19,165 research outputs found
How Much Does Money Matter in a Direct Democracy?
The fine-structure splitting of quantum confined InxGa1-x Nexcitons is investigated using polarization-sensitive photoluminescence spectroscopy. The majority of the studied emission lines exhibits mutually orthogonal fine-structure components split by 100-340 mu eV, as measured from the cleaved edge of the sample. The exciton and the biexciton reveal identical magnitudes but reversed sign of the energy splitting.Original Publication:Supaluck Amloy, Y T Chen, K F Karlsson, K H Chen, H C Hsu, C L Hsiao, L C Chen and Per-Olof Holtz, Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons, 2011, PHYSICAL REVIEW B, (83), 20, 201307.http://dx.doi.org/10.1103/PhysRevB.83.201307Copyright: American Physical Societyhttp://www.aps.org
An Economy-wide Analysis of Impacts of WTO Tiered Formula for Tariff Reduction on Taiwan
In this study we use Taiwan as a case study to provide an economy-wide analysis of impacts on Taiwan of WTO tariff reduction schemes with different combinations of thresholds and reduction rates. The model we utilized in this study is Taiwan General Equilibrium Model with a WTO module (TAIGEM-WTO, hereafter) that is a multi-sectoral computable general equilibrium (CGE) model of the Taiwan's economy derived from Australian ORANI model (Dixon, Parmenter, Sutton and Vincent, 1982). Simulation results show that results are more sensitive to the scheme of tariff-reduction (i.e., Category 1, 2, and 3) than the tiered levels (i.e., A, B, C, and D) and as a strategy we should pay more attention to the arguments related to the amounts of tariff-reduction. Moreover, changes in nominal average tariff rates are more sensitive and shocks to the economy are more severe when we change the tariff reduction categories rather than the tiered levels. This conclusion also applies to the tiered reduction case when only sensitive products are considered. Finally, simulations with sector's bound rate calculated using arithmetic means have bigger effects than those using import values as weights. Therefore, sector's bound rate using import values as weights would be preferred.Computable General Equilibrium (CGE), Tiered Formula, WTO, International Relations/Trade,
Seebeck Coefficients in Nanoscale Junctions: Effects of Electron-vibration Scattering and Local Heating
We report first-principles calculations of inelastic Seebeck coefficients in
an aluminum monatomic junction. We compare the elastic and inelastic Seebeck
coefficients with and without local heating. In the low temperature regime, the
signature of normal modes in the profiles of the inelastic Seebeck effects is
salient. The inelastic Seebeck effects are enhanced by the normal modes, and
further magnified by local heating. In the high temperature regime, the
inelastic Seebeck effects are weakly suppressed due to the quasi-ballistic
transport.Comment: 3 Figure
Surface optical Raman modes in InN nanostructures
Raman spectroscopic investigations are carried out on one-dimensional
nanostructures of InN,such as nanowires and nanobelts synthesized by chemical
vapor deposition. In addition to the optical phonons allowed by symmetry; A1,
E1 and E2(high) modes, two additional Raman peaks are observed around 528 cm-1
and 560 cm-1 for these nanostructures. Calculations for the frequencies of
surface optical (SO) phonon modes in InN nanostructures yield values close to
those of the new Raman modes. A possible reason for large intensities for SO
modes in these nanostructures is also discussed.Comment: 13 pages, 4 figures, Submitted in Journa
Recrystallization of epitaxial GaN under indentation
We report recrystallization of epitaxial (epi-) GaN(0001) film under
indentation.Hardness value is measured close to 10 GPa, using a Berkovich
indenter. Pop-in burst in the loading line indicates nucleation of dislocations
setting in plastic motion of lattice atoms under stress field for the
recrystallization process. Micro-Raman studies are used to identify the
recrystallization process. Raman area mapping indicates the crystallized
region. Phonon mode corresponding to E2(high) close to 570 cm-1 in the as-grown
epi-GaN is redshifted to stress free value close to 567 cm-1 in the indented
region. Evolution of A1(TO) and E1(TO) phonon modes are also reported to
signify the recrystallization process.Comment: 10 pages, 3 figures
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