How Much Does Money Matter in a Direct Democracy?

The fine-structure splitting of quantum confined InxGa1-x Nexcitons is investigated using polarization-sensitive photoluminescence spectroscopy. The majority of the studied emission lines exhibits mutually orthogonal fine-structure components split by 100-340 mu eV, as measured from the cleaved edge of the sample. The exciton and the biexciton reveal identical magnitudes but reversed sign of the energy splitting.Original Publication:Supaluck Amloy, Y T Chen, K F Karlsson, K H Chen, H C Hsu, C L Hsiao, L C Chen and Per-Olof Holtz, Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons, 2011, PHYSICAL REVIEW B, (83), 20, 201307.http://dx.doi.org/10.1103/PhysRevB.83.201307Copyright: American Physical Societyhttp://www.aps.org

An Economy-wide Analysis of Impacts of WTO Tiered Formula for Tariff Reduction on Taiwan

In this study we use Taiwan as a case study to provide an economy-wide analysis of impacts on Taiwan of WTO tariff reduction schemes with different combinations of thresholds and reduction rates. The model we utilized in this study is Taiwan General Equilibrium Model with a WTO module (TAIGEM-WTO, hereafter) that is a multi-sectoral computable general equilibrium (CGE) model of the Taiwan's economy derived from Australian ORANI model (Dixon, Parmenter, Sutton and Vincent, 1982). Simulation results show that results are more sensitive to the scheme of tariff-reduction (i.e., Category 1, 2, and 3) than the tiered levels (i.e., A, B, C, and D) and as a strategy we should pay more attention to the arguments related to the amounts of tariff-reduction. Moreover, changes in nominal average tariff rates are more sensitive and shocks to the economy are more severe when we change the tariff reduction categories rather than the tiered levels. This conclusion also applies to the tiered reduction case when only sensitive products are considered. Finally, simulations with sector's bound rate calculated using arithmetic means have bigger effects than those using import values as weights. Therefore, sector's bound rate using import values as weights would be preferred.Computable General Equilibrium (CGE), Tiered Formula, WTO, International Relations/Trade,

Seebeck Coefficients in Nanoscale Junctions: Effects of Electron-vibration Scattering and Local Heating

We report first-principles calculations of inelastic Seebeck coefficients in an aluminum monatomic junction. We compare the elastic and inelastic Seebeck coefficients with and without local heating. In the low temperature regime, the signature of normal modes in the profiles of the inelastic Seebeck effects is salient. The inelastic Seebeck effects are enhanced by the normal modes, and further magnified by local heating. In the high temperature regime, the inelastic Seebeck effects are weakly suppressed due to the quasi-ballistic transport.Comment: 3 Figure

Surface optical Raman modes in InN nanostructures

Raman spectroscopic investigations are carried out on one-dimensional nanostructures of InN,such as nanowires and nanobelts synthesized by chemical vapor deposition. In addition to the optical phonons allowed by symmetry; A1, E1 and E2(high) modes, two additional Raman peaks are observed around 528 cm-1 and 560 cm-1 for these nanostructures. Calculations for the frequencies of surface optical (SO) phonon modes in InN nanostructures yield values close to those of the new Raman modes. A possible reason for large intensities for SO modes in these nanostructures is also discussed.Comment: 13 pages, 4 figures, Submitted in Journa

Recrystallization of epitaxial GaN under indentation

We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2(high) close to 570 cm-1 in the as-grown epi-GaN is redshifted to stress free value close to 567 cm-1 in the indented region. Evolution of A1(TO) and E1(TO) phonon modes are also reported to signify the recrystallization process.Comment: 10 pages, 3 figures