A giant low-frequency, in-plane dielectric constant, eps~10^6, for epitaxial
thin films of Ca(1-x)La(x)MnO(3) (x<=0.03) was observed over a broad
temperature range, 4K <= T 300K. This phenomenon is attributed to an internal
barrier-layer capacitor (IBLC) structure, with insulating boundaries between
semiconducting grains. The room-temperature eps increases substantially with
electron (La) doping. The measured values of eps exceed those of conventional
two-phase IBLC materials based on (Ba,Sr)TiO(3) as well as recently discovered
CaCu(3)Ti(4)O(12) and (Li,Ti) doped NiO.Comment: 5 pages, 4 fig.s, J. Appl. Phys., Jan. 15, 2005 (in press