedral Amorphous Carbon Deposited by Filtered Cathodic Vacuum Arc

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)The implantation of argon in tetrahedral amorphous carbon (ta-C), deposited by the filtered cathodic vacuum arc technique and concurrently bombarded with argon ions (Ar+), is investigated in this study. The ta-C films were prepared with a 5-ms DC-pulsed arc, a current of 190 A, and a frequency of 3 Hz, and they were deposited on a ground substrate holder. The argon atoms were implanted into the film by simultaneously bombarding the films with a beam of Ar+ in the 0-180 eV energy range. The concentration of argon, determined by Rutherford backscattering spectroscopy, was investigated as a function of the Ar+ energy. Raman scattering spectroscopy was used to investigate the structure of the films. The stress of the films depends on the Ar+ energy and reduces significantly as a function of the annealing temperature. A study of argon effusion, ranging from room temperature up to 1000 A degrees C, shows that the argon atoms evolve from the films at different temperatures depending on the Ar+ energy. Scanning electron microscopy revealed the formation of bubbles after argon effusion. It was observed that the structural transformations that promote the relaxation of the carbon matrix and the argon effusion are different from each other.22513961404Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)INESFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq