Surface diffusion of Au on Si(111): A microscopic study

The direct evolution of submonolayer two-dimensional Au phases on the Si(111)-(7x7) surface was studied in real time using the spectroscopic photoemission and low energy electron microscope located at the synchrotron radiation source ELETTRA. A finite area covered by 1 monolayer (ML) of gold with a steplike transition zone was prepared by evaporation in situ. Subsequent annealing resulted in the spread of the Au layer and the formation of laterally extended Si(111)-(5x1)-Au and Si(111)-(√3x √3)R30°-Au surface reconstructions. At a temperature around 970 K, the boundary of the gold-covered region propagates on the clean Si(111)-(7x7) and exhibits a nonlinear dependence on time. The ordered Si(111)-(5x1)-Au plateau develops a separated front moving with constant velocity. Two values of the Au diffusion coefficients were estimated at a temperature of about 985 K: (1) D7x7=5,2x10-8 cm2 s-1 as the average diffusion coefficient for Au on a clean Si(111)-(7x7) surface in the concentration range from 0.4 ML up to 0.66 ML and (2) D5x1=1.2x10-7 cm2 s-1 as the lower limit for the diffusion of single Au atoms on the Si(111)-(5x1)-Au ordered phase

Electronic Structure of Diluted Semimagnetic Semiconductor (Cd,Co)Se

The electronic structure of a new semimagnetic semiconductor (Cd,Co)Se is studied by UPS and calculated by a tight-binding version of the disordered-local-moment theory. The theory accounts for the chemical disorder and for electron interactions within the Co 3d$\text{}^{7}$ shells. Both theory and experiment show Co 3d states deep in the valence band and also at the band edge. The last state seem to be responsible for unique properties of the Co-based semimagnetic semiconductors