1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates

Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare

Determination of mechanical properties of poppy waste pellets

ArticleThe work deals with evaluation of mechanical properties three types of pellet samples produced fro m poppy waste. The pellets were submitted to compressive loading. The compressive loading curves of dependencies of force on strain and force on time were realised. Certain mechanical parameters were determined, namely the diameter of the sample, length of the sample, force at 10% of strain, force in the first maximum of the force – strain curve, strain in the first maximum of the force – strain curve, modulus of elasticity, force in the inflex point of the force – time and force – strain curves and strain and stress in the inflex point of the force – time and force – strain curves. The work lists correlations of mechanical parameters of individual pellet types. The pellet type 1 made only of ground poppy head mass has shown the best results, the pellet type 3 consisting of ground poppy heads after harvest and waste from sieving of poppy seeds in mass proportion 1 : 1 has shown the worst results

Transient jets in the symbiotic prototype Z Andromedae

We present development of the collimated bipolar jets from the symbiotic prototype Z And that appeared and disappeared during its 2006 outburst. In 2006 July Z And reached its historical maximum at U ~ 8.0. During this period, rapid photometric variations with Dm ~ 0.06 mag on the timescale of hours developed. Simultaneously, high-velocity satellite components appeared on both sides of the H-alpha and H-beta emission line profiles. They were launched asymmetrically with the red/blue velocity ratio of 1.2 - 1.3. From about mid-August they became symmetric. Their spectral properties indicated ejection of bipolar jets collimated within an average opening angle of 6.1 degrees. We estimated average outflow rate via jets to dM(jet)/dt ~ 2xE10-6(R(jet)/1AU)**(1/2) M(Sun)/year, during their August - September maximum, which corresponds to the emitting mass in jets, M(jet, emitting) ~ 6xE-10(Rjet)/1AU)^{3/2} M(Sun). During their lifetime, the jets released the total mass of M(jet, total) approx 7.4x1E-7 M(Sun). Evolution in the rapid photometric variability and asymmetric ejection of jets around the optical maximum can be explained by a disruption of the inner parts of the disk caused by radiation-induced warping of the disk.Comment: 31 pages, 9 figures, 2 tables, accepted for Ap

Thermoelectric cross-plane properties on p- and n-Ge/SixGe1-x superlattices

Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/SixGe1-x superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si0.5Ge0.5 superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si0.3Ge0.7 superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period

Application of Bryan's algorithm to the mobility spectrum analysis of semiconductor devices

A powerful method for mobility spectrum analysis is presented, based on Bryan's maximum entropy algorithm. The Bayesian analysis central to Bryan's algorithm ensures that we avoid overfitting of data, resulting in a physically reasonable solution. The algorithm is fast, and allows the analysis of large quantities of data, removing the bias of data selection inherent in all previous techniques. Existing mobility spectrum analysis systems are reviewed, and the performance of the Bryan's algorithm mobility spectrum (BAMS) approach is demonstrated using synthetic data sets. Analysis of experimental data is briefly discussed. We find that BAMS performs well compared to existing mobility spectrum methods

Ge/SiGe parabolic quantum wells

Quantum wells with parabolic confining potentials allow the realization of semiconductor heterostructures mimicking the physical properties of a quantum harmonic oscillator. Here we report the attempt of attaining such parabolic quantum wells (PQWs) within the Ge/SiGe material platform. Multiple PQWs featuring different widths and composition have been epitaxially grown and characterized by means of high-resolution x-ray diffraction and scanning transmission electron microscopy. The compositional profile is seen to deviate slightly from an ideal parabola, but the quantum confined states are almost equally spaced within the valence and conduction band as indicated by photoreflectance measurements and k . p modelling

High frequency oscillations in epileptic and non-epileptic human hippocampus during a cognitive task

Hippocampal high-frequency electrographic activity (HFOs) represents one of the major discoveries not only in epilepsy research but also in cognitive science over the past few decades. A fundamental challenge, however, has been the fact that physiological HFOs associated with normal brain function overlap in frequency with pathological HFOs. We investigated the impact of a cognitive task on HFOs with the aim of improving differentiation between epileptic and non-epileptic hippocampi in humans. Hippocampal activity was recorded with depth electrodes in 15 patients with focal epilepsy during a resting period and subsequently during a cognitive task. HFOs in ripple and fast ripple frequency ranges were evaluated in both conditions, and their rate, spectral entropy, relative amplitude and duration were compared in epileptic and non-epileptic hippocampi. The similarity of HFOs properties recorded at rest in epileptic and non-epileptic hippocampi suggests that they cannot be used alone to distinguish between hippocampi. However, both ripples and fast ripples were observed with higher rates, higher relative amplitudes and longer durations at rest as well as during a cognitive task in epileptic compared with non-epileptic hippocampi. Moreover, during a cognitive task, significant reductions of HFOs rates were found in epileptic hippocampi. These reductions were not observed in non-epileptic hippocampi. Our results indicate that although both hippocampi generate HFOs with similar features that probably reflect non-pathological phenomena, it is possible to differentiate between epileptic and non-epileptic hippocampi using a simple odd-ball task

Extending the emission wavelength of Ge nanopillars to 2.25 μm using silicon nitride stressors

The room temperature photoluminescence from Ge nanopillars has been extended from 1.6 μm to above 2.25 μm wavelength through the application of tensile stress from silicon nitride stressors deposited by inductively-coupled-plasma plasma-enhanced chemical-vapour-deposition. Photoluminescence measurements demonstrate biaxial equivalent tensile strains of up to ~ 1.35% in square topped nanopillars with side lengths of 200 nm. Biaxial equivalent strains of 0.9% are observed in 300 nm square top pillars, confirmed by confocal Raman spectroscopy. Finite element modelling demonstrates that an all-around stressor layer is preferable to a top only stressor, as it increases the hydrostatic component of the strain, leading to an increased shift in the band-edge and improved uniformity over top-surface only stressors layers

Expanding the Ge emission wavelength to 2.25 μm with SixNy strain engineering

Photoluminescence up to 2.25 μm wavelength is demonstrated from Ge nanopillars strained by silicon nitride stressor layers. Tensile biaxial equivalent strains of up to ~1.35% and ~0.9% are shown from 200 × 200 nm, and 300 × 300 nm square top Ge pillars respectively. Strain in the latter is confirmed by Raman spectroscopy, and supported by finite element modelling, which gives an insight into the strain distribution and its effect on the band structure, in pillar structures fully coated by silicon nitride stressor layers

Ge-rich graded-index SiGe alloys: exploring a versatile platform for mid-IR photonics

International audienceIn this paper, the recent progress on a new Ge-rich SiGe platform for mid-IR integrated photonics is presented. Low-loss spiral waveguides working over a broadband wavelength range are discussed, followed by a sensing proof-of-concept using a standalone photoresist with a known spectral absorption pattern. In addition, the development of new mid-IR interferometric devices for wavelength filtering and enhancement of the light-matter interaction are presented. Finally, efficient designs to exploit the third-order nonlinearities in these Ge-rich SiGe waveguides at mid-IR wavelengths are shown. The demonstration of these key building blocks will pave the way towards the implementation of new mid-IR photonic integrated systems with multiple functionalities