Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy

Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to the difficulties in defining abrupt junction geometry and escaping physical damages from the post-doping process. Utilizing monolithically grown lateral p-n junction vertical NW also has problem because the as-grown NWs are not compatible with conventional planar device processing. In this thesis research, arrays of lateral p-n junction planar GaAs NW diodes grown by selective lateral epitaxy (SLE) mechanism was developed to overcome the limitations of current lateral p-n junctions in thin films and vertical NWs. Size and position controlled array of lateral p-n junction planar GaAs NWs were monolithically grown on semi-insulating GaAs (100) substrate using metal-organic chemical vapor deposition (MOCVD). The realization of lateral p-n junction diodes was confirmed by measuring two terminal I-V characteristics of the devices. The device was turned on at 1.2 V of diode voltage, and the 106 of rectification ratio and 2.18 of ideality factor were measured. The forward-biased current scales with the number of contacted NWs. Finally, the doping concentration modulation capability on SLE grown planar p-n NWs were verified

Tribological Characteristics of SCM 440 Bearing Steel Under Gas and Oil Lubricant in The Cylinder Block Tractor Engine

Purpose – This paper aims to examine the friction coefficient and wear rate characteristics of SCM 440 bearing steel used in the cylinder block of a tractor engine with gas lubrication and oil lubrication. Design/methodology/approach – Friction tests were performed using a pin-on-disc tester with loads of 2 to 10 N and sliding velocities of 0.06 to 0.34 m/s. The experiment was done with and without nitrogen, and paraffin oil lubricant was used to prevent wear during process. Findings – The nondimensional characteristic number from the Stribeck curves indicated that the lubrication regime is hydrodynamic. As the velocity and load increased, the friction coefficient of the SCM 440 increased and greater applied load resulted in a smaller friction coefficient. The range of the friction coefficient was 0.017001 to 0.092904 with paraffin oil lubrication and 0.01614 to 0.4555 with nitrogen lubrication. Nitrogen is effective in reducing the friction coefficient of materials that are in contact and subjected to a load and velocity. Originality/value – The experiments confirm that nitrogen is effective for reducing the friction coefficient of SCM 440 materials that are in contact with each other and subjected to a load and velocit

Flow Characteristics Around Step-Up Street Canyons with Various Building Aspect Ratios

We investigate the flow characteristics around step-up street canyons with various building aspect ratios (ratio of along-canyon building length to street-canyon width, and upwind building height to downwind building height) using a computational fluid dynamics (CFD) model. Simulated results are validated against experimental wind-tunnel results, with the CFD simulations conducted under the same building configurations as those in the wind-tunnel experiments. The CFD model reproduces the measured in-canyon vortex, rooftop recirculation zone above the downwind building, and stagnation point position reasonably well. We analyze the flow characteristics, focusing on the structural change of the in-canyon flows and the interaction between the in- and around-canyon flows with the increase of building-length ratio. The in-canyon flows undergo development and mature stages as the building-length ratio increases. In the development stage (i.e., small building-length ratios), the position of the primary vortex wanders, and the incoming flow closely follows both the upstream and downstream building sidewalls. As a result, increasing momentum transfer from the upper layer contributes to a momentum increase in the in-canyon region, and the vorticity in the in-canyon region also increases. In the mature stage (i.e., large building-length ratios), the primary vortex stabilizes in position, and the incoming flow no longer follows the building sidewalls. This causes momentum loss through the street-canyon lateral boundaries. As the building-length ratio increases, momentum transfer from the upper layer slightly decreases, and the reverse flow, updraft, and streamwise flow in the in-canyon region also slightly decrease, resulting in vorticity reduction

Use of Resazurin To Rapidly Enumerate Bdellovibrio and Like Organisms and Evaluate Their Activities

A method to rapidly quantify predatory bacterial cell populations using resazurin reduction to resorufin and its resulting fluorescence kinetics (dF/dt) are described. The reliability of this method to measure the predatory populations was demonstrated with the type strain, Bdellovibrio bacteriovorus HD100, as well as B. bacteriovorus 109J and two natural isolates, Halobacteriovorax strains JA-1 and JA-3, with clear correlation when densities were between 107 and 109 PFU/ml. Resazurin was also used to evaluate how B. bacteriovorus HD100 and Halobacteriovorax strain JA-1 respond to harmful conditions, i.e., exposure to sodium dodecyl sulfate (SDS), with both the dF/dt and PFU/ml indicating Halobacteriovorax strain JA-1 is more sensitive to this surfactant. Tests were also performed using media of different osmolalities, with the dF/dt values matching the 24-h predatory activities reasonably well. Finally, this method was successfully applied in near real-time analyses of predator-prey dynamics and, when coupled with SDS, was capable of differentiating between the predatory and prey populations. All of these tests serve to prove this method is (i) very rapid, needing only 15 min from start to finish; (ii) very reliable with different predatory bacterial species; and (iii) very versatile as it can be easily adapted to measure predatory numbers and activities in a range of experiments

Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy

Bottom-up grown III-V compound semiconductor nanowires (NWs) provide a novel building block for electrical and optical devices. Bottom-up III-V NWs can be synthesized by either a vapor-liquid-solid (VLS) or selective area epitaxy (SAE) mechanism. Under the specific VLS NW growth conditions, planar self-aligned NWs can be grown on top of a substrate under a selective lateral epitaxy (SLE) mechanism. In this thesis research, first, the realization of lateral multiple p-n junction gallium arsenide (GaAs) SLE NW grown by metal-organic chemical vapor deposition (MOCVD) reactor is presented. Scanning microwave impedance microscopy (sMIM) and infrared scattering-type near-field optical microscopy (IR-SNOM) scans on top of the NW suggested that p-type zinc dopants are accumulated at twin-plane boundaries of NW. The electrical properties of the SLE GaAs lateral p-n junction were analyzed by measuring two-terminal I-V characteristics of arrays of p-n NW diodes. The I-V characteristics of the devices indicated that the lateral p-n junction was successfully realized with a high rectification ratio of ~106. The gallium phosphide (GaP) SAE NW growth on top of a silicon (Si) substrate will be also introduced. Systemic studies were performed by modulating the following three NW growth conditions: TMGa flow rate, growth temperature, and V/III ratio. By controlling the NW growth parameters, a 97.5% yield of hexagonal NWs was grown on an area of 400 µm × 400 µm. The morphology of the NWs was inspected with a scanning electron microscope (SEM). X-ray diffraction (XRD) analysis was performed on the GaP NWs, and 6.3016 Å of wurtzite (WZ) GaP c-lattice parameter was extracted. Vertical arrays of GaP p-n and p-i-n NW diodes were fabricated. The ideality factor and rectification ratio of p-n GaP NW diode were measured 7 and 10, respectively. The ideality factor and the rectification ratio could be improved to 3.7 and 1000 by introducing an undoped intrinsic layer between n-type and p-type GaP NW.LimitedAuthor requested closed access (OA after 2yrs) in Vireo ETD syste

Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy

Bottom-up grown III-V compound semiconductor nanowires (NWs) provide a novel building block for electrical and optical devices. Bottom-up III-V NWs can be synthesized by either a vapor-liquid-solid (VLS) or selective area epitaxy (SAE) mechanism. Under the specific VLS NW growth conditions, planar self-aligned NWs can be grown on top of a substrate under a selective lateral epitaxy (SLE) mechanism. In this thesis research, first, the realization of lateral multiple p-n junction gallium arsenide (GaAs) SLE NW grown by metal-organic chemical vapor deposition (MOCVD) reactor is presented. Scanning microwave impedance microscopy (sMIM) and infrared scattering-type near-field optical microscopy (IR-SNOM) scans on top of the NW suggested that p-type zinc dopants are accumulated at twin-plane boundaries of NW. The electrical properties of the SLE GaAs lateral p-n junction were analyzed by measuring two-terminal I-V characteristics of arrays of p-n NW diodes. The I-V characteristics of the devices indicated that the lateral p-n junction was successfully realized with a high rectification ratio of ~106. The gallium phosphide (GaP) SAE NW growth on top of a silicon (Si) substrate will be also introduced. Systemic studies were performed by modulating the following three NW growth conditions: TMGa flow rate, growth temperature, and V/III ratio. By controlling the NW growth parameters, a 97.5% yield of hexagonal NWs was grown on an area of 400 µm × 400 µm. The morphology of the NWs was inspected with a scanning electron microscope (SEM). X-ray diffraction (XRD) analysis was performed on the GaP NWs, and 6.3016 Å of wurtzite (WZ) GaP c-lattice parameter was extracted. Vertical arrays of GaP p-n and p-i-n NW diodes were fabricated. The ideality factor and rectification ratio of p-n GaP NW diode were measured 7 and 10, respectively. The ideality factor and the rectification ratio could be improved to 3.7 and 1000 by introducing an undoped intrinsic layer between n-type and p-type GaP NW.LimitedAuthor requested closed access (OA after 2yrs) in Vireo ETD syste