A new type of reconstruction on the InSb() surface determined by grazing incidence X-ray diffraction

The (3×3) reconstruction of the InSb( ) surface has been investigated by grazing incidence X-ray diffraction and scanning tunneling microscopy. The structure is characterized by 6-atom rings on top of a slightly buckled InSb top double layer. Two types of rings have been found, an elliptic ring consisting of 4 In and 2 Sb atoms and a trigonal ring with 3 In and 3 Sb atoms. The bond angles and lengths are consistent with the concept of rehybridization and depolarization which explains the reconstructions of the (111) and (110) surfaces

Spéciation chimique et immunotoxicologie du béryllium : effets thérapeutiques des agents complexants NTA, NTP et tiron

Thèse numérisée par la Division de la gestion de documents et des archives de l'Université de Montréal

Proton Heating in Solar Wind Compressible Turbulence with Collisions between Counter-propagating Waves

Magnetohydronamic turbulence is believed to play a crucial role in heating the laboratorial, space, and astrophysical plasmas. However, the precise connection between the turbulent fluctuations and the particle kinetics has not yet been established. Here we present clear evidence of plasma turbulence heating based on diagnosed wave features and proton velocity distributions from solar wind measurements by the Wind spacecraft. For the first time, we can report the simultaneous observation of counter-propagating magnetohydrodynamic waves in the solar wind turbulence. Different from the traditional paradigm with counter-propagating Alfv\'en waves, anti-sunward Alfv\'en waves (AWs) are encountered by sunward slow magnetosonic waves (SMWs) in this new type of solar wind compressible turbulence. The counter-propagating AWs and SWs correspond respectively to the dominant and sub-dominant populations of the imbalanced Els\"asser variables. Nonlinear interactions between the AWs and SMWs are inferred from the non-orthogonality between the possible oscillation direction of one wave and the possible propagation direction of the other. The associated protons are revealed to exhibit bi-directional asymmetric beams in their velocity distributions: sunward beams appearing in short and narrow patterns and anti-sunward broad extended tails. It is suggested that multiple types of wave-particle interactions, i.e., cyclotron and Landau resonances with AWs and SMWs at kinetic scales, are taking place to jointly heat the protons perpendicularly and parallel

Probing the potential landscape inside a two-dimensional electron-gas

We report direct observations of the scattering potentials in a two-dimensional electron-gas using electron-beam diffaction-experiments. The diffracting objects are local density-fluctuations caused by the spatial and charge-state distribution of the donors in the GaAs-(Al,Ga)As heterostructures. The scatterers can be manipulated externally by sample illumination, or by cooling the sample down under depleted conditions.Comment: 4 pages, 4 figure

Dynamic Optimized Bandwidth Management for Teleoperation of Collaborative Robots

A real-time dynamic and optimized bandwidth management algorithm is proposed and used in teleoperated collaborative swarms of robots. This method is effective in complex teleoperation tasks, where several robots rather than one are utilized and where an extensive amount of exchanged information between operators and robots is inevitable. The importance of the proposed algorithm is that it accounts for Interesting Events (IEs) occurring in the system\u27s environment and for the change in the Quality of Collaboration (QoC) of the swarm of robots in order to allocate communication bandwidth in an optimized manner. A general dynamic optimized bandwidth management system for teleoperation of collaborative robots is formulated in this paper. The suggested algorithm is evaluated against two static algorithms applied to a swarm of two humanoid robots. The results demonstrate the advantages of dynamic optimization algorithm in terms of task and network performance. The developed algorithm outperforms two static bandwidth management algorithms, against which it was tested, for all performance parameters in 80% of the performed trials. Accordingly, it was demonstrated that the proposed dynamic bandwidth optimization and allocation algorithm forms the basis of a framework for algorithms applied to real-time highly complex systems

Structure and peculiarities of the (8 x n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: a scanning tunneling microscopy study

