53 research outputs found
Three-Fold Diffraction Symmetry in Epitaxial Graphene and the SiC Substrate
The crystallographic symmetries and spatial distribution of stacking domains
in graphene films on SiC have been studied by low energy electron diffraction
(LEED) and dark field imaging in a low energy electron microscope (LEEM). We
find that the graphene diffraction spots from 2 and 3 atomic layers of graphene
have 3-fold symmetry consistent with AB (Bernal) stacking of the layers. On the
contrary, graphene diffraction spots from the buffer layer and monolayer
graphene have apparent 6-fold symmetry, although the 3-fold nature of the
satellite spots indicates a more complex periodicity in the graphene sheets.Comment: An addendum has been added for the arXiv version only, including one
figure with five panels. Published paper can be found at
http://link.aps.org/doi/10.1103/PhysRevB.80.24140
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