Growth and Characterization of Carbon Nanofibers Grown on Vertically Aligned InAs Nanowires via Chemical Vapour Deposition

The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major challenge. This study presents a method for the controlled growth of carbon nanofibers (CNFs) on vertically aligned indium arsenide (InAs) nanowires. The CNF/InAs hybrid structures, synthesized using chemical vapor deposition (CVD), were successfully produced without compromising the morphology of the pristine nanowires. Under optimized conditions, preferential growth of the carbon nanofibers in the direction perpendicular to the InAs nanowires was observed. Moreover, when the CVD process employed iron as a catalyst, an increased growth rate was achieved. With and without the presence of iron, carbon nanofibers nucleate preferentially on the top of the InAs nanowires, indicating a tip growth mechanism presumably catalysed by a gold-indium alloy that selectively forms in that region. These results represent a compelling example of controlled interconnections between adjacent InAs nanowires formed by carbon fibers.</p

Growth and Characterization of Carbon Nanofibers Grown on Vertically Aligned InAs Nanowires via Chemical Vapour Deposition

The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major challenge. This study presents a method for the controlled growth of carbon nanofibers (CNFs) on vertically aligned indium arsenide (InAs) nanowires. The CNF/InAs hybrid structures, synthesized using chemical vapor deposition (CVD), were successfully produced without compromising the morphology of the pristine nanowires. Under optimized conditions, preferential growth of the carbon nanofibers in the direction perpendicular to the InAs nanowires was observed. Moreover, when the CVD process employed iron as a catalyst, an increased growth rate was achieved. With and without the presence of iron, carbon nanofibers nucleate preferentially on the top of the InAs nanowires, indicating a tip growth mechanism presumably catalysed by a gold-indium alloy that selectively forms in that region. These results represent a compelling example of controlled interconnections between adjacent InAs nanowires formed by carbon fibers.</p

Growth and Characterization of Carbon Nanofibers Grown on Vertically Aligned InAs Nanowires via Chemical Vapour Deposition

The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major challenge. This study presents a method for the controlled growth of carbon nanofibers (CNFs) on vertically aligned indium arsenide (InAs) nanowires. The CNF/InAs hybrid structures, synthesized using chemical vapor deposition (CVD), were successfully produced without compromising the morphology of the pristine nanowires. Under optimized conditions, preferential growth of the carbon nanofibers in the direction perpendicular to the InAs nanowires was observed. Moreover, when the CVD process employed iron as a catalyst, an increased growth rate was achieved. With and without the presence of iron, carbon nanofibers nucleate preferentially on the top of the InAs nanowires, indicating a tip growth mechanism presumably catalysed by a gold-indium alloy that selectively forms in that region. These results represent a compelling example of controlled interconnections between adjacent InAs nanowires formed by carbon fibers.</p

Growth and Characterization of Carbon Nanofibers Grown on Vertically Aligned InAs Nanowires via Chemical Vapour Deposition

The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major challenge. This study presents a method for the controlled growth of carbon nanofibers (CNFs) on vertically aligned indium arsenide (InAs) nanowires. The CNF/InAs hybrid structures, synthesized using chemical vapor deposition (CVD), were successfully produced without compromising the morphology of the pristine nanowires. Under optimized conditions, preferential growth of the carbon nanofibers in the direction perpendicular to the InAs nanowires was observed. Moreover, when the CVD process employed iron as a catalyst, an increased growth rate was achieved. With and without the presence of iron, carbon nanofibers nucleate preferentially on the top of the InAs nanowires, indicating a tip growth mechanism presumably catalysed by a gold-indium alloy that selectively forms in that region. These results represent a compelling example of controlled interconnections between adjacent InAs nanowires formed by carbon fibers.</p

Growth and Characterization of Carbon Nanofibers Grown on Vertically Aligned InAs Nanowires via Chemical Vapour Deposition

The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major challenge. This study presents a method for the controlled growth of carbon nanofibers (CNFs) on vertically aligned indium arsenide (InAs) nanowires. The CNF/InAs hybrid structures, synthesized using chemical vapor deposition (CVD), were successfully produced without compromising the morphology of the pristine nanowires. Under optimized conditions, preferential growth of the carbon nanofibers in the direction perpendicular to the InAs nanowires was observed. Moreover, when the CVD process employed iron as a catalyst, an increased growth rate was achieved. With and without the presence of iron, carbon nanofibers nucleate preferentially on the top of the InAs nanowires, indicating a tip growth mechanism presumably catalysed by a gold-indium alloy that selectively forms in that region. These results represent a compelling example of controlled interconnections between adjacent InAs nanowires formed by carbon fibers.</p

Gold nanoparticles onto cerium oxycarbonate as highly efficient catalyst for aerobic allyl alcohol oxidation

Abstract Au nanoparticles, generated by the metal vapor synthesis technique, were supported onto cerium oxycarbonate monohydrate (Ce2O(CO3)2·H2O) giving Au@Ce2O(CO3)2·H2O. The obtained heterogeneous catalyst was used in the aerobic allyl alcohol oxidation reaction performed in toluene, showing a notably higher catalytic substrate conversion and isomerization activity compared to Au onto ceria, which is the reference catalyst for this type of catalysis. Results originating from catalytic recycling experiments and PXRD, HRTEM and XPS measurements carried out on recovered Au@Ce2O(CO3)2·H2O, confirmed the stability of the catalyst under aerobic oxidation reaction conditions and hence its recyclability, without the need of a regeneration step

Temperature-Driven Changes of the Graphene Edge Structure on Ni(111): Substrate vs Hydrogen Passivation

Atomic-scale description of the structure of graphene edges on Ni(111), both during and post growth, is obtained by scanning tunneling microscopy (STM) in combination with density functional theory (DFT). During growth, at 470 \ub0C, fast STM images (250 ms/image) evidence graphene flakes anchored to the substrate, with the edges exhibiting zigzag or Klein structure depending on the orientation. If growth is frozen, the flake edges hydrogenate and detach from the substrate, with hydrogen reconstructing the Klein edges

Characterization of high-quality MgB2(0001) epitaxial films on Mg(0001)

High-grade MgB2(0001) films were grown on Mg(0001) by means of ultra-high-vacuum molecular beam epitaxy. Low energy electron diffraction and x-ray diffraction data indicate that thick films are formed by epitaxially oriented grains with MgB2 bulk structure. The quality of the films allowed angle-resolved photoemission and polarization dependent x-ray absorption measurements. For the first time, we report the band mapping along the Gamma-A direction and the estimation of the electron-phonon coupling constant l ~ 0.55 for the surface state electrons.Comment: 15 text pages, 6 figures Submitted for publicatio

Operando atomic-scale study of graphene CVD growth at steps of polycrystalline nickel

An operando investigation of graphene growth on (100) grains of polycrystalline nickel (Ni) surfaces was performed by means of variable-temperature scanning tunneling microscopy complemented by density functional theory simulations. A clear description of the atomistic mechanisms ruling the graphene expansion process at the stepped regions of the substrate is provided, showing that different routes can be followed, depending on the height of the steps to be crossed. When a growing graphene flake reaches a monoatomic step, it extends jointly with the underlying Ni layer; for higher Ni edges, a different process, involving step retraction and graphene landing, becomes active. At step bunches, the latter mechanism leads to a peculiar \u2018staircase formation\u2019 behavior, where terraces of equal width form under the overgrowing graphene, driven by a balance in the energy cost between C\u2013Ni bond formation and stress accumulation in the carbon layer. Our results represent a step towards bridging the material gap in searching new strategies and methods for the optimization of chemical vapor deposition graphene production on polycrystalline metal surfaces