A clean Si(001) surface thermally purified in an ultrahigh vacuum molecular-beam epitaxy chamber has been investigated by means of scanning tunneling microscopy. The morphological peculiarities of the Si(001) surface have been explored in detail. The classification of the surface structure elements has been carried out, the dimensions of the elements have been measured, and the relative heights of the surface relief have been determined. A reconstruction of the Si(001) surface prepared in the molecular-beam epitaxy chamber has been found to be (8 x n). A model of the Si(001)-(8 x n) surface structure is proposed.Comment: 4 pages, 8 figures. Complete versio

Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

We discuss a model for the on-site matrix elements of the sp3d5s* tight-binding hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model features on-site, off-diagonal couplings between the s, p and d orbitals, and is able to reproduce the effects of arbitrary strains on the band energies and effective masses in the full Brillouin zone. It introduces only a few additional parameters and is free from any ambiguities that might arise from the definition of the macroscopic strains as a function of the atomic positions. We apply this model to silicon, germanium and their alloys as an illustration. In particular, we make a detailed comparison of tight-binding and ab initio data on strained Si, Ge and SiGe.Comment: Submitted to Phys. Rev.

Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors

Using first-principles electronic structure calculations we identify the anion vacancies in II-VI and chalcopyrite Cu-III-VI2 semiconductors as a class of intrinsic defects that can exhibit metastable behavior. Specifically, we predict persistent electron photoconductivity (n-type PPC) caused by the oxygen vacancy VO in n-ZnO, and persistent hole photoconductivity (p-type PPC) caused by the Se vacancy VSe in p-CuInSe2 and p-CuGaSe2. We find that VSe in the chalcopyrite materials is amphoteric having two "negative-U" like transitions, i.e. a double-donor transition e(2+/0) close to the valence band and a double-acceptor transition e(0/2-) closer to the conduction band. We introduce a classification scheme that distinguishes two types of defects (e.g., donors): type-alpha, which have a defect-localized-state (DLS) in the gap, and type-beta, which have a resonant DLS within the host bands (e.g., conduction band). In the latter case, the introduced carriers (e.g., electrons) relax to the band edge where they can occupy a perturbed-host-state (PHS). Type alpha is non-conducting, whereas type beta is conducting. We identify the neutral anion vacancy as type-alpha and the doubly positively charged vacancy as type-beta. We suggest that illumination changes the charge state of the anion vacancy and leads to a crossover between alpha- and beta-type behavior, resulting in metastability and PPC. In CuInSe2, the metastable behavior of VSe is carried over to the (VSe-VCu) complex, which we identify as the physical origin of PPC observed experimentally. We explain previous puzzling experimental results in ZnO and CuInSe2 in the light of this model.Comment: submitted to Phys. Rev.

Dynamical brittle fractures of nanocrystalline silicon using large-scale electronic structure calculations

A hybrid scheme between large-scale electronic structure calculations is developed and applied to nanocrystalline silicon with more than 10$^5$ atoms. Dynamical fracture processes are simulated under external loads in the [001] direction. We shows that the fracture propagates anisotropically on the (001) plane and reconstructed surfaces appear with asymmetric dimers. Step structures are formed in larger systems, which is understood as the beginning of a crossover between nanoscale and macroscale samples.Comment: 10 pages, 4 figure

Defects in SiO2 as the possible origin of near interface traps in the SiC∕SiO2 system: A systematic theoretical study

A systematic study of the level positions of intrinsic and carbon defects in SiO2 is presented, based on density functional calculations with a hybrid functional in an alpha-quartz supercell. The results are analyzed from the point of view of the near interface traps (NIT), observed in both SiC/SiO2 and Si/SiO2 systems, and assumed to have their origins in the oxide. It is shown that the vacancies and the oxygen interstitial can be excluded as the origin of such NIT, while the silicon interstitial and carbon dimers give rise to gap levels in the energy range inferred from experiments. The properties of these defects are discussed in light of the knowledge about the SiC/SiO2 interface