Comparison of Cascade, Lattice, and Parallel Filter Architectures

© 2010 IEEE.This is a a joint IEEE/OSA publication. The definitive version of this paper is available at: http://dx.doi.org/10.1109/JLT.2010.2089972DOI: 10.1109/JLT.2010.2089972We examine the use of different high-level filter architectures (cascade, lattice, and parallel). We discuss their advantages and disadvantages, and we present simulation results and filter-tolerance tests. This information serves as a useful comparative analysis in the selection of a high-level filter architecture for a particular problem. The sensitivity to nonlinearity is also evaluated as resonance-enhanced power in the feedback path. For narrowband band-pass responses, cascade architectures appear to be more tolerant to filter parameter variations than lattice architectures and are substantially more efficient than parallel architecture

Fully reconfigurable compact RF photonic filters using high-Q silicon microdisk resonators

© 2011 Optical Society of AmericaThe definitive version of this paper is available at: http://dx.doi.org10.1364/OE.19.015899DOI: 10.1364/OE.19.015899We present a fully reconfigurable fourth-order RF photonic filter on SOI platform with a tunable 3-dB bandwidth of 0.9–5 GHz, more than 38 dB optical out-of-band rejection, FSR up to 650 GHz, and compact size (total area 0.25 mm²). The center wavelength of the filter can be tuned over a wide range with a power consumption of 10 mW/nm. The filter architecture uses a unit-cell based approach to realize the desired filter specifications. The use of high-Q resonator-based components enables a dramatic reduction in size, weight and power (SWaP) of each unit cell, with the possibility of cascading a large number of these unit cells on a single chip. Thermal reconfiguration allows for low insertion loss and therefore results in the scalability of these filters. The demonstrated filter can be used in many different applications including RF photonic front-ends and high speed optical A/D conversion

Selective co-doped erbium {T}i:{L}i{N}b{O}3_3 waveguide amplifiers

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