11,671 research outputs found

    Giant Dielectric Permittivity of Electron-Doped Manganite Thin Films, Ca(1-x)La(x)MnO(3) ($0<= x<= 0.03)

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    A giant low-frequency, in-plane dielectric constant, eps~10^6, for epitaxial thin films of Ca(1-x)La(x)MnO(3) (x<=0.03) was observed over a broad temperature range, 4K <= T 300K. This phenomenon is attributed to an internal barrier-layer capacitor (IBLC) structure, with insulating boundaries between semiconducting grains. The room-temperature eps increases substantially with electron (La) doping. The measured values of eps exceed those of conventional two-phase IBLC materials based on (Ba,Sr)TiO(3) as well as recently discovered CaCu(3)Ti(4)O(12) and (Li,Ti) doped NiO.Comment: 5 pages, 4 fig.s, J. Appl. Phys., Jan. 15, 2005 (in press

    A continued fraction generator for smooth pulse sequences

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    Digital circuit produces rational output pulse rate at fraction of continuous input pulse rate. Output pulses have average rate with least possible deviation from absolute correct time spacing. Circuit uses include frequency synthesizing, fraction generation, and approximation of irrational sequences

    Extreme thermopower anisotropy and interchain transport in the quasi-one-dimensional metal Li(0.9)Mo(6)O(17)

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    Thermopower and electrical resistivity measurements transverse to the conducting chains of the quasi-one-dimensional metal Li(0.9)Mo(6)O(17) are reported in the temperature range 5 K = 400 K the interchain transport is determined by thermal excitation of charge carriers from a valence band ~ 0.14 eV below the Fermi level, giving rise to a large, p-type thermopower that coincides with a small, n-type thermopower along the chains. This dichotomy -- semiconductor-like in one direction and metallic in a mutually perpendicular direction -- gives rise to substantial transverse thermoelectric (TE) effects and a transverse TE figure of merit among the largest known for a single compound.Comment: PRL in press, manuscript (5pp, 4 Fig.'s) and Supplementary Material (3pp, 3 Fig.'s

    Hole Localization in Underdoped Superconducting Cuprates Near 1/8th Doping

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    Measurements of thermal conductivity versus temperature over a broad range of doping in YBa2_2Cu3_3O6+x_{6+x} and HgBa2_2Can1_{n-1}Cun_nO2n+2+δ_{2n+2+\delta} (nn=1,2,3) suggest that small domains of localized holes develop for hole concentrations near pp=1/8. The data imply a mechanism for localization that is intrinsic to the CuO2_2-planes and is enhanced via pinning associated with oxygen-vacancy clusters.Comment: 4 pages, 4 eps fig.'s, to be published, Phys. Rev.

    Red Sequence Cluster Finding in the Millennium Simulation

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    We investigate halo mass selection properties of red-sequence cluster finders using galaxy populations of the Millennium Simulation (MS). A clear red sequence exists for MS galaxies in massive halos at redshifts z < 1, and we use this knowledge to inform a cluster-finding algorithm applied to 500 Mpc/h projections of the simulated volume. At low redshift (z=0.4), we find that 90% of the clusters found have galaxy membership dominated by a single, real-space halo, and that 10% are blended systems for which no single halo contributes a majority of a cluster's membership. At z=1, the fraction of blends increases to 22%, as weaker redshift evolution in observed color extends the comoving length probed by a fixed range of color. Other factors contributing to the increased blending at high-z include broadening of the red sequence and confusion from a larger number of intermediate mass halos hosting bright red galaxies of magnitude similar to those in higher mass halos. Our method produces catalogs of cluster candidates whose halo mass selection function, p(M|\Ngal,z), is characterized by a bimodal log-normal model with a dominant component that reproduces well the real-space distribution, and a redshift-dependent tail that is broader and displaced by a factor ~2 lower in mass. We discuss implications for X-ray properties of optically selected clusters and offer ideas for improving both mock catalogs and cluster-finding in future surveys.Comment: final version to appear in MNRAS. Appendix added on purity and completeness, small shift in red sequence due to correcting an error in finding i

    Ferroelectric bolometer measures RF absolute power at submillimeter wavelengths

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    Two ferroelectric bolometer sensing elements measure low rf absolute power at millimeter and submillimeter wavelengths. The sensing elements are mounted in sections of waveguide and connected in series in a standard temperature compensating bridge circuit

    Submillimeter satellite radiometer first semiannual engineering progress report

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    Development of 560 GHz fourth harmonic mixer and 140 GHz third harmonic generator for use in radiomete

    Stoichiometry, structure, and transport in the quasi-one-dimensional metal, Li(0.9)Mo(6)O(17)

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    A correlation between lattice parameters, oxygen composition, and the thermoelectric and Hall coefficients is presented for single-crystal Li(0.9)Mo(6)O(17), a quasi-one-dimensional (Q1D) metallic compound. The possibility that this compound is a compensated metal is discussed in light of a substantial variability observed in the literature for these transport coefficients.Comment: 5 pages, 4 Figures; Phys. Rev. B (in press

    Strain-controlled band engineering and self-doping in ultrathin LaNiO3_3 films

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    We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultra-thin metallic LaNiO3_3 films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As the film strain varies from compressive to tensile at fixed composition and stoichiometry, the transport coefficients evolve in a manner strikingly similar to those of bulk hole-doped superconducting cuprates with varying doping level. Density functional calculations reveal that the strain-induced changes in the transport properties are due to self-doping in the low-energy electronic band structure. The results imply that thin-film epitaxy can serve as a new means to achieve hole-doping in other (negative) charge-transfer gap transition metal oxides without resorting to chemical substitution
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