Anomalous Light Scattering by Topological PT{\mathcal{PT}}-symmetric Particle Arrays

Robust topological edge modes may evolve into complex-frequency modes when a physical system becomes non-Hermitian. We show that, while having negligible forward optical extinction cross section, a conjugate pair of such complex topological edge modes in a non-Hermitian $\mathcal{PT}$-symmetric system can give rise to an anomalous sideway scattering when they are simultaneously excited by a plane wave. We propose a realization of such scattering state in a linear array of subwavelength resonators coated with gain media. The prediction is based on an analytical two-band model and verified by rigorous numerical simulation using multiple-multipole scattering theory. The result suggests an extreme situation where leakage of classical information is unnoticeable to the transmitter and the receiver when such a $\mathcal{PT}$-symmetric unit is inserted into the communication channel.Comment: 16 pages, 8 figure

MINRES-QLP: a Krylov subspace method for indefinite or singular symmetric systems

CG, SYMMLQ, and MINRES are Krylov subspace methods for solving symmetric systems of linear equations. When these methods are applied to an incompatible system (that is, a singular symmetric least-squares problem), CG could break down and SYMMLQ's solution could explode, while MINRES would give a least-squares solution but not necessarily the minimum-length (pseudoinverse) solution. This understanding motivates us to design a MINRES-like algorithm to compute minimum-length solutions to singular symmetric systems. MINRES uses QR factors of the tridiagonal matrix from the Lanczos process (where R is upper-tridiagonal). MINRES-QLP uses a QLP decomposition (where rotations on the right reduce R to lower-tridiagonal form). On ill-conditioned systems (singular or not), MINRES-QLP can give more accurate solutions than MINRES. We derive preconditioned MINRES-QLP, new stopping rules, and better estimates of the solution and residual norms, the matrix norm, and the condition number.Comment: 26 pages, 6 figure

Heavy quarkonium 2S states in light-front quark model

We study the charmonium 2S states $\psi'$ and $\eta_c'$, and the bottomonium 2S states $\Upsilon'$ and $\eta_b'$, using the light-front quark model and the 2S state wave function of harmonic oscillator as the approximation of the 2S quarkonium wave function. The decay constants, transition form factors and masses of these mesons are calculated and compared with experimental data. Predictions of quantities such as Br$(\psi' \to \gamma \eta_c')$ are made. The 2S wave function may help us learn more about the structure of these heavy quarkonia.Comment: 5 latex pages, final version for journal publicatio

On the energy-delay tradeoff and relay positioning of wireless butterfly networks

This paper considers energy-delay tradeoff (EDT) of data transmission in wireless network coded butterfly networks (WNCBNs) where two sources convey their data to two destinations with the assistance of a relay employing either physical-layer network coding (PNC) or analog network coding (ANC). Hybrid automatic repeat request with incremental redundancy (HARQIR) is applied for a reliable communication. Particularly, we first investigate the EDT of both PNC and ANC schemes in WNCBNs to evaluate their energy efficiency. It is found that there is no advantage of using a relay in a high power regime. However, in a low power regime, the PNC scheme is shown to be more energy efficient than both the ANC and direct transmission (DT) schemes if the relay is located far from the sources, while both the PNC and ANC schemes are less energy efficient than the DT scheme when the relay is located near the sources. Additionally, algorithms that optimise relay positioning are developed based on two criteria - minimising total transmission delays and minimising total energy consumption subject to node location and power allocation constraints. This optimisation can be considered as a benchmark for relay positioning in either a low-latency or a low-energy-consumption WNCBN

Pion-photon and photon-pion transition form factors in light-cone formalism

We derive the minimal Fock-state expansions of the pion and the photon wave functions in light-cone formalism, then we calculate the pion-photon and the photon-pion transition form factors of $\gamma ^{\ast}\pi ^{0}\to \gamma$ and $\gamma ^{\ast}\gamma \to \pi ^{0}$ processes by employing these quark-antiquark wave functions of the pion and the photon. We find that our calculation for the $\gamma ^{\ast}\gamma \to \pi ^{0}$ transition form factor agrees with the experimental data at low and moderately high energy scale. Moreover, the physical differences and inherent connections between the transition form factors of $\gamma ^{\ast}\pi ^{0}\to \gamma$ and $\gamma ^{\ast}\gamma \to \pi ^{0}$ have been illustrated, which indicate that these two physical processes are intrinsically related. In addition, we also discuss the $\pi ^{0}\to \gamma \gamma$ form factor and the decay width $\mathit{\Gamma}(\pi \to \gamma \gamma)$ at $Q^{2}=0$.Comment: 20 pages, 2 figure

Composition dependence of electronic structure and optical properties of Hf1-xSixOy gate dielectrics

Copyright © 2008 American Institute of Physics. This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditionsComposition-dependent electronic structure and optical properties of Hf1−xSixOy 0.1 x 0.6 gate dielectrics on Si at 450 °C grown by UV-photo-induced chemical vapor deposition UV-CVD have been investigated via x-ray photoemission spectroscopy and spectroscopy ellipsometry SE . By means of the chemical shifts in the Hf 4f, Si 2p, and O 1s spectra, the Hf–O–Si bondings in the as-deposited films have been confirmed. Analyses of composition-dependent band alignment of Hf1−xSixOy / Si gate stacks have shown that the valence band VB offset Ev demonstrates little change; however, the values of conduction band offset Ec increase with the increase in the silicon atomic composition, resulting from the increase in the separation between oxygen 2p orbital VB state and antibonding d states intermixed of Hf and Si. Analysis by SE, based on the Tauc–Lorentz model, has indicated that decreases in the optical dielectric constant and increase in band gap have been observed as a function of silicon contents. Changes in the complex dielectric functions and band gap Eg related to the silicon concentration in the films are discussed systematically. From the band offset and band gap viewpoint, these results suggest that Hf1−xSixOy films provide sufficient tunneling barriers for electrons and holes, making them promising candidates as alternative gate dielectrics.National Natural Science Foundation of China and Royal Society U.K