《恋爱的犀牛》剧本剧照和剧评

We present results on efficiency and time resolution of a large- resistive plate chamber prototype, equipped with the final ATLAS front-end electronics, at the Gamma Irradiation Facility installed on the CERN X5 beam. (5 refs)

An 8-channels GaAs IC front-end discriminator for RPC particle detectors

A front-end discriminator for application in readout electronics of gas chamber particle detectors, composed of a high-gain pulse amplifier integrated with a threshold comparator and an ECL logic buffer, has been designed. An 8-channels full custom chip has been fabricated in GaAs IC technology. The chip turns out very stable, featuring high voltage gain (>1000), gain-bandwidth product (1011) and sensitivity (~50uV), fast rise time (1.5ns), and only 25mW per channel of power consumption, while providing the ECL dynamic to the output pulses

Multichannels GaAs MMIC front-ends for GAS chamber particle detectors

A front-end circuit composed of a high gain pulse amplifier cascaded by a threshold comparator has been designed for application in readout electronics of particle detectors. A prototype realized with a 8CH full custom chip in GaAs technology by GIGA foundry for application in gas chamber particle detector (RPC) is described. The chip exhibits a 0.2 mV minimum threshold, 150 MHz bandwidth and 50 mW per channel of power consumption

Poly nickel(II)-mu-4,4 '-bipyridine-mu-terephthalato

4,4'-Bipyridine(terephthalato)nickel(II), [Ni(C8H4O4)(C10H8N2)], exists as poly[mu(2)-terephthalato-mu(4)-terephthalato-bis-[(mu(2)-4,4'-bipyridine)nickel(II)]]. Two independent terephthalato groups both occupy positions of 2/m symmetry; one of these groups acts as a mu(4) bridge and coordinates four different Ni atoms, one with each of its O atoms. The other one acts as a mu(2)-bridge and serves as a bidentate chelate for two neighboring metal atoms. The Ni atom lies in a special position of m site symmetry

Reflectance anisotropy spectroscopy: A probe to explore organic epitaxial growth

Reflectance anisotropy spectroscopy (RAS) is demonstrated to be particularly suitable for studying the deposition of organic epitaxial layers in ultrahigh vacuum by organic molecular beam epitaxy, thanks to its high sensitivity and applicability in situ. In the case of alpha-quaterthiophene, both homoepitaxy and heteroepitaxy have been monitored, demonstrating the crystallinity of the films up to tens of monolayers and the epitaxial relation to the substrate. In both cases, optical RAS data are compared to the results of ex situ characterization of the same samples by atomic force microscopy