Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique

We describe a technique for measuring thin film stress using wafer curvature that is robust, compact, easy to setup, and sufficiently sensitive to serve as a routine diagnostic of semiconductor epilayer strain in real time during MBE or CVD growth. We demonstrate, using growth of SiGe alloys on Si, that the critical thickness for misfit dislocation can clearly be resolved, and that the subsequent strain relaxation kinetics during growth or post-growth annealing are readily obtained

Monte Carlo simulations of ion-enhanced island coarsening

Monte Carlo simulations of growth and ion bombardment have been performed to explore the atomistic processes that occur during ion-assisted growth. The primary elements of the simulation are (1) creation of surface defects (vacancies and adatoms) by ion bombardment and deposition, (2) thermally activated motion of surface defects and (3) recombination of surface vacancies and adatoms. The authors find that a balance of ion bombardment and deposition (where the creation rate of adatom defects is equal to that of surface vacancies) leads to larger islands and more rapid island coarsening than thermal coarsening with no flux of defects. The presence of the defect flux enhances the breakup of clusters, leading to a broad distribution of island sizes. In comparison, the thermal coarsening leads to a more uniform distribution of islands sizes that increases in size much more slowly. Histograms of the evolution of the island size distribution provide a quantitative measure of the ion-induced increase in the rate of coarsening

Evolution of surface roughness during CVD growth

Monte Carlo simulations of physical and chemical vapor deposition are used to study roughening kinetics of films that grow by nucleation and coalescence of clusters. The effects of interlayer transport, preferential dissociation of molecular precursors and energetic differences between the clusters and the substrate are examined

Atomic Layer Deposition (ALD) to Mitigate Tin Whisker Growth and Corrosion Issues on Printed Circuit Board Assemblies

This paper presents the results of a research program set up to evaluate atomic layer deposition (ALD) conformal coatings as a method of mitigating the growth of tin whiskers from printed circuit board assemblies. The effect of ALD coating process variables on the ability of the coating to mitigate whisker growth were evaluated. Scanning electron microscopy and optical microscopy were used to evaluate both the size and distribution of tin whiskers and the coating/whisker interactions. Results show that the ALD process can achieve significant reductions in whisker growth and thus offers considerable potential as a reworkable whisker mitigation strategy. The effect of ALD layer thickness on whisker formation was also investigated. Studies indicate that thermal exposure during ALD processing may contribute significantly to the observed whisker mitigation

Final report on LDRD Project: In situ determination of composition and strain during MBE

Molecular Beam Epitaxy (MBE) of semiconductor heterostructures for advanced electronic and opto-electronic devices requires precise control of the surface composition and strain. The development of advanced in situ diagnostics for real-time monitoring and process control of strain and composition would enhance the yield, reliability and process flexibility of material grown by MBE and benefit leading-edge programs in microelectronics and photonics. The authors have developed a real-time laser-based technique to measure the evolution of stress in epitaxial films during growth by monitoring the change in the wafer curvature. Research has focused on the evolution of stress during the epitaxial growth of Si{sub x}Ge{sub 1{minus}x} alloys on Si(001) substrates. Initial studies have observed the onset and kinetics of strain relaxation during the growth of heteroepitaxial layers. The technique has also been used to measure the segregation of Ge to the surface during alloy growth with monolayer sensitivity, an order of magnitude better resolution than post-growth characterization. In addition, creation of a 2-dimensional array of parallel beams allows rapid surface profiling of the film stress that can be used to monitor process uniformity

Real time measurement of epilayer strain using a simplified wafer curvature technique

We describe a technique for measuring thin film stress using wafer curvature that is robust, compact, easy to setup, and sufficiently sensitive to serve as a routine diagnostic of semiconductor epilayer strain in real time during MBE or CVD growth. We demonstrate, using growth of SiGe alloys on Si, that the critical thickness for misfit dislocation can clearly be resolved, and that the subsequent strain relaxation kinetics during growth or post-growth annealing are readily obtained

Extensions of the Stoney formula for substrate curvature to configurations with thin substrates or large deformations

Two main assumptions which underlie the Stoney formula relating substrate curvature to mis-match strain in a bonded thin film are that the film is very thin compared to the substrate, and the deformations are infinitesimally small. Expressions for the curvature-strain relastionship are derived for cases in which thses assumptions are relaxed, thereby providing a biasis for interpretation of experimental observations for a broader class of film-substrate configurations

Decay of isolated surface features driven by the Gibbs-Thomson effect in analytic model and simulation

A theory based on the thermodynamic Gibbs-Thomson relation is presented which provides the framework for understanding the time evolution of isolated nanoscale features (i.e., islands and pits) on surfaces. Two limiting cases are predicted, in which either diffusion or interface transfer is the limiting process. These cases correspond to similar regimes considered in previous works addressing the Ostwald ripening of ensembles of features. A third possible limiting case is noted for the special geometry of "stacked" islands. In these limiting cases, isolated features are predicted to decay in size with a power law scaling in time: A is proportional to (t0-t)^n, where A is the area of the feature, t0 is the time at which the feature disappears, and n=2/3 or 1. The constant of proportionality is related to parameters describing both the kinetic and equilibrium properties of the surface. A continuous time Monte Carlo simulation is used to test the application of this theory to generic surfaces with atomic scale features. A new method is described to obtain macroscopic kinetic parameters describing interfaces in such simulations. Simulation and analytic theory are compared directly, using measurements of the simulation to determine the constants of the analytic theory. Agreement between the two is very good over a range of surface parameters, suggesting that the analytic theory properly captures the necessary physics. It is anticipated that the simulation will be useful in modeling complex surface geometries often seen in experiments on physical surfaces, for which application of the analytic model is not straightforward.Comment: RevTeX (with .bbl file), 25 pages, 7 figures from 9 Postscript files embedded using epsf. Submitted to Phys. Rev. B A few minor changes made on 9/24/9

Dynamic Scaling of Ion-Sputtered Surfaces

We derive a stochastic nonlinear equation to describe the evolution and scaling properties of surfaces eroded by ion bombardment. The coefficients appearing in the equation can be calculated explicitly in terms of the physical parameters characterizing the sputtering process. We find that transitions may take place between various scaling behaviors when experimental parameters such as the angle of incidence of the incoming ions or their average penetration depth, are varied.Comment: 13 pages, Revtex, 2 figure