Suppressed Superconductivity of the Surface Conduction Layer in Bi2_2Sr2_2CaCu2_2O8+x_{8+x} Single Crystals Probed by {\it c}-Axis Tunneling Measurements

We fabricated small-size stacks on the surface of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO-2212) single crystals with the bulk transition temperature $T_c$$\simeq$90 K, each containing a few intrinsic Josephson junctions. Below a critical temperature $T_c'$ ($\ll$ $T_c$), we have observed a weakened Josephson coupling between the CuO$_2$ superconducting double layer at the crystal surface and the adjacent one located deeper inside a stack. The quasiparticle branch in the $IV$ data of the weakened Josephson junction (WJJ) fits well to the tunneling characteristics of a d-wave superconductor($'$)/insulator/d-wave superconductor (D$'$ID) junction. Also, the tunneling resistance in the range $T_c'$$<$$T$$<$$T_c$ agrees well with the tunneling in a normal metal/insulator/d-wave superconductor (NID) junction. In spite of the suppressed superconductivity at the surface layer the symmetry of the order parameter appears to remain unaffected.Comment: 13 pages, 6 figure

Ultraviolet photodepletion spectroscopy of dibenzo-18-crown-6-ether complexes with alkali metal cations

Ultraviolet photodepletion spectra of dibenzo-18-crown-6-ether complexes with alkali metal cations (M+-DB18C6, M = Cs, Rb, K, Na, and Li) were obtained in the gas phase using electrospray ionization quadrupole ion-trap reflectron time-of-flight mass spectrometry. The spectra exhibited a few distinct absorption bands in the wavenumber region of 35450−37800 cm^(−1). The lowest-energy band was tentatively assigned to be the origin of the S_0-S_1 transition, and the second band to a vibronic transition arising from the “benzene breathing” mode in conjunction with symmetric or asymmetric stretching vibration of the bonds between the metal cation and the oxygen atoms in DB18C6. The red shifts of the origin bands were observed in the spectra as the size of the metal cation in M^+-DB18C6 increased from Li^+ to Cs^+. We suggested that these red shifts arose mainly from the decrease in the binding energies of larger-sized metal cations to DB18C6 at the electronic ground state. These size effects of the metal cations on the geometric and electronic structures, and the binding properties of the complexes at the S_0 and S_1 states were further elucidated by theoretical calculations using density functional and time-dependent density functional theories

Sub-100-as timing jitter optical pulse trains from mode-locked Er-fiber lasers

We demonstrate sub-100-attosecond timing jitter optical pulse trains generated from free-running, 77.6-MHz repetition-rate, mode-locked Er-fiber lasers. At -0.002(\pm0.001) ps2 net cavity dispersion, the rms timing jitter is 70 as (224 as) integrated from 10 kHz (1 kHz) to 38.8 MHz offset frequency, when measured by a 24-as-resolution balanced optical cross-correlator. To our knowledge, this result corresponds to the lowest rms timing jitter measured from any mode-locked fiber lasers so far. The measured result also agrees fairly well with the Namiki-Haus analytic model of quantum-limited timing jitter in stretched-pulse fiber lasers.Comment: 4 pages, 2 figures, to appear in Optics Letter

Instantaneous ionization rate as a functional derivative

We describe an approach defining instantaneous ionization rate (IIR) as a functional derivative of the total ionization probability. The definition is based on physical quantities which are directly measurable, such as the total ionization probability and the waveform of the pulse. The definition is, therefore, unambiguous and does not suffer from gauge non-invariance. We compute IIR by solving numerically the time-dependent Schrodinger equation for the hydrogen atom in a strong laser field. We find that the IIR lags behind the electric field, but this lag is entirely due to the long tail effect of the Coulomb field. In agreement with the previous results using attoclock methodology, therefore, the IIR we define does not show measurable delay in strong field tunnel ionization

Focused Ion Beam Platinum Nanopatterning for GaN Nanowires: Ohmic Contacts and Patterned Growth

Nanopatterned Pt by Ga+ focused ion beam (FIB) decomposition of an organometallic precursor forms low resistance ohmic contacts on 40–70 nm diameter GaN nanowires (NWs) grown by thermal reaction of Ga2O3 and NH3. With no intentional doping, the wires are presumed to be n-type. Thus, the linear I-V behavior is surprising since evaporated Pt usually forms Schottky barriers on n-GaN. Ohmic behavior was not obtained for 130–140 diameter wires, even with thicker Pt contacts. A second application of FIB Pt nanopatterning was demonstrated by position-selective growth of GaN NWs on Pt catalyst dots. NW locations and density are defined by the position, size, and thickness of the Pt deposit. Combining these techniques provides a versatile platform for nanostructure research and development