632 research outputs found

    Comparison of semirigorous and empirical models derived using data quality assessment methods

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    With the increase in available data and the stricter control requirements for mineral processes, the development of automated methods for data processing and model creation are becoming increasingly important. In this paper, the application of data quality assessment methods for the development of semirigorous and empirical models of a primary milling circuit in a platinum concentrator plant is investigated to determine their validity and how best to handle multivariate input data. The data set used consists of both routine operating data and planned step tests. Applying the data quality assessment method to this data set, it was seen that selecting the appropriate subset of variables for multivariate assessment was difficult. However, it was shown that it was possible to identify regions of sufficient value for modeling. Using the identified data, it was possible to fit empirical linear models and a semirigorous nonlinear model. As expected, models obtained from the routine operating data were, in general, worse than those obtained from the planned step tests. However, using the models obtained from routine operating data as the initial seed models for the automated advanced process control methods would be extremely helpful. Therefore, it can be concluded that the data quality assessment method was able to extract and identify regions sufficient and acceptable for modeling

    NiGa2_{2}O4_{4} interfacial layers in NiO/Ga2_{2}O3_{3} heterojunction diodes at high temperature

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    NiO/Ga2_{2}O3_{3} heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we report on the time evolution of the static electrical properties in the widely studied p-NiO/n-Ga2_{2}O3_{3}heterojunction diodes and the formation of NiGa2_{2}O4_{4} interfacial layers when operated at 550∘550^{\circ}C. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO-Ga2_{2}O3_{3} interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO-Ga2_{2}O3_{3} interface forms ternary compounds at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa2_{2}O4_{4} layer between NiO and Ga2_{2}O3_{3}. First-principles defect calculations find that NiGa2_{2}O4_{4} shows low p-type intrinsic doping, and hence can also serve to limit electric field crowding at the interface. Vertical NiO/Ga2_{2}O3_{3} diodes with intentionally grown 5 nm thin spinel-type NiGa2_{2}O4_{4} interfacial layers show excellent device ON/OFF ratio of > 1010^{10}(±\pm3 V), VON_{ON} of ~1.9 V, and breakdown voltage of ~ 1.2 kV for an initial unoptimized 300-micron diameter device. These p-n heterojunction diodes are promising for high-voltage, high-temperature applications.Comment: 16 pages, 5 figure
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